S9970-1007N [HAMAMATSU]
Image Sensor;
| 型号： | S9970-1007N |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Image Sensor 传感器 换能器 图像传感器 CD |
| 文件： | 总11页 (文件大小：475K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I M A G E S E N S O R
CCD area image sensor
S9970/S9971 series
Low dark signal · low readout noise/front-illuminated FFT-CCD
The S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. The
S9970/S9971 series offer lower dark current and lower readout noise than the S7010/S7011 series that have been marketed. By using the
binning operation, the S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
makes the S9970/S9971 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and
signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. The S9970/S9971 series
also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving
a wide dynamic range.
The S9970/S9971 series have an effective pixel size of 24 × 24 µm and are available in image areas ranging from 12.288 (H) × 1.44 (V) mm2
(512 × 60 pixels) up to a large image area of 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). S9970/S9971 series are pin compatible with
S7010/S7011 series. (Operating conditions are a little bit changed from S7010/S7011 series.)
Features
Applications
-
Low dark signal: 10 e /pixel/s Typ. (0 ˚C, MPP mode)
Fluorescence spectrometer, ICP
Raman spectrometer
-
Low readout noise: 4 e rms Typ.
512 (H) × 60 (V) to 1024 (H) × 252 (V) pixel format
Pixel size: 24 × 24 µm
Line/pixel binning
Industrial inspection requiring
Semiconductor inspection
DNA sequencer
100 % fill factor
Low-light-level detection
Wide dynamic range
MPP operation
ꢀ Selection guide
Applicable
multichannel
detector head
Number of
total pixels
Number of
active pixels
Active area
[mm (H) × mm (V)]
Type no.
Cooling
S9970-0906
S9970-1006
S9970-1007
S9970-1008
S9971-0906
S9971-1006
S9971-1007
S9971-1008
532 × 64
1044 × 64
1044 × 128
1044 × 256
532 × 64
1044 × 64
1044 × 128
1044 × 256
512 × 60
1024 × 60
1024 × 124
1024 × 252
512 × 60
1024 × 60
1024 × 124
1024 × 252
12.288 × 1.440
24.576 × 1.440
24.576 × 2.976
24.576 × 6.048
12.288 × 1.440
24.576 × 1.440
24.576 × 2.976
24.576 × 6.048
Non-cooled
C7020
C7021
C7025
One-stage
TE-cooled
ꢀ General ratings
Parameter
S9970 series
S9971 series
Pixel size
24 (H) × 24 (V) µm
2-phase
Vertical clock phase
Horizontal clock phase
Output circuit
2-phase
One-stage MOSFET source follower
24 pin ceramic DIP (refer to dimensional outlines)
S9971-0906/-1006/-1007: sapphire
S9971-1008: AR-coated sapphire
Package
Window*1
Quartz glass
*1: Temporary window type (ex. S9970-0906N) and UV coat type (ex. S9970-0906UV) are available upon request.
(On the temporary window type, a window is temporarily attached by tape to protect the CCD chip and wires.)
1
CCD area image sensor S9970/S9971 series
ꢀꢀAbsolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
-15
-15
Typ.
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VOG
VRG
VTG
V
V
V
V
VP1V, VP2V
VP1H, VP2H
V
ꢀꢀOperating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Symbol
VOD
VRD
Min.
18
11.5
1
Typ.
20
12
3
Max.
22
12.5
5
Unit
V
V
Output gate voltage
VOG
V
Substrate voltage
VSS
-
0
-
V
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
VISV
VISH
-
-
VRD
VRD
0
0
4
-8
4
-8
4
-8
4
-8
4
-
-
-
-
6
-7
6
-7
6
-7
6
V
V
V
V
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
-8
-8
0
-9
0
-9
0
-9
0
-9
0
-9
20
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
VSGL
VRGH
VRGL
VTGH
VTGL
RL
-7
6
-7
24
Transfer gate voltage
V
-8
22
External load resistance
kΩ
ꢀꢀElectrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Symbol
fc
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.1
Max.
