HMS51232M4G [HANBIT]
SRAM MODULE 2Mbyte (512K x 32-Bit), 72PIN SIMM, 5V; SRAM模块2Mbyte （ 512K ×32位） ， 72PIN SIMM ， 5V
| 型号： | HMS51232M4G |
| 厂家： | 
HANBIT ELECTRONICS CO.,LTD |
| 描述： | SRAM MODULE 2Mbyte (512K x 32-Bit), 72PIN SIMM, 5V |
| 文件： | 总6页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HANBit
HMS51232M4G
SRAM MODULE 2Mbyte (512K x 32-Bit), 72PIN SIMM, 5V
HMS51232M4G
Part No.
GENERAL DESCRIPTION
The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit
configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board.
PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable
inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE) and write enable(/WE)
can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished
when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V
DC power supply and all inputs and outputs are fully TTL-compatible.
PIN ASSIGNMENT
FEATURES
PIN
SYMBOL
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
SYMBOL
DQ13
DQ5
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
SYMBOL
DQ27
DQ19
A3
w Access times : 10, 12, 15, 17 and 20
1
NC
w High-density 2Mbyte design
2
NC
w High-reliability, high-speed design
w Single + 5V ±0.5V power supply
w Easy memory expansion /CE and /OE functions
w All inputs and outputs are TTL-compatible
w Industry-standard pinout
3
PD2
PD3
Vss
DQ14
DQ6
4
A10
5
DQ15
DQ7
A4
6
PD0
PD1
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Vcc
A11
7
Vss
A5
8
/WE
A12
w FR4-PCB design
9
A15
Vcc
w Part Identification
10
11
12
13
14
15
16
17
18
19
20
21
22
A14
A13
- HMS51232M4G : SIMM design
/CE2
/CE1
/CE4
/CE3
A17
A6
DQ20
DQ28
DQ21
DQ29
DQ22
DQ30
DQ23
DQ31
Vss
OPTIONS
w Timing
MARKING
10ns access
12ns access
15ns access
17ns access
20ns access
w Packages
72-pin SIMM
-10
-12
-15
-17
-20
A16
A0
/OE
A7
Vss
A1
DQ24
DQ16
DQ25
DQ17
A8
PD0 = Open
PD1 = Open
PD2 = Vss
A2
A18
A9
NC
M
23
24
DQ12
DQ4
47
48
DQ26
DQ18
71
72
NC
NC
PD3 = Open
72-Pin SIMM
TOP VIEW
1
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
FUNCTIONAL BLOCK DIAGRAM
32
DQ0 - DQ31
19
A0 - A18
A0-18
DQ 0-7
/WE
/OE
U1
/CE
/CE1
A0-18
DQ 8-15
/WE
/OE
U2
/CE
/CE2
A0-18
DQ16-23
/WE
/OE
U3
/CE
/CE3
A0-18
DQ24-31
/WE
/OE
/WE
/OE
U4
/CE
PD0 = Open
PD1 = Open
PD2 = Vss
/CE4
PD3 = Open
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
L
H
L
L
L
X
H
H
L
HIGH-Z
HIGH-Z
Dout
STANDBY
ACTIVE
ACTIVE
ACTIVE
NOT SELECTED
READ
WRITE
X
Din
2
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VIN,OUT
VCC
RATING
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
-0.5V to +7.0V
-0.5V to +7.0V
4W
PD
o o
-65 C to +150 C
Storage Temperature
TSTG
TA
o o
0 C to +70 C
Operating Temperature
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
o
RECOMMENDED DC OPERATING CONDITIONS
( T =0 to 70 C )
A
SYMBOL
MIN
TYP.
