G12430_15 [HAMAMATSU]

InGaAs PIN photodiode arrays;


型号：	G12430_15
厂家：	HAMAMATSU CORPORATION
描述：	InGaAs PIN photodiode arrays
文件：	总7页 (文件大小：686K)
中文：	中文翻译
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InGaAs PIN photodiode arrays

G12430 series

16/32/46 element InGaAs array for near IR

detection

The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP (dual inline package). It can be used

to perform simple spectroscopic analysis.

Features

Applications

16, 32, or 46 element array

NIR spectrophotometers

Designed for simple measurement

Large photosensitive area size

Structure

Parameter

G12430-016D

G12430-032D

Room temperature type

G12430-046D

Unit

elements

Cooling

Number of elements

Elements size

Element pitch

Package

0.45 × 1

0.2 × 1

0.25

0.5

18-pin ceramic DIP

40-pin ceramic DIP

Borosilicate glass

48-pin ceramic DIP

Window material

Details of photosensitive area

Number of

elements

Unit

0.45

0.5

0.2

0.25

KIRDC0118EB

Static electricity can damage or degrade the G12430 series. Use caution when handling.

www.hamamatsu.com

InGaAs PIN photodiode arrays

G12430 series

Absolute maximum ratings (Ta=25 °C)

Parameter

Reverse voltage

Symbol

Value

Unit

Operating temperature

Storage temperature

Soldering conditions

Topr

Tstg

-20 to +70*

-20 to +85*

260 °C or less, within 5 s

°C

* No condensation

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Electrical and optical characteristics (Ta=25 °C, per element)

G12430-016D

G12430-032D

G12430-046D

Parameter

Symbol

Condition

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Spectral response

range

0.9 to 1.7

μm

Peak sensitivity wavelength

Photosensitivity

Dark current

λp

1.45

0.85

1.55

0.95

500

1.65

2500

1.45

0.85

1.55

0.95

250

1.65

1250

1.45

0.85

1.55

0.95

250

1.65

1250

μm

A/W

λ=λp

VR=1 V

Dark current temperature

coefﬁcient

ΔTID VR=10 mV

1.1

times/°C

MHz

VR=1 V, RL=50 Ω

Cutoff frequency

λ=1.3 μm, -3 dB

Terminal capacitance

Shunt resistance

Detectivity

VR=1 V, f=1 MHz

100

200

MΩ

cm Hz^1/2/W

Rsh VR=10 mV

D* λ=λp

2 × 10¹²5 × 10¹²

Noise equivalent power NEP λ=λp

1.4 × 10^-143.5 × 10^-14

1 × 10^-142.4 × 10^-14

1 × 10^-142.4 × 10^-14W/Hz^1/2

Spectral response

Spectral transmittance of window material

(Typ. Ta=25 °C)

1.0

100

0.8

0.6

0.4

0.2

0.8

1.0

1.2

1.4

1.6

1.8

0.8

1.0

1.2

1.4

1.6

1.8

Wavelength (μm)

KIRDB0566EA

KIRDB0565EA

InGaAs PIN photodiode arrays

G12430 series

Photosensitivity temperature characteristics

Linearity

(Typ. Ta=25 °C)

(Typ. Ta=25 °C, λ=1.55 ꢀm, light spot size:ϕ50 ꢀm)

VR=0 V

V^R=1 V

100

G12430-032D

/-046D

G12430-016D

-1

0.8

1.0

1.2

1.4

1.6

1.8

Wavelength (μm)

Incident light level (mW)

KIRDB0042EA

KIRDB0567A

Cross-talk characteristics

G12430-016D

G12430-032D/-046D

R=0 V, light spot size: approx. ϕ10 ꢀm)

100 ^{(Typ. Ta=25 °C, λ=1.55 ꢀm, V}

0.1

0.01

-1.0

-0.5

0.5

1.0

-0.5

-0.25

0.25

0.5

Position on photosensitive area (mm)

KIRDB0568EA

KIRDB0569EA

InGaAs PIN photodiode arrays

G12430 series

Dark current vs. reverse voltage

Terminal capacitance vs. reverse voltage

(Typ. Ta=25 °C)

100

1000

100

G12430-016D

G12430-032D/-046D

0.1

0.01

0.1

Reverse voltage (V)

KIRDB0570EA

KIRDB0572EA

Shunt resistance vs. ambient temperature

(Typ.)

100 GΩ

10 GΩ

G12430-032D/-046D

1 GΩ

100 MΩ

10 MΩ

1 MΩ

G12430-016D

-30 -20 -10

10 20 30 40 50 60 70 80

Ambient temperature (°C)

KIRDB0571EA

InGaAs PIN photodiode arrays

G12430 series

Dimensional outlines (unit: mm)

G12430-016D

22.86 0.25

20.7 0.1

1.65 0.2

Window

Photosensitive

surface

Index mark

1 ch

Photosensitive area

Package material: Ceramic

Lead treatment: Ni/Au plating

Lead material: FeNi alloy

1.37 0.2

Reflective index of window material: 1.47

Window thickness: 0.5 0.05

AR coat: None

Window sealing method: Resin sealing

Position accuracy of photosensitive area center:

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

Position accuracy of photosensitive area inclination:

-5°≤θ≤+5°

0.46 0.05

20.32 0.15

2.54 0.15

KIRDA0237EA

G12430-032D

50.8 0.51

22.8 0.35

1.30 0.15

Window

4039

2221

Photosensitive

surface

1920

1 ch Photosensitive area

Index mark

Package material: Ceramic

Lead treatment: Ni/Au plating

Lead material: FeNi alloy

Reflective index of window material: 1.47

Window thickness: 0.75 0.05

AR coat: None

Window sealing method: Resin sealing

Position accuracy of photosensitive area center:

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

Position accuracy of photosensitive area inclination:

-5°≤θ≤+5°

2.54 0.13

0.46 0.05

48.26 0.2

KIRDA0238EA

InGaAs PIN photodiode arrays

G12430 series

G12430-046D

65.0 0.65

22.8 0.35

1.3 0.15

Window

48 47

2625

23 24

Photosensitive

surface

1 2

1 ch

Photosensitive area

Index mark

Package material: Ceramic

Lead treatment: Ni/Au plating

Lead material: FeNi alloy

Reflective index of window material: 1.47

Window thickness: 0.75 0.05

AR coat: None

Window sealing method: Resin sealing

Position accuracy of photosensitive area center:

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

Position accuracy of photosensitive area inclination:

-5°≤θ≤+5°

2.54 0.13

0.46 0.05

58.42 0.2

KIRDA0239EA

Pin connections

Pin no.

G12430-016D G12430-032D G12430-046D

Pin no.

G12430-016D G12430-032D G12430-046D

InGaAs PIN photodiode arrays

G12430 series

Operating circuit

In the most generally used circuit, op ampliﬁers are connected to each channel to read the output in real time. The output of an op am-

pliﬁer is of low impedance and thus can be easily multiplexed.

Photodiode array

Multiplex

KMPDC0001EA

Related information

www.hamamatsu.com/sp/ssd/doc_ja.html

Precautions

Notice

Metal, ceramic, plastic package products / Precautions

Technical information

Infrared detector / Technical information

Information described in this material is current as of March, 2014.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KIRD1124E02 Mar. 2014 DN

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