S2386 [HAMAMATSU]
Si photodiode For visible to IR, general-purpose photometry; 硅光电二极管对于不可见的红外光谱，通用测光
| 型号： | S2386 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si photodiode For visible to IR, general-purpose photometry |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si photodiode
S2386 series
For visible to IR, general-purpose photometry
Features
Applications
High sensitivity
Low dark current
High reliability
High linearity
Analytical equipment
Optical measurement equipment
ꢀ General ratings / Absolute maximum ratings
Absolute maximum ratings
Dimensional
Active
area size
Effective
active area
Reverse
voltage
VR Max.
(V)
Operating
temperature
Topr
Storage
temperature
Tstg
Package
outline/
Window
material *
Type No.
(mm)
(mm)
(mm2)
1.2
(°C)
(°C)
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
ꢀ/K
ꢀ/L
TO-18
1.1 × 1.1
2.4 × 2.4
3.6 × 3.6
3.9 × 4.6
5.8 × 5.8
5.7
13
17.9
33
ꢀ/K
30
-40 to +100
-55 to +125
TO-5
TO-8
ꢀ/K
ꢀ/K
ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Dark
current
Terminal
Spectral Peak
Photo sensitivity
Rise time
Temp.
Short circuit
current
Isc
Shunt
capacitance
Ct
NEP
VR=0 V
λ=λp
sensitivity
coefficient
resistance
response
range
S
(A/W)
tr
ID
wavelength
VR=0 V
L=1 k
Ω
of ID
TCID
Rsh
VR =10 mV
VR=0 V
f=10 kHz
Type No.
V
R
=10 mV
100 lx
λ
λp
R
He-Ne GaAs
Max.
GaP
LED
laser
LE D
Min. Typ.
λp
Min. Typ.
(nm)
(nm)
(µA) (µA) (pA)
(µs)
0.4
(pF)
140
730
(W/Hz1/2)
560 nm 633 nm 930 nm
(times/° C)
(G
)
(G
)
Ω
Ω
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
1
4
1.3
5.7
2
5 100 6.8 × 10-16
4.4 6.0
9.6 12
5
1.8
3.6
5.5
10
2
50 9.6 × 10-16
25 1.4 × 10-15
320 to 1100
960 0.6 0.38 0.43 0.59
1.12
20
30
50
1600 0.5
2300 0.3
12
26
17
33
4300 0.2 10 2.1 × 10-15
* Window material K: borosilicate glass, L: lens type borosilicate glass
1
Si photodiode S2386 series
ꢀꢀSpectral response
ꢀꢀPhoto sensitivity temperature characteristic
(Typ. Ta=25 ˚C)
(Typ.)
0.7
0.6
0.5
0.4
0.3
0.2
+1.5
+1.0
+0.5
0
0.1
0
-0.5
200
400
600
800
1000
200
400
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KSPDB0058EB
KSPDB0110EA
ꢀꢀDirectivity
ꢀꢀRise time vs. load resistance
20˚
10˚
0˚
10˚
20˚
(Typ. Ta=25 ˚C, VR=0 V)
1 ms
100 %
30˚
30˚
100 µs
80 %
60 %
S2386-8K
S2386-45K
10 µs
40˚
50˚
40˚
50˚
S2386-18L
S2386-18K
1 µs
40 %
20%
S2386-5K
60˚
70˚
60˚
70˚
100 ns
10 ns
S2386-18K
S2386-44K
103
80˚
90˚
80˚
90˚
102
104
105
RELATIVE SENSITIVITY
LOAD RESISTANCE (Ω)
KSPDB0111EA
KSPDB0112EA
2
Si photodiode S2386 series
ꢀ Dark current vs. reverse voltage
ꢀ Shunt resistance vs. ambient temperature
(Typ. Ta=25 ˚C)
(Typ. VR=10 mV)
1 nA
10 TΩ
S2386-5K
1 TΩ
100 GΩ
10 GΩ
1 GΩ
S2386-18K/-18L
S2386-45K
S2386-8K
100 pA
10 pA
1 pA
S2386-44K
100 MΩ
10 MΩ
1 MΩ
100 fA
10 fA
S2386-18K/-5K/-44K/-45K
100 kΩ
0.01
0.1
1
10
100
-20
0
20
40
60
80
REVERSE VOLTAGE (V)
AMBIENT TEMPERATURE (˚C)
KSPDB0114EA
KSPDB0113EB
ꢀꢀDimensional outlines (unit: mm)
ꢀ S2386-18K
ꢀ S2386-18L
5.4 ± 0.2
5.4 ± 0.2
4.7 ± 0.1
WINDOW
3.0 ± 0.2
4.7 ± 0.1
0.45
LEAD
0.45
LEAD
2.54 ± 0.2
2.54 ± 0.2
CONNECTED TO CASE
CONNECTED TO CASE
KSPDA0102EB
KSPDA0048EBy
3
Si photodiode S2386 series
ꢀ S2386-5K/-44K
ꢀ S2386-45K
9.1 ± 0.2
8.1 ± 0.1
9.1 ± 0.2
8.1 ± 0.1
WINDOW
5.9 ± 0.1
WINDOW
5.9 ± 0.1
Y
PHOTOSENSITIVE
SURFACE
X
0.45
LEAD
ACTIVE AREA
0.4
5.08 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
CONNECTED TO CASE
5.08 ± 0.2
KSPDA0103EA
CHIP CENTER TO CAP CENTER
-0.7≤X≤-0.1
-0.3≤Y≤+0.3
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
CONNECTED TO CASE
ꢀ S2386-8K
KSPDA0178EA
13.9 ± 0.2
12.35 ± 0.1
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
7.5 ± 0.2
MARK ( 1.4)
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
CONNECTED TO CASE
KSPDA0104EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1035E03
Aug. 2006 DN
4
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