S9037 [HAMAMATSU]
CCD image sensor High-speed operation, back-thinned FFT-CCD; CCD图像传感器的高速运转,薄型背照式FFT - CCD![S9037](http://pdffile.icpdf.com/pdf1/p00115/img/icpdf/S9037_629060_icpdf.jpg)
型号: | S9037 |
厂家: | ![]() |
描述: | CCD image sensor High-speed operation, back-thinned FFT-CCD |
文件: | 总9页 (文件大小:182K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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I M A G E S E N S O R
CCD image sensor
S9037/S9038 series
High-speed operation, back-thinned FFT-CCD
S9037/S9038 series FFT-CCD image sensors were developed for high-speed line scan cameras. Since an on-chip amplifier having a wide
bandwidth is used to an image sensor, a pixel rate of 10 MHz can be obtained. S9037/S9038 series image sensors also deliver a high line scan
rate equivalent to interline CCD sensors when used in line binning operation mode, because they have an active area pixel format where the
number of vertical pixels is less than the number of horizontal pixels. This makes S9037/S9038 series ideal for line scan cameras.
S9037/S9038 series image sensors have a pixel size of 24 × 24 µm and are available in pixel formats of 512 × 4 pixels and 1024 × 4 pixels.
S9038 series has a one-stage thermoelectric cooler assembled in the same package allowing stable operation at cooled temperatures. Both
S9037/S9038 series image sensors use a quartz glass window equivalent to SUPRASIL glass that provides high transmittance even at 193 nm
wavelength. These image sensors also have stable quantum efficiency in the UV region making them ideal for excimer laser monitors.
Features
Applications
High-speed operation: 10 MHz
Pixel size: 24 × 24 µm
Excimer laser monitors
High-speed line scan cameras
Line/pixel binning operation
S9038 series: one-stage thermoelectric cooling
High quantum efficiency: 90 % or more at peak
MPP operation
ꢀ Selection guide
Type No.
Active area
[mm (H) × mm (V)]
12.288 × 0.096
24.576 × 0.096
12.288 × 0.096
24.576 × 0.096
Cooling
Non-cooled
Number of total pixels Number of active pixels
S9037-0902
S9037-1002
S9038-0902S
S9038-1002S
520 × 6
1044 × 8
520 × 6
512 × 4
1024 × 4
512 × 4
One-stage TE-cooled
1044 × 8
1024 × 4
ꢀ Specifications
Parameter
S9037-0902
16 kHz
S9037-1002
8 kHz
S9038-0902S
16 kHz
S9038-1002S
8 kHz
Line rate
Data rate
10 MHz
2 phases
2 phases
Vertical clock
Horizontal clock
Output circuit
Package
Two-stage MOSFET source follower
24 pin metal package
Quartz window equivalent to SUPRASIL
Window material *1
AR-coated sapphire
*1: Window-less type is available as option.
1
CCD image sensor S9037/S9038 series
Absolute maximum ratings (Ta=25 °C)
ꢀꢀ
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISH voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
Min.
-50
-50
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
Typ.
Max.
+70
+70
+25
+18
+18
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
OD
V
RD
V
ISH
V
IG1H
IG2H
, V
V
SG
V
OG
V
RG
TG
V
V
V
V
V
P1V
P2V
P2H
V
V
, V
P1H
, V
Operating conditions (MPP mode, Ta=25 °C)
ꢀꢀ
Parameter
Output transistor drain voltage
Reset drain voltage
Symbol
Min.
12
11.5
1
Typ.
15
12
3
Max.
-
12.5
5
Unit
V
V
OD
V
RD
V
OG
V
Output gate voltage
V
SS
V
Substrate voltage
-
0
-
V
ISH
RD
Test point (horizontal input source)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
V
IG1H
-
-8
4
-9
4
-9
4
-9
4
-9
4
V
-
-
8
-7
8
-7
8
-7
8
-7
8
-7
V
V
IG2H
P2VH
P2VL
P2HH
P2HL
V
V
V
V
, V
, V
, V
, V
, V
0
6
-8
6
-8
6
-8
6
P1VH
P1VL
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
P1HH
P1HL
V
SGH
V
V
V
V
V
Summing gate voltage
Reset gate voltage
SGL
RGH
RGL
-8
6
-8
TGH
Transfer gate voltage
TGL
V
-9
Electrical characteristics (Ta=25 °C)
ꢀꢀ
Parameter
Signal output frequency
Symbol
fc
Remark
Min.
Typ.
-
-
300
500
200
300
7
7
15
0.99995
7
500
100
Max.
Unit
MHz
MHz
pF
pF
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
-
-
-
-
-
-
-
-
-
-
-
Reset clock frequency
frg
-0902
-1002
-0902
-1002
P1V P2V
, C
Vertical shift register capacitance
C
P1H
P2H
, C
Horizontal shift register capacitance
C
SG
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Transfer efficiency
DC output level
Output impedance
C
C
C
RG
TG
2
CTE
Vout
Zo
*
-
V
Ω
mW
3
*
3,
4
Power dissipation
P
*
*
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*3: This depends on the output transistor drain voltage.
