S7379-01 [HAMAMATSU]
PIN Photodiode, PLASTIC PACKAGE-8;
| 型号： | S7379-01 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | PIN Photodiode, PLASTIC PACKAGE-8 光电 |
| 文件： | 总4页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si PIN photodiode
,
,
S7379-01 S6695-01 S6058
Quadrant photodiode / plastic package
These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk.
Custom-designed devices (with different element shapes, number of elements, characteristics and packages) are also available to meet your
specific needs. Feel free to contact our sales office.
Features
Applications
Clear plastic package (4 × 4.8 mm)
High sensitivity
Signal readout for CD, DVD and MO (Magneto Optical) disc
Laser beam alignment
Uniform element characteristic
Low cross-talk
Position detection, etc.
Low noise
ꢀ General ratings / Absolute maximum ratings
Absolute maximum ratings
Active
area
Operating
temperature
Topr
Storage
temperature
Tstg
Elements gap
Dimensional
outline
Reverse voltage
VR Max.
Type No.
(mm)(µm)(V) (°C) (°C)
➀
➁
➂
S7379-01
20
15
10
f1.0/4 element
2.0 × 2.0/4 element
0.6 × 1.2/4 element
S6695-01
S6058
20
-25 to +85
-40 to +100
ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted, per 1 element)
Cut-off
frequency
fc
VR=10 V
RL=50 W
l=830 nm
Temp.
coefficient
of
Terminal
capacitance
Ct
VR=10 V
f=1 MHz
Spectral
response sensitivity
range wavelength
Peak
Dark current
ID
VR=10 V
All elements
Photo sensitivity
S
NEP
VR=10 V
ID
TCID
Type No.
l
lp
Typ.
(nA)
Max.
(nA)(times/°C) (MHz)
l=lp l=410 nm
(A/W)
0.19
1/2
(nm)(nm)
(pF) (W/Hz
)
(A/W)
0.55
S7379-01
0.04
0.1 *1
0.2
1 *1
80
40 *1
1
6.5 ×10-15
8.7 ×10-15
320 to
1060
900
800
1
2
S6695-01
0.65
0.18
3 *1
*
1.15
320 to
1000
S6058
0.55
0.21
0.04 *2
0.2 *2
150 *2
1 *2
6.5 ×10-15
*
*1: VR=5 V
*2: VR=3 V
1
Si PIN photodiode S7379-01, S6695-01, S6058
ꢀ Spectral response
ꢀ Photo sensitivity temperature characteristics
(Typ. Ta=25 ˚C)
(Typ. )
0.7
+1.5
+1.0
+0.5
S6695-01
QE=100 %
0.6
0.5
0.4
0.3
0.2
S6058
S6058
S7379-01
S7379-01, S6695-01
0
0.1
0
-0.5
200
400
600
800
1000
200
400
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0145EB
KMPDB0146EB
ꢀ Dark current vs. reverse voltage
ꢀ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
(Typ. Ta=25 ˚C)
100 pF
1 nA
S6695-01
100 pA
10 pF
S6695-01
S7379-01
S6058
S6058
10 pA
S7379-01
1 pF
1 pA
100 fF
100 fA
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KMPDB0147EB
KMPDB0148EB
2
Si PIN photodiode S7379-01, S6695-01, S6058
ꢀ Dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.1ꢀ
➀ S7379-01
4.1 0.2 ACTIVE AREA
(INCLUDING BURR)
a d
b c
(1.25)
(1.25)
(0.8)
(0.8)
3.4 0.4
3.4 0.4
4.0 *
PHOTOSENSITIVE
SURFACE
1.0
0.02
10.8 0.3
(2 ×) 10˚
a
b
d
c
(2 ×) 5˚
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y ≤ 0.2
NC
ANODE a
ANODE b
CATHODE COMMON
NC
θ ≤ 2˚
ANODE c
ANODE d
CATHODE COMMON
KMPDA0137EA
➁ S6695-01
4.1 0.2
(INCLUDING BURR)
a d
b c
1.5 0.4
1.5 0.4
4.0 *
7.0 0.3
ELECTRODE
0.7 0.3
0.7 0.3
PHOTOSENSITIVE
SURFACE
(2 ×) 10˚
a
b
d
c
(2 ×) 5˚
0.015
2.0
ANODE a
CATHODE COMMON
ANODE b
ANODE c
CATHODE COMMON
ANODE d
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y ≤ 0.2
θ ≤ 2˚
KMPDA0121EA
3
Si PIN photodiode S7379-01, S6695-01, S6058
➂ S6058
4.1 0.2 ACTIVE AREA
(INCLUDING BURR)
a
b
d
c
(1.25)
(1.25)
(0.8)
3.4 0.4
(0.8)
3.4 0.4
4.0 *
ELECTRODE
PHOTOSENSITIVE
SURFACE
10.8 0.3
(2 ×) 10˚
a
d
c
b
(2 ×) 5˚
0.01
0.6
NC
ANODE a
ANODE b
CATHODE COMMON
NC
ANODE c
ANODE d
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y ≤ 0.2
θ ≤ 2˚
CATHODE COMMON
KMPDA0007EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1053E05
May 2002 DN
4
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