S8193 [HAMAMATSU]
Si photodiode Detector for X-ray monitors; 硅光电二极管检测器的X射线监视器
| 型号： | S8193 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si photodiode Detector for X-ray monitors |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si photodiode
S8193
Detector for X-ray monitors
Features
Applications
High sensitivity, high reliability photodiode with
ceramic scintillator
X-ray analysis, X-ray detection
High X-ray sensitivity: 1.8 times that of CWO
Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
Unlike CsI, has no deliquescence
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Max.5
Unit
V
Reverse voltage
VR
Operating temperature
Storage temperature
Topr
Tstg
-10 to +60
-20 to +70
°C
°C
■ Electrical and optical characteristics (without scintillator, Ta=25°C)
Parameter
Symbol
Condition
Min.
Typ.
190 to 1000
Max.
-
-
26
5
50
-
Unit
nm
nm
Spectral response range
Peak sensitivity wavelength
-
λ
λp
720
0.
0.
2
950
-
-
-
-
-
A/W
A/W
λ=500 nm
λ=λp
VR=10 mV
VR=0 V, f=10 kHz
Photo sensitivity
S
-
Dark current
Terminal capacitance
ID
Ct
pA
pF
■ X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm)
X-ray tube voltage
Typ.
30
Unit
nA
120 keV
Note) Depends on equipment and measurement conditions.
1
Si photodiode S8193
■ Dark current vs. reverse voltage
■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
1 nA
100 nF
10 nF
1 nF
100 pA
10 pA
1 pA
100 fA
100 pF
0.01
0.1
1
10
0.1
1
10
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KSPDB0152EA
KSPDB0153EA
■ Dimensional outline (unit: mm)
10.1 ± 0.1
PHOTOSENSITIVE
SURFACE
CERAMIC SCINTILLATOR
8.9
0.5
LEAD
9.2 ± 0.3
7.4 ± 0.2
ANODE
TERMINAL MARK
KSPDA0129EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1042E02
Jan. 2004 DN
2
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