R4330-02 [HAMAMATSU]
PHOTOMULTlPLlER TUBES; PHOTOMULTlPLlER钢管
| 型号： | R4330-02 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | PHOTOMULTlPLlER TUBES |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOMULTlPLlER TUBES
R3310-02, R4330-02
InGaAs (Cs) Photocathode, Wide Spectral Response, 51mm (2") Dia., Head-on Type
For Photon Counting : Low Dark Counts, Excellent P.H.D.
APPLICATIONS
Raman Spectroscopy
Fluorescent Spectroscopy
Astrophysical Measurement
Laser Detection
FEATURES
Wide Spectral Response
R3310-02 ........................................... 300 to 1040nm
R4330-02 ............................................160 to 1040nm
High Quantum Efficiency in IR ...........
Fast Rise Time ......................................
Excellent Single Photoelectron
Pulse Height Distribution
0.25% at 1 m
3.0ns at 1500V
........................... Peak to Valley Ratio 2.3 (at –20
Low Dark Counts ....................... 30cps Typ. (at –20
)
)
Hamamatsu R3310-02 and R4330-02 are 51mm (2") diameter head-on type photomultiplier tubes having InGaAs (Cs) photocath-
odes, and linear focused CuBeO dynodes. The InGaAs (Cs) photocathode allows high sensitivity over a wide spectral range up to
1040nm.
The R3310-02 and the R4330-02 are selected for photon counting, and they feature low dark counts and excellent pulse height
distribution (PHD) of single photoelectrons.
Figure 1: Typical Spectral Response
GENERAL
TPMHB0051EA
Parameter
Description/Value Unit
102
101
100
Spectral Response
R4330-02
R3310-02
CATHODE
RADIANT
SENSITIVITY
R3310-02
R4330-02
300 to 1040
160 to 1040
nm
nm
Wavelength of Maximum Response
400
nm
Photocathode
MateriaI
InGaAs(Cs)
R4330-02
R3310-02
Minimum Effective Area
Mode
10 10
Opaque
mm
Window Material
R3310-02
Borosilicate glass (K-free)
Synthetic silica glass
R4330-02
QUANTUM
EFFICIENCY
Dynode
Cu-BeO
Linear Focused
10
Secondary Emitting Surface
Structure
Number of Stages
10–1
Direct Interelectrode Capacitances
Anode to Last Dynode
Approx. 2
Approx. 3
pF
pF
Anode to All Other Electrodes
21-pin Base
Base
10–2
100
E678–21C (Supplied)
E678–21D (Option)
SuitabIe Socket
700
1100
300
500
900
g
g
R3310-02
110
93
WAVELENGTH (nm)
Weight
R4330-02
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein.
1997 Hamamatsu Photonics K.K.
©
PHOTOMULTlPLlER TUBES R3310-02, R4330-02
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
2200
250
Vdc
Vdc
A
Average Anode Current
1
A
cps
pA
B
Average Pulse Count Rate
6
106
10
–80 to +50
C
Average Cathode Current
D
Ambient Temperature
CHARACTERISTlCS (at 25 )
Unit
Parameter
Min.
Typ.
Max.
E
Cathode Sensitivity
Quantum Efficiency
at 253.7nm (Hg-Line) R4330 Series
at 1000nm
15
%
%
0.25
0.13
80
F
Luminous
150
30
A/lm
Radiant at 253.7nm (Hg-Line) R4330 Series
mA/W
mA/W
mA/W
mA/W
at 852.1nm (Cs-Line)
at 900nm
9.4
8.1
2
at 1000nm
1.1
15
G
Red/White Ratio
0.4
H
Anode Sensitivity
F
Luminous
50
A/lm
A/W
A/W
A/W
A/W
Radiant at 253.7nm (Hg-Line) R4330 Series
1.0 104
3.1 103
at 852.1nm (Cs-Line)
at 900nm
2.7 103
6.6 102
at 1000nm
3.3 105
5
H
Gain
J
Equivalent Anode Dark Current
20
nA
K
Anode Dark Current
30
150
cps
Single Photoelectron PHD (Peak to Valley Ratio)
2.3
H
Time Response
L
Anode Pulse Rise Time
3.0
23
ns
ns
M
Electron Transit Time
NOTES
A
B
Averaged over any interval of 30 seconds maximum.
bution ratio shown in Table 1 after one hour storage in the cooler set at –20
The discriminator is set at 1/3 of a single photoelectron level.
The rise time is the time it takes the output pulse to rise from 10% to 90% of the
peak amplitude when the entire photocathode is illuminated by a delta function
light pulse.
The electron transit time is the interval between the arrival of a delta function
light pulse at the entrance window of the tube and the time when the output
pulse reaches the peak amplitude. In measurement the entire photocathode is
illuminated.
.
Measured at single photoelectron level. The discriminator level is set at valley
point.
L
C
D
In practical operation, the cathode current should be lower than 2pA to pre-
vent shortening the life of the photocathode.
For cooling operation, another ceramic socket, type number E678-21D is rec-
ommended, because the teflon socket type number E678-21C supplied with the
tube is not suitable for cooling operation due to its high thermal expansion coef-
ficient. Alternatively, it is recommended to solder a resistor, capacitor, etc. di-
rectly on stem pins using a socket contact (100-2520S) supplied by Winchester.
