S5767-100 [HAMAMATSU]
Logic Output Photo IC, PLASTIC PACKAGE-3;
| 型号： | S5767-100 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Logic Output Photo IC, PLASTIC PACKAGE-3 编码器 输出元件 光电 |
| 文件： | 总3页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low-voltage operation photo IC
S5767-100
S5768-100
Operation at low voltage from 2.2 V
The S5767-100 and S5768-100 are digital output photo ICs consisting of a photodiode, an amplifier, a schmitt trigger circuit and
an output transistor, all integrated in a single chip and molded into a clear plastic package.
Features
Applications
Low-voltage operation: 2.2 to 7 V
Clear plastic package with lens
Low-speed optical links
Rotary encoders
Low current consumption
Transistor output with built-in pull-up resistor
S5767-100: “H” level output at light input
S5768-100: “L” level output at light input
Absolute maximum ratings (Ta=25 °C)
Parameter
Supply voltage
Output voltage
Symbol
Vcc
Vo
Value
-0.5 to +7
-0.5 to +7
Unit
V
V
Low level output current
Power dissipation
Operating temperature
Storage temperature
Soldering
Io
P
Topr
Tstg
-
8
250
-25 to +85
-40 to +100
mA
mW
°C
°C
-
260 °C, 3 s, at least 2.5 mm away from package bottom surface
Electrical and optical characteristics (Ta=25 °C, Vcc=5 V, light source: p=890 nm LED, unless otherwise noted)
λ
S5767-100
S5768-100
Parameter
Supply voltage
Symbol
Condition
Unit
Min.
2.2
-
4.9
-
-
-
-
-
Typ.
-
0.1
-
1.5
1.2
0.1
-
Max.
Min.
2.2
-
4.9
-
-
-
-
-
Typ.
-
0.1
-
1.5
1.2
-
0.1
0.85
Max.
Vcc
VOL
VOH
ICCL
ICCH
ELH
EHL
-
7
0.4
-
3
3
0.3
-
-
7
0.4
-
3
3
-
0.3
-
V
V
V
mA
mA
IOL=4 mA *1
Low level output voltage
High level output voltage
Low level current consumption
High level current consumption
L→H Threshold illuminance
H→L Threshold illuminance
Hysterisis
2
*
*
*
1
2
μW/mm2
μW/mm2
-
λ=660 nm
3
*
0.85
E0=0 μW/mm2
E1
=0.4 μW/mm2
L→H Propagation delay time
tPLH
-
1
5
-
1.5
8
μs
RL=1.2 kΩ
CL=10 pF
H→L Propagation delay time
Peak sensitivity wavelength
Rise time
tPHL
λp
tr
-
-
-
1.5
820
0.07
8
-
-
-
-
1
5
-
μs
nm
μs
820
0.07
E0=0 μW/mm2
E1
=0.4 μW/mm2
-
-
RL=1.2 kΩ
CL=10 pF
Fall time
tf
-
0.03
-
-
0.03
-
μs
*1: S5767-100: E (illuminance) =0 μW/mm2, S5768-100: E=0.4 μW/mm2
*2: S5767-100: E=0.4 μW/mm2, S5768-100: E=0 μW/mm2
*3: S5767-100: EHL/ELH, S5768-100: ELH/EHL
1
www.hamamatsu.com
Low-voltage operation photo IC
S5767-100, S5768-100
Spectral response
Power dissipation vs. ambient temperature
(Typ. Ta=25 °C)
(Typ.)
100
300
80
200
100
0
60
40
20
0
-25
0
25
50
75
100
200
400
600
800
1000
1200
Wavelength (nm)
Ambient temperature (°C)
KPICB0027EB
KPICB0024EA
Threshold illuminance vs. ambient temperature
Response time measurement circuit
(Typ. Vcc=5 V, normalized at Ta=25 °C, S5767-100: L→H, S5768-100: H→L)
S5767-100
1.5
IF
50 %
IF
S5767-100(X): L→H
S5768-100(X): H→L
5 V
RL
tPLH
tPHL
Vo
VOH
PULSE INPUT
90 %
0.01 µF
1
GND
1.5 V
10 %
Vo
VOL
tr
tf
S5767-100(X): H→L
S5768-100(X): L→H
KPICC0137EA
0.5
S5768-100
IF
IF
50 %
tPLH
5 V
RL
0
-50
PULSE INPUT
-25
0
25
50
75
100
Vo
tPHL
0.01 µF
VOH
90 %
GND
AMBIENT TEMPERATURE (°C)
1.5 V
KPICB0029EB
10 %
VOL
tf
tr
KPICC0138EA
2
Low-voltage operation photo IC
S5767-100, S5768-100
Dimensional outline (unit: mm)
4.3 0.3
(INCLUDING BURR)
4.15
5°
10°
3.0
2.4
Gate burr
2.54
0.6
1.4
1.7
R 0.9
10°
5°
0.6 0.3
0.45
0.45
(1.27)
2.54 0.5
(SPECIFIED AT THE LEAD ROOT)
Tolerance unless otherwise noted: 0.2, 2°
Shaded area indicates burr.
GND
VO
Values in parentheses are not
guaranteed, but for reference.
Lead surface finish: Silver plating
Packing: Polyethylene pack [anti-static type]
(200 pcs/pack)
Vcc
KPICA0024EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
3
Cat. No. KPIC1037E04 Sep. 2008 DN
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