S1227-1010BQ [HAMAMATSU]
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity; 硅光电二极管紫外到可见光，精密测光;抑制红外线灵敏度
| 型号： | S1227-1010BQ |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| 文件： | 总4页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si photodiode
S1227 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
Applications
High UV sensitivity: QE 75 % (λ=200 nm)
Suppressed IR sensitivity
Low dark current
Analytical equipment
Optical measurement equipment, etc.
ꢀ General ratings / Absolute maximum ratings
Absolute maximum ratings
Dimensional
Active
area size
Effective
active area
Reverse
voltage
VR Max.
(V)
Operating
temperature
Topr
Storage
temperature
Tstg
Package
outline/
Window
material *
Type No.
(mm)
(mm)
(mm2)
5.9
(°C)
(°C)
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
ꢀ/Q
ꢀ/R
ꢀ/Q
ꢀ/R
ꢀ/Q
ꢀ/R
ꢀ/Q
ꢀ/R
2.7 × 15
1.1 × 5.9
6 × 7.6
8.9 × 10.1
15 × 16.5
2.4 × 2.4
5.8 × 5.8
10 × 10
5.7
33
5
-20 to +60
-20 to +80
100
ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Short circuit
current
Isc
Photo sensitivity
Rise
time
tr
VR=0 V
L
R =1 kΩ
Dark
current Temp.
Terminal
Shunt
Spectral Peak
capacitance
resistance
S
(A/W)
sensitivity
wavelength
response
range
λ
coefficient
TCID
I
D
Ct
VR=0 V
f=10 kHz
NEP
Rsh
V =10 mV
R
100 lx
Type No.
R
V =10 mV
λp
He-Ne
Laser
Max.
200 nm
Min. Typ.
λp
(GΩ)
Min. Typ.
(nm)
(nm)
Min. Typ. 633 nm (µA) (µA) (pA)
(µs)
(pF)
170
(W/Hz1/2)
2.5 × 10-15
2.1 × 10-15
2.5 × 10-15
2.1 × 10-15
5.0 × 10-15
4.2 × 10-15
8.0 × 10-15
6.7 × 10-15
(times/° C)
190 to 1000
320 to 1000
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
0.36 0.10 0.12 0.34
0.43 0.39 2.2 3.7
0.36 0.10 0.12 0.34 3.0
0.43 0.39 2.2 3.7
0.36 0.10 0.12 0.34
0.43 0.39
0.36 0.10 0.12 0.34
0.43 0.39
2
3.2
5
5
0.5
2
2
20
20
5
-
-
190 to 1000
320 to 1000
190 to 1000
320 to 1000
190 to 1000
320 to 1000
2
0.5
2
160
950
-
-
720
1.12
11
13
32
36
16
19
44
53
20
50
0.5
-
-
7
3000 0.2
2
-
-
* Window material Q: quartz glass, R: resin coating
1
Si photodiode S1227 series
ꢀꢀSpectral response
ꢀꢀPhoto sensitivity temperature characteristic
(Typ. )
(Typ. Ta=25 ˚C)
+1.5
0.7
0.6
0.5
0.4
+1.0
+0.5
S1227-BR
0.3
0.2
S1227-BQ
S1227-BQ
0
0.1
0
S1227-BR
400
-0.5
190
400
600
800
1000
190
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KSPDB0094EA
KSPDB0030EB
ꢀ Rise time vs. load resistance
ꢀ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, VR=0 V)
(Typ. Ta=25 ˚C)
1 ms
100 µs
10 µs
1 µs
1 nA
100 pA
10 pA
1 pA
S1227-1010BQ/BR
S1227-66BQ/BR
S1227-1010BQ/BR
S1227-66BQ/BR
100 ns
S1227-33BQ/BR
S1227-16BQ/BR
S1227-16BQ/BR, -33BQ/BR
103 104
100 fA
10 ns
102
105
0.01
0.1
1
10
REVERSE VOLTAGE (V)
LOAD RESISTANCE (Ω)
KSPDB0096EB
KSPDB0095EA
ꢀ Shunt resistance vs. ambient temperature
(Typ. VR=10 mV)
1 TΩ
100 GΩ
10 GΩ
1 GΩ
S1227-33BQ/BR
S1227-16BQ/BR
S1227-1010BQ/BR
100 MΩ
10 MΩ
1 MΩ
S1227-66BQ/BR
100 kΩ
10 kΩ
-20
0
20
40
60
80
AMBIENT TEMPERATURE (˚C)
KSPDB0097EA
2
Si photodiode S1227 series
ꢀꢀDimensional outlines (unit: mm)
ꢀ S1227-16BQ
ꢀ S1227-16BR
HOLE
HOLE
(2 ×) 0.8
(2 ×) 0.8
ACTIVE AREA
ACTIVE AREA
15 ± 0.15
13.5 ± 0.13
12.2
15 ± 0.15
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
13.5 ± 0.13
0.5
LEAD
ANODE MARK
0.5
LEAD
ANODE MARK
8.5 ± 0.2
8.5 ± 0.2
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0094EA
KSPDA0095EA
ꢀ S1227-33BQ
ꢀ S1227-33BR
7.6 ± 0.1
7.6 ± 0.1
ACTIVE AREA
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.5
LEAD
0.5
LEAD
6.6 ± 0.3
6.6 ± 0.3
4.5 ± 0.2
ANODE
TERMINAL MARK
4.5 ± 0.2
ANODE
TERMINAL MARK
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0096EA
KSPDA0097EA
3
Si photodiode S1227 series
ꢀ S1227-66BQ
ꢀ S1227-66BR
10.1 ± 0.1
10.1 ± 0.1
ACTIVE AREA
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.5
LEAD
0.5
LEAD
9.2 ± 0.3
7.4 ± 0.2
9.2 ± 0.3
7.4 ± 0.2
ANODE
ANODE
TERMINAL MARK
TERMINAL MARK
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0098EA
KSPDA0099EA
ꢀ S1227-1010BQ
ꢀ S1227-1010BR
16.5 ± 0.2
16.5 ± 0.2
ACTIVE AREA
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.5
LEAD
0.5
LEAD
15.1 ± 0.3
12.5 ± 0.2
15.1 ± 0.3
12.5 ± 0.2
ANODE
TERMINAL MARK
ANODE
TERMINAL MARK
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0101EA
KSPDA0100EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1036E04
Aug. 2004 DN
4
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