MAX
PARAMETER
Supply Voltage
Ground
VCC
VSS
VIH
VIL
4.5V
0
5.0V
5.5V
0
0
-
Input High Voltage
2.2
Vcc+0.5V**
0.8V
Input Low Voltage
-0.5*
-
*
VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
** VIH(Max.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
o
o
DC AND OPERATING CHARACTERISTICS (1)(0 C ≤ T ≤ 70 C ; Vcc = 5V ± 0.5V )
A
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
PARAMETER
Input Leakage Current
VIN = Vss to Vcc
ILI
-2
2
2
µA
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
Output Leakage Current
IL0
-2
µA
Output High Voltage
Output Low Voltage
VOH = -4.0mA
VOH
VOL
2.4
-
V
V
VOL = 8.0mA
0.4
o
* Vcc=5.0V, Temp=25 C
DC AND OPERATING CHARACTERISTICS (2)
MAX
-17
DESCRIPTION
TEST CONDITIONS
SYMBOL
UNIT
-15
-20
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
Power Supply
Current: Operating
lCC
170
165
160
mA
Min. Cycle, /CE=VIH
lSB
50
10
50
10
50
10
mA
mA
Power Supply
Current: Standby
f=0MHZ, /CE≥VCC-0.2V,
VIN≥ VCC-0.2V or VIN≤0.2V
lSB1
3
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
VI/O=0V
SYMBOL
CI/O
MAX
UNIT
pF
Input /Output Capacitance
Input Capacitance
8
7
VIN=0V
CIN
pF
* NOTE : Capacitance is sampled and not 100% tested
o
o
AC CHARACTERISTICS (0 C ≤ T ≤ 70 C ; Vcc = 5V ± 0.5V, unless otherwise specified)
A
TEST CONDITIONS
PARAMETER
VALUE
0.V to 3V
3ns
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
1.5V
See below
Output Load (A)
+5V
Output Load (B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5V
480Ω
480Ω
DOUT
DOUT
255Ω
30pF*
255Ω
5pF*
* Including scope and jig capacitance
READ CYCLE
-15
-17
-20
PARAMETER
SYMBOL
UNIT
MIN
15
-
MAX
MIN
17
-
MAX
MIN
20
-
MAX
Read Cycle Time
tRC
tAA
-
15
15
7
-
17
17
8
-
20
20
9
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select to Output
tCO
tOE
tOLZ
tLZ
-
-
-
Output Enable to Output
-
-
-
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
0
-
0
-
0
-
3
-
3
-
3
-
tOHZ
tHZ
0
7
0
8
0
9
0
7
0
8
0
9
tOH
tPU
tPD
3
-
3
-
3
-
0
-
0
-
0
-
-
15
-
17
-
20
4
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
WRITE CYCLE
-15
-17
-20
PARAMETER
SYMBOL
UNIT
MIN
15
12
0
MAX
MIN
17
13
0
MAX
MIN
20
14
0
MAX
Write Cycle Time
tWC
tCW
tAS
-
-
-
-
-
-
7
-
-
-
-
-
-
-
-
-
8
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Set-up Time
-
Address Valid to End of Write
Write Pulse Width (/OE=High)
Write Recovery Time (/OE=Low)
Write to Output High-Z
tAW
tWP
tWR
tWZ
tDW
tDH
tOW
12
12
0
13
13
0
14
14
0
-
-
-
0
0
0
9
-
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
8
9
10
0
0
0
-
3
3
3
-
TIMING DIAGRAMS
Please refer to timing diagram chart.
FUNCTIONAL DESCRIPTION
/CE
/WE
X*
H
/OE
X
MODE
I/O PIN
High-Z
High-Z
DOUT
SUPPLY CURRENT
H
Not Select
Output Disable
Read
I SB, I SB1
ICC
L
H
L
H
L
ICC
L
L
X
Write
DIN
ICC
Note: X means Don't Care
5
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
PACKAGING INFORMATION
SIMM Design
2.54 mm
MIN
0.25 mm MAX
1.27±0.08mm
Gold: 1.04±0.10 mm
1.27
Solder: 0.914±0.10 mm
(Solder & Gold Plating Lead)
ORDERING INFORMATION
Component
Number
Part Number
Density
Org.
Package
Vcc
Speed
HMS 51232M4G-10
HMS 51232M4G-12
HMS 51232M4G-15
HMS 51232M4G-17
HMS 51232M4G-20
2MByte
2MByte
2MByte
2MByte
2MByte
72 Pin-SIMM
72 Pin-SIMM
72 Pin-SIMM
72 Pin-SIMM
72 Pin-SIMM
4EA
4EA
4EA
4EA
4EA
5V
5V
5V
5V
5V
10ns
12ns
15ns
17ns
20ns
512K x 32bit
512K x 32bit
512K x 32bit
512K x 32bit
512K x 32bit
6
HANBit Electronics Co.,Ltd.
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