S4114-46Q [HAMAMATSU]
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR; 硅光电二极管阵列16 ， 35 ， 46元硅光电二极管阵列紫外到近红外
| 型号： | S4114-46Q |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR |
| 文件： | 总4页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si photodiode array
S4111/S4114 series
16, 35, 46 element Si photodiode array for UV to NIR
S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily
developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity.
Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window.
Features
Applications
Large active area
Low cross-talk
Multichannel spectrophotometers
Color analyzers
Wide spectral response range
High UV sensitivity
Light spectrum analyzers
Light position detection
Wide linearity
S4111 series: Enhanced infrared sensitivity,
low dark current
S4114 series: Low terminal capacitance,
high-speed response
ꢀ General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
(per 1 element)
Between Between
elements elements
Dimensional
outline/
Window
Nu mber
of
elements
Reverse
voltage
VR Max.
Operating
temperature temperature
Storage
Package
Type No.
Effective
area
measure
pitch
Size
Topr
(°C)
Tstg
(°C)
m aterial *
(mm)
(mm)
(mm2) (mm) (mm)
1.305
(V)
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
ꢀ/Q
ꢀ/R
ꢀ/Q
ꢀ/Q
ꢀ/Q
ꢀ/Q
1.45 × 0.9
18 pin DIP
16
40 pin DIP
48 pin DIP
40 pin DIP
48 pin DIP
35
46
35
46
0.1
1.0
15
-20 to +60
-20 to +80
4.4 × 0.9 3.96
ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)
Spectral
response sensitivity
range
λ
Peak
Photo sensitivity
S
Rise time
tr
Shunt
resistance
Rsh
Dark current
Terminal
capacitance
Ct
NEP
ID
Max.
wavelength
RL=1 kΩ
λ=655 nm
λ=λp
200 nm 633 nm
Type No.
λp
VR=10 mV
Min Typ.
(pF) (pF) (µs) (µs)
(GΩ) (GΩ)
λp
V
R
=10 mV
V
R
=10 V
V
R
=0 V
V
R
=10 V
V
R
=0 V
V
R
=10 V
V
(W/Hz
R
=0 V
V
R
=10
V
)
1/2
1/2
)
(W/Hz
(nm)
(nm) (A/W) (A/W) (A/W) (pA)
(pA)
190 to 1100
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
0.08 0.43
4.4 × 10-16 1.7 × 10-15
1.3 × 10-15 3.1 × 10-15
5.7 × 10-15 8.0 × 10-15
5
25
2.0 250 200
50
120
20
0.5
1.2
0.1
0.1
0.3
320 to 1100
-
0.39
960
0.58
190 to 1100
10
60
50
1.0 30
550
35
0.08 0.43
190 to 1000
800
0.50
300 0.15
2
0.05
* Window material R: resin coating, Q: quartz glass
1
Si photodiode array S4111/S4114 series
ꢀꢀSpectral response
ꢀꢀPhoto sensitivity temperature characteristics
(Typ. Ta=25 ˚C)
(Typ. )
+1.4
0.8
0.7
0.6
+1.2
S4111-16Q/-35Q/-46Q
S4111 SERIES
+1.0
S4111-16R
0.5
+0.8
S4114 SERIES
+0.6
0.4
0.3
0.2
+0.4
+0.2
S4114 SERIES
0
0.1
0
-0.2
190
190
400
600
800
1000
1200
600
800
1000 1100
400
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0113EA
KMPDB0112EA
ꢀꢀDark current vs. reverse voltage
ꢀꢀTerminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100 pA
10 pA
1 pA
1 nF
S4114-35Q/-46Q
S4111-35Q/-46Q
S4111-35Q/-46Q
100 pF
S4111-16Q/-16R
S4111-16Q/-16R
100 fA
10 fA
S4114-35Q/-46Q
10 pF
0.1
0.01
0.1
1
10
100
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KMPDB0114EA
KMPDB0115EA
ꢀꢀExample of cross-talk
S4111 series
S4114 series
(Ta=25 ˚C, =655 mm, VR=0 V)
(Ta=25 ˚C, =655 mm, VR=0 V)
100
100
10
1
10
1
0.1
0.1
LIGHT POSITION ON ACTIVE AREA (500 m/div.)
LIGHT POSITION ON ACTIVE AREA (500 m/div.)
KMPDB018EB
KMPDB0015EA
2
Si photodiode array S4111/S4114 series
ꢀꢀDimensional outlines (unit: mm)
ꢀꢀS4111-16Q
ꢀꢀS4111-16R
22.86 ± 0.3
22.86 ± 0.3
18.8
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
18.8
ACTIVE AREA
0.5 ± 0.2
CH 1
CH 16
ACTIVE AREA
CH 1
CH 16
0.5 ± 0.2
15.9
15.9
18 17 16 15 14 13 12 11 10
18 17 16 15 14 13 12 11 10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
INDEX MARK
INDEX MARK
22.0
QUARTZ GLASS
0.46
0.46
2.54
2.54
P 2.54 × 8 = 20.32
P 2.54 × 8 = 20.32
KMPDA0135EA
KMPDA0136EA
ꢀ S4111-35Q, S4114-35Q
ꢀꢀS4111-46Q, S4114-46Q
65.0 ± 0.8
50.8 ± 0.6
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
ACTIVE AREA
45.9
34.9
CH 1
CH 1
CH 46
CH 35
48 47
26 25
23 24
40 39
22 21
PIN No.12
19 20
PIN No.1 2
a
a
Type No.
a
Type No.
a
0.46
2.54
0.46
S4111-35Q 1.45
S4114-35Q 1.35
S4111-46Q 1.65
S4114-46Q 1.55
2.54
P 2.54 × 23 = 58.42
P 2.54 × 19 = 48.26
KMPDA0019EC
KMPDA0021EC
ꢀꢀDetails of elements (for all types)
a
b
c
S4111-16Q/16R 1.45 0.9 0.1
S4111-35Q/46Q
4.4
0.9 0.1
S4114-35Q/46Q
c
b
c
KMPDA0112EA
3
Si photodiode array S4111/S4114 series
ꢀ Pin connections
ꢀꢀOperating circuits
16-element 35-element 46-element
Pin No.
type
KC
2
type
KC
2
type
KC
2
ꢀꢀIn the most generally used circuit, operational amplifiers are con-
nected to each channel to read the output in real time. The output of
an operational amplifier is of low impedance and thus can be easily
multiplexed.
1
2
3
4
4
4
4
6
6
6
5
8
8
8
PHOTODIODE ARRAY
MULTIPLEXER
6
7
8
9
10
12
14
16
KC
15
13
11
9
7
5
3
1
10
12
14
16
18
NC
20
22
24
26
28
30
32
34
NC
KC
35
33
31
29
27
25
23
21
19
17
15
13
11
9
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
KC
45
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
13
11
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
KMPDC0001EA
ꢀꢀIn the charge storage readout method, the charge stored in the
junction capacitance of each channel, which is proportional to the
incident light intensity, can be read out in sequence by a multiplexer.
With this method, reverse voltage must be applied to the
photodiodes, so S4111 and S4114 series are suitable. One amplifier
is sufficient but care should be taken regarding noise, dynamic
range, etc.
ADDRESS
PHOTODIODE ARRAY
BIAS
7
5
3
1
NC
MULTIPLEXER
7
5
3
1
KMPDC0002EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1002E06
Aug. 2006 DN
4
相关型号：
©2020 ICPDF网 联系我们和版权申明