1
-
-
-
-
-
-
-
Unit
MHz
S9970/S9971-0906
750
1500
3000
6000
100
180
180
180
7
Vertical shift register
capacitance
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
CP1V, CP2V
pF
pF
Horizontal shift register
capacitance
CP1H, CP2H
-
-
-
Summing gate capacitance
Reset gate capacitance
CSG
CRG
pF
pF
7
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
-
-
-
-
60
-
-
-
-
-
18
-
Transfer gate
capacitance
100
100
100
0.99999
15
CTG
pF
Transfer efficiency*2
DC output level
Output impedance
Power dissipation*3
CTE
Vout
Zo
0.99995
-
V
kΩ
mW
12
-
-
5
15
P
-
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity
*3: Power dissipation of the on-chip amplifier plus load resistance
2
CCD area image sensor S9970/S9971 series
ꢀꢀElectrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
-
Unit
V
Saturation output voltage
Vsat
-
Fw × Sv
Full well
capacity
Vertical
Horizontal
CCD node sensitivity*4
150
300
-
-
-
-
300
600
3.5
200
10
4
150000
75000
-
-
-
-
Fw
Sv
ke
-
µV/e
Dark current*5
(MPP mode)
Readout noise*6
+25 °C
0 °C
3000
-
e /pixel/s
DS
Nr
150
18
-
-
e rms
Line binning
Area scanning
75000
37500
Dynamic range*7
DR
-
-
Spectral response range
Photo response non-uniformity*8
Point defects*9
λ
-
-
-
-
-
400 to 1100
-
10
0
0
0
nm
%
PRNU
-
-
-
-
Cluster defects*10
Column defects*11
Blemish
-
-
*4: VOD=20 V , Load resistance=22 kΩ
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: Dynamic range (DR) = Full well capacity / Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
Fixed pattern noise (peak to peak)
Photo response non-uniformity =
× 100 [%]
Signal
*9: White spots
Pixels that generate dark current higher than 3% of the saturation. (Measured at 0 °C, Ts=1 s)
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*10: 2 to 9 contiguous defective pixels
*11: 10 or more contiguous defective pixels
ꢀꢀSpectral response (without window)*12
ꢀꢀSpectral transmittance characteristics of window material
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
50
40
30
20
10
0
90
80
Quartz glass
70
AR-coated sapphire
60
Sapphire
50
40
30
20
10
UV-coated
0
100 200 300 400 500 600 700 800 900 1000
200 300 400 500 600 700 800 900 100011001200
Wavelength (nm)
Wavelength (nm)
KMPDB0244EB
KMPDB0310EA
*12: Spectral response with sapphire or AR-coated sapphire is
decreased according to the spectral transmittance charac-
teristic of window material.
3
CCD area image sensor S9970/S9971 series
ꢀꢀDark current vs. temperature
ꢀ Window material
Type No.
Window material
Quartz glass*13
(option: window-less)
Sapphire*14
(option: window-less)
AR-coated sapphire*14
(option: window-less)
(Typ.)
100
S9970 series
S9971-0906/-1006/-1007
S9971-1008
10
1
*13: Resin sealing
*14: Hermetic sealing
0.1
0.01
-50
-40
-30
-20
-10
0
10
20
Temperature (˚C)
KMPDB0305EA
ꢀꢀDevice structure (conceptual drawing of top view in dimensional outlines)
IG2V ISV
IG1V
24
SS
20
P1V
15
TG
16
P2V
14
22
23
V
1
V=60, 124, 252
H=512, 1024
......
......
H
RG
RD
OS
1
2
3
13
ISH
12 IG1H
6
4
5
9
10
11
IG2H
2 isolation pixels
2 isolation pixels
SG
OD OG
P2H P1H
4 optical
black pixels 4 blank pixels
512 or 1024
4 optical
4 blank pixels black pixels
signal out
KMPDC0015EC
Pixel format
Left ← Horizontal Direction → Right
Blank
4
Optical Black
Isolation
Effective
512 or 1024
Isolation
Optical Black
Blank
4
4
2
2
4
Top ← Vertical Direction → Bottom
Isolation
2
Effective
60, 124 or 252
Isolation
2
4
CCD area image sensor S9970/S9971 series
ꢀꢀTiming chart
Line binning
Integration period
(shutter has to be open)
Vertical binning period
(shutter has to be closed)
3.. 62 63
Readout period (shutter has to be closed)
64← 60 + 4 (isolation): S997 /1-0906/-1006
*
*
3..126 127
3..254 255
128← 124 + 4 (isolation): S997 /1-1007
Tpwv
256← 252 + 4 (isolation): S997 /1-1008
*
1
2
P1V
Tovr
P2V, TG
P1H
4..530 531
4..1042 1043
532 : S997 /1-0906
*
Tpwh, Tpws
1044: S997 /1-1006/-1007/-1008
*
1
2
3
P2H, SG
Tpwr
D1
RG
OS
D2
S1..S512
D19
D20: S997 /1-0906
*
D3..D10, S1..S1024, D11..D18
: S997 /1-1006/-1007/-1008
*
KMPDC0227EB
Area scanning (large full well mode)
Integration period
Readout period (shutter has to be closed)
(shutter has to be open)
4.. 63 64← 60 + 4 (isolation): S997 /1-0906/-1006
*
4..127 128←124 + 4 (isolation): S997 /1-1007
*
Tpwv
4..255 256←252 + 4 (isolation): S997 /1-1008
*
1
2
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
Enlarged view
Tpwh, Tpws
P1H
P2H, SG
RG
Tpwr
D1
OS
D2
D3
D4
S1..S512
D18
D19
D20: S997 /1-0906
*
D5..D10, S1..S1024, D11..D17
: S997 /1-1006/-1007/-1008
*
KMPDC0229EB
Parameter
Symbol
Tpwv
Min.