*4: Power dissipation of the on-chip amplifier.
2
CCD image sensor S9037/S9038 series
ꢀ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Min.
Parameter
Saturation output voltage
Symbol
Vsat
Typ.
Fw × Sv
300
600
1.2
4,000
200
100
Max.
Unit
V
Vertical
Horizontal (summing)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
Full well capacity
Fw
Sv
ke-
CCD node sensitivity
µV/e-
Dark current *5
(MPP mode)
Readout noise *6
25 °C
0 °C
DS
e-/pixel/s
Nr
DR
PRNU
λ
e-rms
-
%
nm
Dynamic range (line binning)
Photo response non-uniformity *7
Spectral response range (without window)
6000
-
200 to 1100
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: Condition: half of saturation output voltage.
ꢀ Spectral response (without window) *8
ꢀ Spectral transmittance characteristics
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
100
90
80
70
60
50
40
30
20
BACK-THINNED
90
80
QUARTZ WINDOW
70
AR COATED SAPPHIRE
60
50
40
30
20
10
FRONT-ILLUMINATED
(UV COAT)
FRONT-ILLUMINATED
10
0
0
200
400
600
800
1000
1200
100 200 300 400 500 600 700 800 900 1000 1100 1200
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0058EA
KMPDB0110EA
*8: Spectral response with quartz glass or AR-coated
sapphire are decreased by the transmittance.
ꢀ Spectral response of photosensitive surface
ꢀ Dark current vs. temperature
(without cap)
(Typ.)
10000
(Typ. Ta=25 ˚C)
120
1000
100
10
100
80
60
40
20
0
1
0.1
-50
-40 -30
-20 -10
0
10
20
30
100
120
140
160
180
200
TEMPERATURE (˚C)
KMPDB0037EB
WAVELENGTH (nm)
KMPDB0150EA
3
CCD image sensor S9037/S9038 series
ꢀ Device structure
S9037-0902, S9038-0902S
THINNING
SS
P1V
P2V
TG
RG
RD
ISH
OD
OS
OG
SG
P2H P1H
IG2H
IG1H
4 BLANK
512 ACTIVE
4 BLANK
KMPDC0159EC
S9037-1002, S9038-1002S
THINNING
SS
P1V
P2V
TG
RG
RD
ISH
OD
1
OS
OG
SG
P2H P1H
IG2H
IG1H
4 BLANK
6 BEVEL
1024 ACTIVE
4 BLANK
6 BEVEL
KMPDC0160EB
4
CCD image sensor S9037/S9038 series
ꢀꢀTiming chart (line binning)
INTEGRATION PERIOD
VERTICAL BINNING PERIOD
Tpwv
READOUT PERIOD
INTEGRATION PERIOD
P1V
P2V, TG
Tpwh, Tpws
P1H
P2H
SG
Tpwr
RG
Vos
KMPDC0161EÁ
Parameter
Symbol
Min.
1
-
50
-
-
50
-
-
-
5
3
Typ.
-
20
-
10
50
-
10
50
15
-
Max.
Unit
µs
ns
ns
ns
%
ns
ns
%
Pulse width
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
-
Tpws
Tprs, Tpfs
-
-
-
-
-
-
-
-
-
-
-
-
P1V, P2V, TG
P1H, P2H
SG
Tpwr
Tprr, Tpfr
Tovr
ns
ns
µs
RG
TG (P2V) - P1H
-
5
CCD image sensor S9037/S9038 series
ꢀ Dimensional outlines (unit: mm)
S9037-0902
S9037-1002
WINDOW 16.3
WINDOW 28.6
ACTIVE AREA
12.29
ACTIVE AREA 24.58
2.54
34.0
2.54
44.0
INDEX MARK
PIN No. 1
INDEX MARK
PIN No. 1
PHOTOSENSITIVE SURFACE
PHOTOSENSITIVE SURFACE
(24 ×) 0.5
(24 ×) 0.5
KMPDA0153EB
KMPDA0154EA
S9038-0902S
S9038-1002S
WINDOW 16.3
WINDOW 28.6
ACTIVE AREA
12.29
ACTIVE AREA 24.58
2.54
44.0
2.54
34.0
52.0
42.0
60.0
50.0
INDEX MARK
PIN No. 1
INDEX MARK
PIN No. 1
PHOTOSENSITIVE SURFACE
PHOTOSENSITIVE SURFACE
TE-COOLER
TE-COOLER
(24 ×) 0.5
(24 ×) 0.5
KMPDA0155EA
KMPDA0156EA
6
CCD image sensor S9037/S9038 series
ꢀ Dimensional outlines of windowless types (unit: mm)
S9037-0902N
S9037-1002N
WINDOW 28.6
WINDOW 16.3
ACTIVE AREA
12.29
ACTIVE AREA 24.58
2.54
34.0
2.54
44.0
INDEX MARK
PIN No. 1
INDEX MARK
PIN No. 1
PHOTOSENSITIVE SURFACE
PHOTOSENSITIVE SURFACE
(24 ×) 0.5
(24 ×) 0.5
KMPDA0165EA
KMPDA0166EA
S9038-0902N
S9038-1002N
WINDOW 16.3
WINDOW 28.6
ACTIVE AREA
12.29
ACTIVE AREA 24.58
2.54
44.0
2.54
34.0
52.0
42.0
60.0
50.0
INDEX MARK
PIN No. 1
INDEX MARK
PIN No. 1
PHOTOSENSITIVE SURFACE
PHOTOSENSITIVE SURFACE
TE-COOLER
TE-COOLER
(24 ×) 0.5
(24 ×) 0.5
KMPDA0167EA
KMPDA0168EA
P in connections
ꢀꢀ
P in
S 9037 series
D escription
R eset drain
O utput transistor source
O utput transistor drain
O utput gate
S 9038 series
D escription
R eset drain
O utput transistor source
O utput transistor drain
O utput gate
R em ark
+ 12 V
R em ark
+ 12 V
N o.
