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IRF511 [HARRIS]

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs; 4.9A ， 5.6A和， 80V和100V ， 0.54和0.74 Ohm的N通道功率MOSFET
IRF511
型号： IRF511
厂家： HARRIS CORPORATION    HARRIS CORPORATION
描述：

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
4.9A ， 5.6A和， 80V和100V ， 0.54和0.74 Ohm的N通道功率MOSFET
文件： 总7页 (文件大小：71K)
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相关型号：

IRF511-001PBF

 5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET

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INFINEON

IRF511-002

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-003PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-004

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-005

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-005PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-006

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-006PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-009PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-010PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-011

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511-011PBF

 5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET

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INFINEON

IRF511-012PBF

 5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET

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INFINEON

IRF511-013

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF511-013PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF511R

 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5.6A I(D) | TO-220AB

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ETC

IRF512

 N-Channel Power MOSFETs, 5.5 A, 60-100V

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FAIRCHILD

IRF512

 N-Channel Enhancement-Mode Vertical DMOS Power FETs

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SUPERTEX

IRF512

 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

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HARRIS

IRF512

 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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