S5573 [HAMAMATSU]

Si PIN photodiode; 硅PIN光电二极管
S5573
型号: S5573
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

Si PIN photodiode
硅PIN光电二极管

光电 二极管 光电二极管
文件: 总2页 (文件大小:143K)
中文:  中文翻译
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P H O T O D I O D E  
Si PIN photodiode  
,
,
,
S7797 S5052 S8255 S5573  
φ3 mm lens plastic package  
These Si PIN photodiodes are molded into to a clear plastic package with a φ3 mm lens. To meet your application, various types are  
available with different time response characteristics.  
Features  
Applications  
Clear plastic package with φ3 mm lens  
High-speed response  
Laser diode monitor in optical disk drive (high-speed APC)  
Spatial light transmission  
S7797: 500 MHz Typ. (V  
S5052: 500 MHz Typ. (V  
S8255: 200 MHz Typ. (V  
R
R
R
=2.5 V)  
=5 V)  
=5 V)  
S5573: 80 MHz Typ. (VR=5 V)  
General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Active  
area size  
Effective  
active area  
Reverse  
voltage  
VR Max.  
(V)  
Power  
Operating  
dissipation temperature temperature  
Storage  
Package  
Type No.  
P
(mW)  
Topr  
(°C)  
Tstg  
(°C)  
(mm)  
(mm)  
(mm2)  
7.0  
S7797  
S5052  
S8255  
S5573  
Plastic package  
with lens  
20  
50  
-25 to +85 -40 to +100  
φ3.0  
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Photo sensitivity  
S
(A/W)  
Short  
circuit  
current  
Isc  
100 lx  
2856 K  
(µA)  
Cut-off  
frequency  
fc  
Spectral  
response sensitivity  
range wavelength  
Peak  
Temp.  
coefficient  
of ID  
Terminal  
Dark current  
ID  
capacitance  
Ct  
f=1 MHz  
NEP  
Type No.  
RL=50 Ω  
-3dB  
TCID  
λ
λp  
660 780 830  
nm nm nm  
λp  
(nA)  
(nm)  
(nm)  
760 0.52 0.48 0.51 0.48  
800 0.46 0.4 0.45 0.45  
Typ. Max. (times/°C) (MHz)  
(pF)  
6 *1  
4 *2  
(W/Hz1/2)  
3.4 × 10-15  
5.5 × 10-15  
3.4 × 10-15  
5.3 × 10-15  
1
2
2
2
S7797  
S5052  
0.01 *1 0.3 *1  
0.02 *2 0.3 *2  
500 *1  
500 *2  
200 *2  
80 *2  
*
*
*
*
320 to 1000  
2.8  
1.15  
S8255  
S5573  
4.0 0.01 *2 1 *2  
4.5 0.025 *2 1 *2  
320 to 1060 900 0.53 0.4 0.48 0.5  
3 *2  
*1: VR=2.5 V  
*2: VR=5 V  
Si PIN photodiode S7797, S5052, S8255, S5573  
Spectral response  
Dark current vs. reverse voltage  
(Typ. Ta=25 C)  
(Typ. Ta=25 C)  
0.7  
100 pA  
S5573, S8255  
0.6  
S5573  
S5052  
S7797  
0.5  
10 pA  
0.4  
0.3  
S8255  
S5052  
1 pA  
S7797  
0.2  
0.1  
0
100 fA  
200  
400  
600  
800  
1000  
0.01  
0.1  
1
10  
100  
WAVELENGTH (nm)  
REVERSE VOLTAGE (V)  
KPINB0176EA  
KPINB0177EA  
Dark current vs. ambient temperature  
Terminal capacitance vs. reverse voltage  
(Typ. Ta=25 C, f=1 MHz)  
(Typ.)  
10 pF  
100 nA  
10 nA  
1 nA  
S7797  
S5573 (VR=5 V)  
S5052  
S5052 (VR=5 V)  
S8255 (VR=5 V)  
S8255  
S5573  
100 pA  
10 pA  
1 pA  
S7797 (V  
60  
AMBIENT TEMPERATURE (C)  
R=2.5 V)  
1 pF  
0.1  
1
10  
100  
-20  
0
20  
40  
80  
REVERSE VOLTAGE (V)  
KPINB0178EA  
KPINB0179EA  
Directivity  
Dimensional outline  
(Typ. Ta=25 C)  
1020ꢀ  
20ꢀ  
10ꢀ  
0ꢀ  
(unit: mm, tolerance unless otherwise noted: 0.1ꢀ  
6ꢀ  
100 %  
S5052  
S7797  
30ꢀ  
30ꢀ  
80 %  
60 %  
8ꢀ  
40ꢀ  
50ꢀ  
40ꢀ  
50ꢀ  
40± ± ±0.  
40. MAX0  
(INCLUDING BURR)  
.0. ± ±015  
S5573  
S8255  
LENS CENTER  
30±  
±07  
308 *  
40 %  
20 %  
60ꢀ  
70ꢀ  
60ꢀ  
70ꢀ  
80ꢀ  
90ꢀ  
80ꢀ  
90ꢀ  
10.  
±045  
±045  
.054  
RELATIVE SENSITIVITY  
KPINB0180EA  
Chip position accuracy with respect to the  
package dimension marked *  
X, Y±±0.  
θ≤±. ꢀ  
KPINA0032EA  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.  
HAMAMATSU PHOTONICS K.K., Solid State Division  
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01  
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741  
Cat.No.KPIN1047E01  
Apr. 2001 DN  

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