S7017 [HAMAMATSU]

CCD area image sensor; CCD面积图像传感器


型号：	S7017
厂家：	HAMAMATSU CORPORATION
描述：	CCD area image sensor CCD面积图像传感器传感器图像传感器 CD
文件：	总8页 (文件大小：183K)
中文：	中文翻译
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I M A G E S E N S O R

CCD area image sensor

S7017 series

Four-stage TE-cooled, front-illuminated FFT-CCDs

S7017 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. By using the

binning operation, S7017 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes

S7017 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing

speed compared with conventional methods by which signals are digitally added by an external circuit. S7017 series also features low noise and

low dark signal (MPP mode operation). These enable low-light-level detection and long integration time, thus achieving a wide dynamic range.

S7017 series has a pixel size of 24 × 24 µm and is available in active area of 24.576 (H) × 2.976 (V) and 24.576 (H) × 6.048 (V) mm.

A four-stage Peltier element is built into the same package for thermoelectric cooling. At room temperature operation, the device can be cooled

down to -70 ˚C with using forced air cooling. In addition, since both the CCD chip and Peltier element are hermetically sealed, no dry air is

required, thus allowing easy handling.

Features

Applications

ꢀ 1024 (H) × 124 (V) and 1024 (H) × 252 (V) pixel format

ꢀ Pixel size: 24 × 24 µm

ꢀ 100 % fill factor

ꢀ Wide dynamic range

ꢀ Low dark current

ꢀ Astronomy

ꢀ Scientific measuring instrument

ꢀ Fluorescence spectrometer

ꢀ Raman spectrophotometer

ꢀ Optical and spectrophotometric analyzer

ꢀ For low-light-level detection requiring

ꢀ Low readout noise

ꢀ MPP operation

ꢀ Four-stage TE-cooled

Selection and order guide

ꢀꢀ

Number of

active pixels

1024 ×124

1024 × 252

Active area

Type No.

Cooling

total pixels

1044 × 128

1044 × 256

[mm (H) × mm (V)]

24.576 × 2.976

24.576 × 6.048

S7017-1007

S7017-1008

Four-stage

TE-cooled

S7017 series has a hermetically-sealed package with AR-coated sapphire window.

General ratings

ꢀꢀ

Parameter

Specification

CCD structure

Fill factor

Full frame transfer

100 %

S7017-1007: 1024 (H) × 124 (V)

S7017-1008: 1024 (H) × 252 (V)

24 (H) × 24 (V) µm

Number of active pixels

Pixel size

S7017-1007: 24.576 (H) × 2.976 (V) mm

S7017-1008: 24.576 (H) × 6.048 (V) mm

2 phase

Active area

Vertical clock phase

Horizontal clock phase

Output circuit

Package

2 phase

One-stage MOSFET source follower

28 pin metal package

Window

AR coated Sapphire

CCD area image sensor S7017 series

ꢀꢀAbsolute maximum ratings (Ta=25 °C)

Parameter

Operating temperature

Storage temperature

OD voltage

RD voltage

ISV voltage

ISH voltage

IGV voltage

IGH voltage

SG voltage

OG voltage

RG voltage

TG voltage

Vertical clock voltage

Horizontal clock voltage

Symbol

Topr

Tstg

VOD

VRD

VISV

VISH

VIG1V, VIG2V

VIG1H, VIG2H

VSG

Min.

-50

-100

-0.5

-10

Typ.

Max.

+30

+70

+25

+18

+15

Unit

°C

VOG

VRG

VTG

VP1V, VP2V

VP1H, VP2H

-10

Operating conditions (MPP mode, Ta=25 °C)

ꢀꢀ

Parameter

Output transistor drain voltage

Reset drain voltage

Symbol

VOD

VRD

Min.

11.5

Typ.

Max.

12.5

Unit

Output gate voltage

VOG

Substrate voltage

VSS

Test point (vertical input source)

Test point (horizontal input source)

Test point (vertical input gate)

Test point (horizontal input gate)

Vertical shift register

clock voltage

Horizontal shift register

clock voltage

VISV

VISH

VRD

-8

-7

VIG1V, VIG2V

VIG1H, VIG2H

VP1VH, VP2VH

VP1VL, VP2VL

VP1HH, VP2HH

VP1HL, VP2HL

VSGH

-8

-9

High

Low

High

Low

High

Low

High

Low

High

Low

Summing gate voltage

Reset gate voltage

VSGL

VRGH

VRGL

VTGH

-9

-7

Transfer gate voltage

VTGL

-8

Electrical characteristics (Ta=25 °C)

ꢀꢀ

Parameter

Signal output frequency

Symbol

frg

Remark

Min.

Typ.

3,200

6,400

300

150

0.99999

Max.