Supply voltage is 150 volts between the cathode and all other electrodes.
The light source is a tungsten filament lamp operated at a distribution tempera-
ture of 2856K.
M
E
F
Warning–Personal Safety Hazards
G
The quotient of the cathode sensitivity measured with the light source is the
Electrical Shock
applied to this device present a shock hazard.
Operating voltages
E
same as Note
passing through a red filter (Toshiba R-68) divided by the
cathode luminous sensitivity without the red filter.
H
J
Measured with supply voltage and voltage distribution ratio in Table 1.
Measured with supply voltage to provide the anode luminous sensitivity of 40
(A/lm) and the voltage distribution ratio in Table 1 after 30 minutes storage in the
darkness.
Table 1:Voltage Distribution Ratio
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
1.5 1
P
3
1
1
1
1
1
1
1
1
Distribution Ratio
K
Measured with supply voltage that gives 2 106 gain and with the voltage distri-
SuppIy Voltage : 1500Vdc, K : Cathode, Dy : Dynode, P : Anode
Figure 2: Typical Single Photoelectron
Pulse Height Distribution
Figure 3: Typical Gain
TPMHB0280EA
TPMHB0044EA
108
1.0
WAVELENGTH OF INCIDENT LIGHT : 800 (nm)
LOWER LEVEL DISCRI.
SIGNAL+DARK COUNTS
DARK COUNTS
: 87 (CH)
: 5526 (cps)
: 30 (cps)
107
106
105
104
103
0.8
TEMPERATURE
: –20 (
)
0.6
0.4
0.2
0
SIGNAL+DARK
DARK
102
500
1000
1500
2000
2500
0
512
1024
CHANNEL NUMBER (CH)
SUPPLY VOLTAGE (V)
Figure 4: Typical Time Response
Figure 5: Typical Temperature Coefficient of Quantum Efficiency
TPMHB0045EA
TPMHB0046EB
2
102
TEMPERATURE RANGE: –10 to +40 (
)
1.5
1
0.5
0
TRANSIT TIME
101
–0.5
–1
–1.5
–2
RISE TIME
100
500
300
400
500
600
700
800
900 1000
1000
1500
2000
3000
WAVELENGTH (nm)
SUPPLY VOLTAGE (Vdc)
Figure 6: Typical Dark Counts vs. Temperature
TPMHB0047EA
COOLING
105
As Figure 6 shows, the dark counts of the R3310-02 and
R4330-02 decreases by cooling the tube. Therefore, when
performing photon counting, it is recommended that the tube be
cooled down to about –20 . The cooler C2761 which features
temperature control from –30 to 0 is available from
HAMAMATSU.
104
103
102
101
100
–40
–30
–20
–10
0
10
20
TEMPERATURE (
)
PHOTOMULTlPLlER TUBES R3310-02, R4330-02
Figure 7: Dimensional Outline and Basing Diagram (Unit : mm)
a) TUBE
Orientation of Photocathode
with Respect to Base pin
b) PHOTOCATHODE
X Axis Cross Section
22.0
INPUT WINDOW
Top View
15
51
X
1
PIN 3
PIN 1
Y
PHOTOCATHODE
(10 10)
90° 2.5°
10
PIN 14
PHOTOCATHODE
3.4
6.6
PHOTOCATHODE
CENTER
1.6
Bottom View
Y Axis Cross Section
IC
11
DY9
DY7
DY5
IC
PHOTOCATHODE CENTER
INPUT WINDOW
IC
8
22.0
1.6
10
12
IC
13
14
15
9
P
DY3
DY1
IC
7
11.5
DY10
16
17
18
6
DY8
DY6
5
4
PHOTOCATHODE
HA-COATING
IC
19
3
20
2
DY4
DY2
IC
21
IC
1
IC
(Conductive
K
paint connected
to the cathode)
15° 1°
SHORT PIN
Dy : Dynode
LIGHT SHIELD
(SILICONE)
K
P
: Photocathode
: Anode
PHOTOCATHODE
IC : Internal Connection
(should not be used)
TUBE CENTER
TPMHA0023EB
TPMHA0022EB
TPMHA0286EA
D
c) SOCKET(Refer to NOTES
)
E678–21C (SUPPLIED)
E678–21D (OPTION)
51
44.5
23.5
19
R5
TACCA0054EB
TACCA0066EC
REMARKS
CAUTIONS
HA coating
Use the HAMAMATSU SOCKET E678-21C or E678-21D.
When soldering the voltage dividers to the socket, the PMT should be in-
serted in the socket.
The R3310-02 and R4330-02 are coated with the conductive paint con-
nected to the cathode, which is covered with an insulating material (HA coat-
ing). This method decreases noise. Care should be taken not to damage the
insulating cover wrapping around the bulb.
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
TPMH1021E04
SEP. 1997
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
相关型号：
R4330E3
Rectifier Diode, 1 Phase, 1 Element, 150A, 300V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1 PIN
MICROSEMI
R4330TS
Rectifier Diode, 1 Phase, 1 Element, 150A, 300V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1 PIN
MICROSEMI
R4330TSE3
Rectifier Diode, 1 Phase, 1 Element, 150A, 300V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明