关闭背景特效

IRF513 [HARRIS]

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs; 4.9A ， 5.6A和， 80V和100V ， 0.54和0.74 Ohm的N通道功率MOSFET

IRF513


元器件型号：	IRF513
生产厂家：	HARRIS CORPORATION
描述和应用：	4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs 4.9A ， 5.6A和， 80V和100V ， 0.54和0.74 Ohm的N通道功率MOSFET
PDF文件：	总7页 (文件大小：71K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF513参数

IRF513-001PBF

Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2 IRF

IRF513-013PBF

Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF513R

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4.9A I(D) | TO-220AB

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43 ETC

IRF520

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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478 STMICROELECTR

IRF520

N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

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75 SUPERTEX

IRF520

9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET

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281 INTERSIL

IRF520

N-Channel Power MOSFETs, 11 A, 60-100 V

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920 FAIRCHILD

IRF520

Power MOSFET

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298 VISHAY

IRF520-019PBF

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRF520-030

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

IRF520A

Advanced Power MOSFET

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269 FAIRCHILD

IRF520A

Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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2 MOTOROLA

IRF520A16A

Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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1 MOTOROLA

IRF520A16A

Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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3 MOTOROLA

IRF520AJ

Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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1 MOTOROLA

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