S10783 [HAMAMATSU]

PIN Photodiode, PLASTIC PACKAGE-4;


型号：	S10783
厂家：	HAMAMATSU CORPORATION
描述：	PIN Photodiode, PLASTIC PACKAGE-4 光电
文件：	总6页 (文件大小：146K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Si PIN photodiodes

S10783

S10784

High-speed detectors with plastic package

The S10783 and S10784 are high-speed APC (auto power control) detectors developed for monitoring laser diodes with a

peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with

φ3 mm lens.

Features

Applications

High-speed response

300 MHz typ. (λ=650 nm, VR=2.5 V)

250 MHz typ. (λ=780 nm, VR=2.5 V)

Laser diode monitors of optical disk unit (high-speed APC)

Sensors for red laser diode

High sensitivity

S10783: 0.46 A/W typ. (λ=650 nm)

S10784: 0.45 A/W typ. (λ=650 nm)

Structure

Parameter

Photosensitive area size

Effective photosensitive area

Package

Symbol

S10783

φ0.8

0.5

S10784

φ3.0

7.0

Unit

mm²

Surface mount type plastic

Plastic with lens

Absolute maximum ratings

Parameter

Reverse voltage

Power dissipation

Operating temperature

Storage temperature

Symbol

VR max

Topr

Tstg

S10783

S10784

Unit

°C

-25 to +85

-40 to +100

°C

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

This product does not support lead-free soldering. For details on reﬂow soldering conditions for surface-mount conponents, please

contact our sales ofﬁce.

www.hamamatsu.com

Si PIN photodiodes

S10783, S10784

Electrical and optical characteristics (Ta=25 °C)

S10783

S10784

Typ.

340 to 1040

760

Parameter

Symbol

Condition

Unit

Min.

Typ.

330 to 1040

760

Max.

Min.

Max.

Spectral response range

Peak sensitivity wavelength

λp

0.41

0.47

1.0

0.40

0.46

1.0

λ=660 nm

λ=780 nm

VR=2.5 V

0.46

0.52

0.01

1.15

0.45

0.51

0.01

1.15

Photosensitivity

A/W

Dark current

Temperature coefﬁcient of ID

times/°C

TCID

λ=660 nm

λ=780 nm

VR=2.5 V, f=1 MHz

VR=2.5 V

150

125

300

250

4.5

3.5 × 10^-15

150

125

300

250

4.5

3.5 × 10^-15

VR=2.5 V

RL=50 Ω

Cutoff frequency

MHz

Terminal capacitance

Noise equivalent power

NEP

W/Hz^1/2

Spectral response

Linearity

(Typ. Ta=25 °C)

S10783

(Typ. Ta=25 °C, VR=0 V, 2856 K)

0.6

1 mA

100 μA

10 μA

1 μA

0.5

0.4

0.3

0.2

S10784

100 nA

10 nA

1 nA

S10783

0.1

100 pA

10 pA

0.01

200

400

600

800

1000

1200

0.1

100

1000 10000

Wavelength (nm)

Illuminance (lx)

KPINB0355EA

KPINB0396EA

Si PIN photodiodes

S10783, S10784

Dark current vs. reverse voltage

Photosensitivity temperature characteristics

(Typ. Ta=25 °C)

(Typ.)

1 nA

100 pA

10 pA

+1.0

+0.5

1 pA

100 fA

-0.5

0.01

0.1

100

400

500

600

700

800

900 1000 1100

Reverse voltage (V)

Wavelength (nm)

KPINB0356EA

KPINB0357EA

Dark current vs. ambient temperature

Terminal capacitance vs. reverse voltage

(Typ. VR=2.5 V)

(Typ. Ta=25 °C, f=1 MHz)

10 pF

10^-7

10^-8

10^-9

10^-10

10^-11

10^-12

10^-13

10^-14

10^-15

10^-16

1 pF

-20 -10

10 20 30 40 50 60 70 80

0.1

100

Ambient temperature (°C)

Reverse voltage (V)

KPINB0363EA

KPINB0358EA

Si PIN photodiodes

S10783, S10784

Directivity

S10784

S10783

(Typ. Ta=25 °C)

20° 30°

(Typ. Ta=25 °C)

10° 20°

30°

20°

10°

0°

10°

20°

10°

0°

100%

30°

80%

60%

80%

60%

40°

50°

40°

50°

40°

50°

40°

50°

40%

20%

40%

20%

60°

70°

60°

70°

60°

70°

60°

70°

80°

90°

80°

90°

80°

90°

80°

90°

Relative sensitivity

KPINB0359EA

KPINB0362EA

Frequency characteristics

λ=780 nm

λ=660 nm

(Typ. Ta=25 °C, VR=2.5 V, RL=50 Ω)

-3

-5

-3

-5

-10

100 kHz

-10

100 kHz

1 MHz

10 MHz

100 MHz

1 GHz

1 MHz

10 MHz

100 MHz

1 GHz

Frequency

KPINB0360EA

KPINB0361EA

Si PIN photodiodes

S10783, S10784

Dimensional outlines (unit: mm)

S10783

Photosensitive area ( 0.8)

4.1 0.2

(Including burr)

1.5 0.4

0.7 0.3

0.4

0.8

1.5 0.4

0.7 0.3

4.0*

1.8

7.0 0.3

10°

Photosensitive

surface

Cathode

Anode

Cathode

Tolerance unless otherwise noted: 0.1

Position accuracy of photosensitive area center

with respect to the package dimensions marked *

X, Y≤ 0.2

5°

θ≤ 2°

Lead surface finish: silver plating

Standard packing: stick (50 pcs/stick)

KPINA0105EB

S10784

6°

8°

4.0 0.2

4.2 max.

2.2 0.15

0.7

(Including burr)

Center of lens

Lens 3.0

3.8*

1.2

Tolerance unless otherwise noted: 0.1

Position accuracy of photosensitive area center

0.45

with respect to the package dimensions marked *

X, Y≤ 0.2

θ≤ 2°

0.45

2.54

Lead surface finish: silver plating

Standard packing: polyethylene pack [anti-static type]

(500 pcs/pack)

KPINA0032EC

Si PIN photodiodes

S10783, S10784

Information described in this material is current as of May, 2013.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KPIN1079E03 May 2013 DN

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