S ym bol
R D
O S
O D
O G
S ym bol
R D
O S
O D
O G
1
2
3
4
External R
2
=2.2 k
Ω
External R
L
=2.2 k
Ω
+ 15 V
+ 3 V
+ 15 V
+ 3 V
Sam e tim ing as
P2H
Sam e tim ing as
P2H
5
S G
S um m ing gate
S G
S um m ing gate
6
7
8
9
-
-
-
-
P 2H
P 1H
P 2H
P 1H
C C D horizontal register clock-2
C C D horizontal register clock-1
Test point (horizontal input
gate-2)
Test point (horizontal input
gate-1)
C C D horizontal register clock-2
C C D horizontal register clock-1
Test point (horizontal input
gate-2)
Test point (horizontal input
gate-1)
10
11
12
13
IG 2H
IG 1H
IS H
G N D
G N D
IG 2H
IG 1H
IS H
G N D
G N D
Test point (horizontal input
source)
Test point (horizontal input
source)
S horted to R D
S horted to R D
Sam e tim ing as
P2V
Sam e tim ing as
P2V
TG
TG
Transfer gate
Transfer gate
14
15
16
17
18
19
20
21
22
23
24
P 2V
P 1V
N C
N C
N C
P 2V
P 1V
Th1
Th2
P -
C C D vertical register clock-2
C C D vertical register clock-1
C C D vertical register clock-2
C C D vertical register clock-1
Therm istor
Therm istor
TE -cooler-
N C
P +
TE -cooler+
S ubstrate (G N D )
S S
N C
N C
N C
S ubstrate (G N D )
R eset gate
G N D
S S
N C
N C
N C
R G
R G
R eset gate
7
CCD image sensor S9037/S9038 series
ꢀ Specifications of built-in TE-cooler (Typ.)
Parameter
Internal resistance
Maximum current *8
Symbol
Condition
S9038-0902
S9038-1002
Unit
Ω
Rint Ta=25 °C
Imax Tc *9=Th *10=25 °C
Vmax Tc *9=Th *10=25 °C
Qmax
2.5
1.5
3.8
3.4
1.2
3.0
3.6
5.1
A
V
W
Maximum voltage
11
M axim um heat absorption
Maximum temperature
of heat radiating side
*
-
70
70
°C
*8: Maximum current Imax:
If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the
Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and
maintain stable operation, the supply current should be less than 60 % of this maximum current.
*9: Temperature of the cooling side of thermoelectric cooler.
*10: Temperature of the heat radiating side of thermoelectric cooler.
*11: Maximum heat absorption Qmax.
This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the
maximum current is supplied to the unit.
S9038-0902S
S9038-1002S
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
7
6
5
4
3
2
1
0
30
20
10
0
7
6
5
4
3
2
1
0
30
20
10
0
VOLTAGE vs. CURRENT
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
-10
-20
-30
-40
-10
-20
-30
-40
0
0.5
1.0
1.5
2.0
0
1
2
3
4
CURRENT (A)
CURRENT (A)
KMPDB0178EA
KMPDB0179EA
Specifications of built-in temperature sensor
ꢀꢀ
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
(Typ. Ta=25 ˚C)
1 MΩ
R1 = R2 × expB (1 / T1 - 1 / T2)
where R1 is the resistance at absolute temperature T1 (K)
R2 is the resistance at absolute temperature T2 (K)
B is so-called the B constant (K)
The characteristics of the thermistor used are as follows.
R (298K) = 10 kΩ
100 kΩ
B (298K / 323K) = 3450 K
10 kΩ
220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EA
8
CCD image sensor S9037/S9038 series
ꢀꢀPrecaution for use (Electrostatic countermeasures)
ꢀ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing and use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
ꢀ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
ꢀ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis-
charge.
ꢀ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
ꢀꢀElement cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1067E04
Oct. 2007 DN
9
相关型号:
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