2,000

Unit

kHz

Reset clock frequency

Vertical shift register

capacitance

S7017-1007

S7017-1008

CP1V, CP2V

Horizontal shift register capacitance

Summing gate capacitance

Reset gate capacitance

Transfer gate capacitance

Transfer efficiency

CP1H, CP2H

CSG

CRG

CTG

CTE

0.99995

DC output level

Vout

Output impedance

Power dissipation

kΩ

*^2,*³

*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.

*2: VOD=20 V , Load resistance=22 kΩ

*3: Power dissipation of the on-chip amplifier.

CCD area image sensor S7017 series

Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

ꢀ

Parameter

Symbol

Vsat

Remark

Min.

150

300

Typ.

Fw × Sv

300

Max.

Unit

Saturation output voltage

Full well

capacity

Vertical

Horizontal

600

CCD conversion efficiency

1.8

2.2

µV/e

+25 °C

Dark current

0 °C

400

0.0015

3,000

150

0.01

e /pixel/s

(MPP mode)

-70 °C

Readout noise

e rms

Line binning

Area scanning

Spectral response range

Photo response non-uniformity

Point defects

25,000

12,500

75,000

37,500

400 to 1,100

Dynamic range

PRNU

Blemish

Cluster defects

Column defects

*4: Large horizontal full well for line binning operation.

*5: VOD=20 V , Load resistance=22 kΩ

*6: Dark current nearly doubles for every 5 to7 °C increase in temperature.

*7: -40 °C, operating frequency is 80 kHz.

*8: DR = Fw / Nr

*9: Measured at half of the full well capacity. PRNU (%) = noise / signal × 100, noise: fixed pattern noise (peak to peak)

*10: White spots > 3 % of full well at 0 °C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent

pixels

*11: continuous 2 to 9 point defects

*12: continuous >10 point defects

PIN connections

ꢀꢀ

Pin No.

Symbol

P-

Description

Remark

TE-cooler-

Substrate (GND)

ISV

Test point (vertical input source)

Test point (vertical input gate-2)

Test point (vertical input gate-1)

Reset gate

Shorted to RD

Shorted to 0 V

IG2V

IG1V

Reset drain

Output transistor source

Output transistor drain

Output gate

Summing gate

TE-cooler+

Temperature sensor (hot side)

Temperature sensor (cool side)

CCD horizontal register clock-2

CCD horizontal register clock-1

Test point (horizontal input gate-2)

Test point (horizontal input gate-1)

Test point (horizontal input source)

CCD vertical register clock-2

CCD vertical register clock-1

Transfer gate

Same timing as P2H

P+

TSH1

TSC1

TSC2

P2H

P1H

IG2H

IG1H

ISH

P2V

P1V

Shorted to 0 V

Shorted to RD

Same timing as P2V *¹³

TSH2

Temperature sensor (hot side)

*13: TG is an isolation gate between vertical register and horizontal resister.

In standard operation, the same pulse of P2V should be applied to the TG.

CCD area image sensor S7017 series

ꢀꢀSpectral response without window

ꢀꢀSpectral transmittance characteristic

of window material

(Typ. Ta=25 ˚C)

100

AR COATED SAPPHIRE

400 500 600 700 800 900 1000 1100 1200

WAVELENGTH (nm)

KMPDB0051EA

KMPDB0106EA

ꢀꢀDimensional outline (unit: mm)

20.0

PIN No. 1

7.0

1.0

4.0

1st PIN INDEX MARK

35.0

47.0

PINCHED OFF TUBE

5.0

AR-COATED SAPPHIRE WINDOW

ACTIVE AREA

TYPE No.

S7017-1007 24.576 (H) 2.976 (V)

S7017-1008 24.576 (H) 6.048 (V)

0.25

50.8

KMPDA0098EA

CCD area image sensor S7017 series

ꢀꢀDevice structure, line output format

IG2V ISV

IG1V

P1V

P2V

V=124, 252

H=1024

......

ISH

21 IG1H

18 19

P2H P1H

IG2H

OD OG

2 ISOLATOIN

1024

SIGNAL OUT

4 OPTICAL

BLACK

4 OPTICAL

BLACK

4 BLANK

Pixel format

KMPDC0085EA

Left ← Horizontal Direction → Right

Blank

Optical Black

Isolation

Effective

1024

Isolation

Optical Black

Blank

Top ← Vertical Direction → Bottom

Isolation

Effective

124 or 252

Isolation

ꢀꢀTiming chart

ꢀꢀArea scanning 1 (low dark current mode)

INTEGRATION PERIOD

(Shutter must be open)

READOUT PERIOD (Shutter must be closed)

4..127 128←124+4 (ISOLATION) : S7017-1007

4..255 256←252+4 (ISOLATION) : S7017-1008

Tpwv

P1V

P2V, TG

P1H

P2H, SG

Tovr

P2V, TG

ENLARGED VIEW

Tpwh, Tpws

P1H

P2H, SG

Tpwr

D18

D19

D20

D5..D10, S1..S1024, D11..D17

KMPDC0086EA

CCD area image sensor S7017 series

Parameter

Pulse width

Symbol

Tpwv

Tprv, Tpfv

Tpwh

Tprh, pfh

Tpws

Tprs, Tpfs

Tpwr

Tprr, Tpfr

Tovr

Remark

Min.

