BAV23A_18 [HDSEMI]
SOT-23 Plastic-Encapsulate Diodes;
| 型号： | BAV23A_18 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOT-23 Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：2725K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV23A/C/S
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
SOT- 23
●
●
●
Fast Switching Speed
High Conductance
For General Purpose Switching Applications
3
Marking:
2
BAV23A
BAV23S
BAV23C
1
MARKING:KT7
MARKINGKT6
MARKING:KL31
Symbol
VRRM
Parameter
Value
Unit
Peak Repetitive Reverse Voltage
V
250
VRWM
Working Peak Reverse Voltage
RMS Reverse Voltage
VR(RMS)
IO
175
225
1.7
V
mA
A
Average Rectified Output Current
IFSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
PD
RΘJA
Tj
350
357
150
mW
℃/W
℃
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
-55~+150
Tstg
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Reverse voltage
Reverse current
Symbol
V(BR)
IR
Test conditions
Min
Typ
Max
Unit
V
IR=100μA
VR=250V
IF=100mA
250
0.1
1
μA
Forward voltage
VF
V
IF=200mA
1.25
5
Total capacitance
Ctot
trr
VR=0V,f=1MHz
pF
ns
Reverse recovery time
IF= IR=30mA, Irr=0.1×IR, RL=100Ω
50
1
H
igh Diode Semiconductor
Typical Characteristics
Forward Characteristics
Reverse Characteristics
1000
100
10
300
100
Pulsed
Pulsed
Ta=100℃
10
1
Ta=25℃
0.1
0.01
1
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
150
200
250
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
Power Derating Curve
Capacitance Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
400
350
300
250
200
150
100
50
Ta=25℃
f=1MHz
0
0
4
8
12
16
20
0
25
50
75
100
125
150
REVERSE VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta (℃)
2
H
igh Diode Semiconductor
SOT-23 Package Outline Dimensions
SOT-23
Suggested Pad Layout
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
4
H
igh Diode Semiconductor
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