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元器件品牌
IRF531R
[HARRIS]
N-Channel Power MOSFETs Avalanche Energy Rated; N沟道功率MOSFET的额定雪崩能量
元器件型号：
IRF531R
生产厂家：
HARRIS CORPORATION
描述和应用：
N-Channel Power MOSFETs Avalanche Energy Rated
N沟道功率MOSFET的额定雪崩能量
晶体 晶体管 开关 脉冲 局域网
PDF文件：
总5页 (文件大小：394K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF531R参数
查看货源
IRF532
N-Channel Power MOSFETs Avalanche Energy Rated
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HARRIS
IRF532
N-Channel Power MOSFETs, 20 A, 60-100 V
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21
FAIRCHILD
IRF532
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
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MOTOROLA
IRF532
N-CHANNEL POWER MOSFETS
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56
SAMSUNG
IRF532
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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STMICROELECTR
IRF532
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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35
STMICROELECTR
IRF532
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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11
STMICROELECTR
IRF532
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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17
STMICROELECTR
IRF532
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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7
STMICROELECTR
IRF532
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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46
STMICROELECTR
IRF532-001
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
IRF
IRF532-002
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
IRF
IRF532-003
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
IRF
IRF532-004
暂无描述
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0
IRF
IRF532-006
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
IRF
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