6 *¹⁵

Typ.

Max.

Unit

µs

P1V, P2V, TG

P1H, P2H

Rise and fall time

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Overlap time

200

250

100

µs

TG – P1H

*14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.

*15: In case of S7017-1007.

ꢀꢀꢀꢀꢀArea scanning 2 (large full well mode)

INTEGRATION PERIOD

READOUT PERIOD (Shutter must be closed)

(Shutter must be open)

4..127 128←124+4 (ISOLATION) : S7017-1007

4..255 256←252+4 (ISOLATION) : S7017-1008

Tpwv

P1V

P2V, TG

P1H

P2H, SG

Tovr

P2V, TG

ENLARGED VIEW

Tpwh, Tpws

P1H

P2H, SG

Tpwr

D18

D19

D20

D5..D10, S1..S1024, D11..D17

KMPDC0100EA

Parameter

Pulse width

Symbol

Tpwv

Tprv, Tpfv

Tpwh

Tprh, Tpfh

Tpws

Tprs, Tpfs

Tpwr

Tprr, Tpfr

Tovr

Remark

Min.

Typ.

Max.

Unit

6 *¹⁷

µs

P1V, P2V, TG

P1H, P2H

Rise and fall time

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Overlap time

200

250

100

µs

TG - P1H

*16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.

*17: In case of S7017-1007.

CCD area image sensor S7017 series

ꢀꢀꢀꢀꢀLine binning

INTEGRATION PERIOD

(Shutter must be open)

VERTICAL BINNING PERIOD

(Shutter must be closed)

READOUT PERIOD (Shutter must be closed)

3..126 127

3..254 255

128← 124+4 (ISOLATION): S7017-1007

256← 252+4 (ISOLATION): S7017-1008

Tpwv

P1V

Tovr

P2V, TG

P1H

Tpwh, Tpws

4..1042

1043

1044

P2H, SG

Tpwr

D19

D20

D3..D10, S1..S1024, D11..D18

KMPDC0087EA

Parameter

Symbol

Tpwv

Remark

Min.

6 *¹⁹

Typ.

Max.

Unit

µs

Pulse width

P1V, P2V, TG

P1H, P2H

Rise and fall time

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Overlap time

Tprv, Tpfv

Tpwh

Tprh, Tpfh

Tpws

Tprs, Tpfs

Tpwr

Tprr, Tpfr

Tovr

200

250

100

µs

TG – P1H

*18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.

*19: In case of S7017-1007.

Specifications of built-in TE-cooler

ꢀꢀ

Parameter

Internal resistance

Symbol

Rint

Condition

Ta=27 °C

Min.

Typ.

1.6

Max.

Unit

Ω

Th *²¹=27 °C

∆T *²²=∆Tmax

Th*²¹=27 °C

Maximum current *²⁰

Imax

Vmax

Qmax

4.4

7.4

3.0

Maximum voltage

∆T=∆Tmax

I=Imax

Tc *²⁴=Th *²¹=27 °C

Maximum heat absorption *²³

I=Imax

Maximum temperature at hot side

CCD temperature

-50

°C

Ta=25 °C

-70

*20: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that

this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation,

the supply current should be less than 60 % of this maximum current.

*21: Temperature at hot side of thermoelectric cooler.

*22: ∆T=Th - Tc

*23: This is a theoretical heat absorption level that offsets the temperature difference in the Peltier element when the maximum

current is supplied to the unit.

*24: Temperature at cool side of thermoelectric cooler.

CCD area image sensor S7017 series

(Typ. Ta=25 ˚C)

V - I

CCD TEMPERATURE - I

-20

-40

-60

-80

0.5

1.0

1.5

2.0

2.5

3.0

CURRENT (A)

KMPDB0107EA

Specifications of built-in temperature sensors

ꢀꢀ

Parameter

Resistance at cool side

Temperature coefficient of resistance at cool side

Resistance at hot side

Temperature coefficient of resistance at hot side

Symbol

Condition

T=0 °C

Min.

Typ.

1,000

0.00375

1,000

Max.

Unit

Ω

Ω/Ω

Ω

T=0 °C

0.00385

Ω/Ω

(Typ. Ta=25 ˚C)

1400

1200

1000

800

600

400

200

-100

-80

-60

-40

-20

TEMPERATURE (˚C)

KMPDB0108EA

ꢀꢀPrecaution for use (electrostatic countermeasures)

ꢀ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with

an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

ꢀ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

ꢀ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to

discharge.

ꢀ Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

ꢀꢀElement cooling/heating temperature incline rate

Element cooling/heating temperature incline rate should be set at less than 5 K/min.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Cat. No. KMPD1030E07

Apr. 2005 DN

S7017 [HAMAMATSU]

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