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BC817B [HDSEMI]

SOT-23 Plastic-Encapsulate Transistors;
BC817B
型号： BC817B
厂家： Jiangsu High diode Semiconductor Co., Ltd    Jiangsu High diode Semiconductor Co., Ltd
描述：

SOT-23 Plastic-Encapsulate Transistors
文件： 总4页 (文件大小：2215K)
中文：  中文翻译
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BC817B  
HD ST0.35  
SOT-23 Plastic-Encapsulate Transistors  
TRANSISTOR( NP N )  
Features  
SOT- 23  
●
●
●
●
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
●
Complementary types: BC807 (PNP)  
Symbol  
Parameter  
Collector-Base Voltage  
Value  
50  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
C
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
45  
V
5
Collector Current  
0.35  
A
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
300  
mW  
PC  
E
B
RΘJA  
Tj  
417  
150  
℃/W  
℃
Storage Temperature  
Tstg  
-55～+150  
℃
Electrical Characteristics (T=25℃ Unless otherwise specified）  
Parameter  
Symbol  
Test conditions  
Min  
Typ  
Max  
Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
VCBO  
VCEO  
VEBO  
ICBO  
IC= 10μA, IE=0  
50  
45  
5
V
V
IC= 10mA, IB=0  
IE= 1μA, IC=0  
V
μA  
VCB= 45 V , IE=0  
VEB= 4V, IC=0  
0.1  
0.1  
600  
μA  
Emitter cut-off current  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
VBE  
VCE= 1V, IC= 100mA  
VCE= 1V, IC= 500mA  
IC= 500mA, IB= 50mA  
IC= 500mA, IB= 50mA  
VCE= 1 V, IC= 500mA  
VCB=10V ,f=1MHz  
100  
40  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
0.7  
1.2  
1.2  
V
V
V
10  
Collecter capactiance  
Cob  
pF  
V
CE= 5 V, IC= 10mA  
fT  
100  
MHz  
Transition frequency  
f=100MHz  
CLASSIFICATION OF hFE  
Rank  
BC817B-40  
250-600  
6C  
BC817B-16  
100-250  
6A  
BC817B-25  
Range  
160-400  
Marking  
6B  
1
H
igh Diode Semiconductor  
Typical Characteristics  
hFE —— IC  
Static Characteristic  
280  
240  
200  
160  
120  
80  
500  
400  
1mA  
COMMON  
EMITTER  
Ta=25℃  
Ta=100 o  
C
0.9mA  
0.8mA  
0.7mA  
0.6mA  
300  
200  
Ta=25 o  
C
0.5mA  
0.4mA  
0.3mA  
0.2mA  
40  
VCE= 1V  
IB=0.1mA  
14  
0
100  
0
2
4
6
8
10  
12  
16  
1
10  
100  
500  
COLLECTOR CURRENT IC (mA)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
VCEsat —— IC  
VBEsat —— IC  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.4  
0.3  
0.2  
0.1  
0.0  
β=10  
β=10  
Ta=25℃  
Ta=100℃  
Ta=100℃  
Ta=25℃  
500  
0.1  
1
10  
100  
0.1  
1
10  
100  
500  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
IC —— VBE  
Cob / Cib —— VCB / VEB  
100  
500  
f=1MHz  
IE=0 / IC=0  
50  
Ta=25 o  
C
100  
10  
1
Cib  
Ta=100 o  
C
10  
Ta=25℃  
Cob  
VCE=1V  
0.1  
1
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
5
10  
REVERSE VOLTAGE  
V
(V)  
BASE-EMITTER VOLTAGE  
VBE(V)  
fT ——  
IC  
Pc —— Ta  
0.4  
0.3  
0.2  
0.1  
0.0  
300  
100  
VCE=5V  
Ta=25 o  
C
10  
60  
1
10  
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE Ta (℃)  
COLLECTOR CURRENT IC (mA)  
2
H
igh Diode Semiconductor  
SOT-23 Package Outline Dimensions  
SOT-23  
Suggested Pad Layout  
JSHD  
JSHD  
3
H
igh Diode Semiconductor  
Reel Taping Specifications For Surface Mount Devices-SOT-23  
30  
4
H
igh Diode Semiconductor  

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