1.5
3.0
6.0
12
200
500
10
-
500
10
-
100
5
Typ.
4.5
9.0
18
36
-
5000
-
50
5000
-
Max.
Unit
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Pulse width*15
µs
P1V, P2V, TG
Rise and fall times
Pulse width
Rise and fall times*15
Duty ratio
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Overlap time
Tprv, Tpfv
Tpwh
Tprh, Tpfh
-
Tpws
Tprs, Tpfs
-
Tpwr
Tprr, Tpfr
Tovr
ns
ns
ns
%
ns
ns
%
ns
ns
µs
P1H, P2H
SG
50
500
-
RG
TG - P1H
3
6
*15: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.
5
CCD area image sensor S9970/S9971 series
ꢀꢀDimensional outlines (unit: mm)
S9970-0906
Active area
12.288
Photosensitive
surface
1.1 ± 0.3
24
13
1
12
31.75 ± 0.3
1st pin index mark
Photosensitive surface
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0193EB
S9970-1006/-1007
Photosensitive
surface
A
1.1 ± 0.3
24
13
1
12
40.64 ± 0.41
1st pin index mark
Photosensitive surface
Active area
Type No.
A
B
24.576 (H)
24.576 (H)
1.440 (V)
2.976 (V)
S9970-1006
S9970-1007
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0194EB
S9970-1008
Active area
24.576
Photosensitive
surface
1.1 ± 0.3
24
13
1
12
40.64 ± 0.41
1st pin index mark
Photosensitive surface
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0195EB
6
CCD area image sensor S9970/S9971 series
S9971-0906
Active area 12.288
3.2 ± 0.4
24
13
1
12
5.0 ± 0.3
32.0 ± 0.3
50.0 ± 0.3
1st pin index mark
Photosensitive surface
TE-cooler
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0196EB
S9971-1006/-1007
A
3.2 ± 0.4
24
13
1
12
5.0 ± 0.3
40.64 ± 0.41
58.84 ± 0.13
1st pin index mark
Photosensitive surface
Active area
B
Type No.
A
C
24.576 (H)
24.576 (H)
1.440 (V)
2.976 (V)
7.5
7.1
S9971-1006
S9971-1007
TE-cooler
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0197EB
S9971-1008
Window 28.6*
Active area 24.576
24
13
1
12
2.54 ± 0.13
44.0 ± 0.44
52.0
60.0 ± 0.3
1st pin indication pad
Photosensitive surface
TE-cooler
(24×) 0.5 ± 0.05
* Size of window that guarantees the transmittance in the "Spectral
transmittance characteristics of window material" graph
KMPDA0198EB
7
CCD area image sensor S9970/S9971 series
ꢀ Pin connections
S9970 series
Description
Reset gate
Reset drain
Output transistor source
Output transistor drain
Output gate
S9971 series
Description
Reset gate
Reset drain
Output transistor source
Output transistor drain
Output gate
Summing gate
Thermistor
Thermistor
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2) 0 V
Test point (horizontal input gate-1) 0 V
Test point (horizontal input source) Shorted to RD
CCD vertical register clock-2
CCD vertical register clock-1
Transfer gate
Remark
(standard operation)
Pin No.
Symbol
Symbol
RG
RD
OS
OD
1
2
3
4
5
RG
RD
OS
OD
OG
SG
-
+12 V
RL=22 kΩ
+20 V
+3 V
Same timing as P2H
OG
SG
6
7
Summing gate
Th1
Th2
P2H
P1H
IG2H
IG1H
ISH
P2V
P1V
TG*16
-
P-
P+
SS
-
ISV
IG2V
IG1V
8
-
9
P2H
P1H
IG2H
IG1H
ISH
P2V
P1V
TG*16
-
-
-
SS
-
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
CCD vertical register clock-2
CCD vertical register clock-1
Transfer gate
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Same timing as P2V
TE-cooler-
TE-cooler+
Substrate (GND)
Substrate (GND)
GND
ISV
IG2V
IG1V
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Shorted to RD
0 V
0 V
*16: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should
be applied to TG.
