S4402 [HAMAMATSU]
Si APD ヵ1 mm quadrant APD; 硅APDヵ1毫米象限APD
| 型号： | S4402 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si APD ヵ1 mm quadrant APD |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si APD
S4402
φ1 mm quadrant APD
Features
Applications
Uniform element characteristics
Low-light-level detection
Laser beam positioning
Quadrant format on one chip with φ1 mm active area
ensures uniform characteristics between elements.
Single power supply operation
Allows easy and simple operation.
General ratings
■
Parameter
Symbol
Value
Borosilicate glass
φ1 mm/4
0.17 (per 1 element)
Unit
-
Window material
Active area size
Effective active area
-
A
-
mm
mm2
Absolute maximum ratings
■
Parameter
Symbol
Topr
Tstg
Value
-20 to +60
-55 to +100
Unit
°C
°C
Operating temperature
Storage temperature
Electrical and optical characteristics (Ta=25 °C)
■
Parameter
Symbol
Condition
Min.
Typ.
400 to 1000
800
Max.
-
-
-
-
200
-
2.0
Unit
nm
nm
A/W
%
V
V/°C
nA
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
-
-
-
-
-
λ
λp
S
M=100
λ
=800 nm, M=1
0.5
75
150
0.65
0.4
Quantum efficiency
Breakdown voltage
Temperature coefficient of VBR
Dark current
QE
VBR
-
λ=800 nm, M=1
IR=100 µA
ID
M=100
-
-
-
-
M=100, λ=800 nm
RL=50 Ω, -3 dB
M=100, f=1 MHz
M=50, f=10 kHz
Io=10 nA
Cut-off frequency
fc
Ct
x
310
8
-
-
-
MHz
pF
-
Terminal capacitance
Excess noise figure
0.35
1
Si APD S4402
■ Spectral response
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
0.7
100 nA
10 nA
1 nA
0.6
0.5
0.4
0.3
0.2
100 pA
10 pA
0.1
0
200
400
600
800
1000
0
50
100
150
200
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
KAPDB0046EA
KAPDB0047EA
■ Terminal capacitance vs. reverse voltage
■ Gain vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
(Typ. Ta=25 ˚C)
103
1 nF
102
101
100
10-1
100 pF
10 pF
1 pF
10-2
10-1
100
101
102
103
0
50
100
150
200
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KAPDB0048EA
KAPDB0049EA
■ Cross-talk example
■ Dimensional outline (unit: mm)
(Ta=25 ˚C, λ=800 nm, M=100)
100
9.2 ± 0.2
WINDOW
8.2 ± 0.1
3.0 MIN.
10
PHOTOSENSITIVE
SURFACE
STAND OFF
0.07
0.45
1
LEAD
1
DETAILS OF ACTIVE AREA
(DESIGN DIMENSION)
5.8
3.5
0.1
0
200
400
600
800
1000
1200
POSITION (µm)
KAPDB0050EA
CASE GND
KAPDA0021EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1002E02
Mar. 2005 DN
2
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