ꢀ Specifications of built-in TE-cooler (Typ.)
Parameter
Internal resistance
Maximum current*17
Maximum voltage
Maximum heat
absorption*20
Symbol
Rint Ta=25 °C
Imax Tc*18=Th*19=25 °C
Vmax Tc*18=Th*19=25 °C
Condition
S9971-0906
S9971-1006/-1007
S9971-1008
Unit
Ω
2.8
1.5
4.4
6.0
1.5
8.8
1.2
3.0
3.6
A
V
Qmax
-
3.4
6.7
70
5.1
W
Maximum temperature
of hot side
°C
*17: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply
current should be less than 60 % of this maximum current.
*18: Temperature of cool side of thermoelectric cooler
*19: Temperature of hot side of thermoelectric cooler
*20: This is a heat absorption when the maximum current is supplied to the TE-cooler.
8
CCD area image sensor S9970/S9971 series
ꢀꢀTE-cooler characteristics
S9971-0906
S9971-1006/-1007
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
5
4
3
2
1
0
10
8
20
10
0
20
10
0
Voltage vs. Current
Voltage vs. current
CCD temperature vs. Current
CCD temperature vs. current
6
4
-10
-20
-30
-10
-20
-30
2
0
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
Current (A)
Current (A)
KMPDB0176EB
KMPDB0177EB
S9971-1008
(Typ. Ta=25 ˚C)
7
6
5
4
3
2
1
0
30
20
10
0
Voltage vs. current
CCD temperature vs. current
-10
-20
-30
-40
0
1
2
3
4
Current (A)
KMPDB0179EB
9
CCD area image sensor S9970/S9971 series
Specifications of built-in temperature sensor
ꢀꢀ
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A
relation between the thermistor resistance and absolute temperature is expressed by the following equation.
1 MΩ
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)
RT1: Resistance at absolute temperature T1 [K]
RT2: Resistance at absolute temperature T2 [K]
BT1/T2: B constant [K]
The characteristics of the thermistor used are as follows.
R298=10 kΩ
100 kΩ
B298/323=3450 K
10 kΩ
220
240
260
280
300
Temperature (K)
KMPDB0111EB
ꢀꢀPrecaution for use (Electrostatic countermeasures)
ꢀ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
ꢀ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
ꢀ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
ꢀ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
ꢀꢀElement cooling/heating temperature gradient rate
When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min.
Multichannel detector head (C7020, C7021, C7025)
Features
C7020: for S9970 series
C7021: for S9971-0906/-1006/-1007
C7025: for S9971-1008
Area scanning or full line-binnng operation
Readout frequency: 250 kHz
-
Readout noise: 20 e rms
∆T=50 ˚C (∆T changes by radiation method.)
Input
Symbol
VD1
Value
+5 Vdc, 200 mA
VA1+
VA1-
VA2
VD2
Vp
+15 Vdc, +100 mA
-15 Vdc, -100 mA
+24 Vdc, 30 mA
+5 Vdc, 30 mA (C7021, C7025)
+5 Vdc, 2.5 A (C7021, C7025)
+12 Vdc, 100 mA (C7021, C7025)
HCMOS logic compatible
HCMOS logic compatible, 1 MHz
Supply
voltage
VF
Master start
Master clock
φms
φmc
10
CCD area image sensor S9970/S9971 series
Multichannel detector head controller
Type no.
S7557
Interface
SCSI
Photo
Accessories
·SCSI terminator
·Fuse (2.5 A)
·Detector head connection cable
·AC cable
·Software (compatible OS: Windows 98/ME*21)
·Operation manual
·USB cable
·Fuse (2.5 A)
·Detector head connection cable
·AC cable
S7557-01
USB2.0
·Software (compatible OS: Windows 2000/XP/Vista)
·Operation manual
·MOS adapter
Note: SCSI cable and SCSI board (card) are not supplied with the C7557
*21: This software may be run on Windows 2000/NT/XP with a simple task. For information on how to do this, please consult
with our sales office.
ꢀꢀConnection example
Shutter*
timing pulse
AC cable (100 to 240 V; included with the C7557-01
)
Trig.
POWER
USB cable
SIGNAL I/O
Dedicated cable
(Included with the C7557-01)
(Included with
the C7557-01)
TE CONTROL I/O
C7557-01
Image sensor
+
Multichannel
detector head
PC (Windows 2000/XP/Vista)
(USB 2.0)
* Shutter, etc. are not available.
KACCC0402EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2009 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1089E07
Nov. 2009 DN
11
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