BZT52B11S [HDSEMI]
SOD323 Plastic-Encapsulate Diodes;
| 型号： | BZT52B11S |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOD323 Plastic-Encapsulate Diodes 测试 光电二极管 |
| 文件： | 总5页 (文件大小：1922K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT52B2V4S-BZT52B39S
SOD323 Plastic-Encapsulate Diodes
Zener Diodes
Features
SOD3 23
●
Pd
200mW
2.4V- 39V
●Vz
Applications
● Stabilizing Voltage
Item
Power dissipation
Zener current
Unit
mW
mA
Conditions
Max
200
P
Symbol
Pd
TA=25℃
IZ
/VZ
Tj
Maximum junction temperature
Storage temperature range
℃
℃
150
Tstg
-65 to +150
Electrical Characteristics（T =25℃ Unless otherwise specified）
a
Item
Symbol Unit
Conditions
Max
Thermal resistance
RθJA
VF
℃/W
Between junction and ambient
625
Forward voltage
V
IF =10mA
0.9
1
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Typical
Temperature
Coefficent
@IZTC
Maximum
Reverse
Current
Test
Current
IZTC
Maximum Zener Impedance
(Note 3)
Zener Voltage Range (Note 2)
Type
Type
Number
Code
VZ@IZT
IZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
ZZT@IZT
ZZK@IZK
IZK
IR
VR
V
mV/°C
mA
Nom(V)
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
Min(V)
2.35
Max(V)
2.45
Ω
μA
50
20
10
5
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
Max
0
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
2WX
2W1
2W2
2W3
2W4
2W5
2W6
2W7
2W8
2W9
2WA
2WB
2WC
2WD
2WE
2WF
2WG
2WH
2WI
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
600
600
600
600
600
600
600
500
480
400
150
80
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
2.65
2.75
1.0
0
2.94
3.06
1.0
0
3.23
3.37
1.0
0
3.53
3.67
5
1.0
0
3.82
3.98
3
1.0
0
4.21
4.39
3
1.0
0
4.61
4.79
3
2.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
5.00
5.20
2
2.0
5.49
5.71
1
2.0
6.08
6.32
3
4.0
6.66
6.94
2
4.0
1.2
7.35
7.65
80
1
5.0
2.5
8.04
8.36
80
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5.0
3.2
8.92
9.28
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
6.0
3.8
9.80
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
7.0
4.5
11
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
8.0
5.4
12
8.0
6.0
13
8.0
7.0
2WJ
2WK
2WL
2WM
2WN
2WO
2WP
2WQ
2WR
2WS
2WT
15
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
9.2
16
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
18
20
22
24
27
30
33
36
39
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2
H
igh Diode Semiconductor
Typical Characteristics
Zener Characteristics(VZ 5.1V to 20 V)
Temperature Coefficients
100
20
15
10
5
Ta =25℃
TYPICAL Ta VALUES
FOR BZT52BXXXS SERIES
Pulsed
PD =200mW
VZ @ IZT
10
1
0.5
0
4
4
4
6
8
10
12
14
16
18
20
22
22
22
4
4
0
6
8
10
12
14
16
18
20
22
VZ, ZENER VOLTAGE (V)
VZ, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
Typical Leakage Current
0.1
0.01
1E-3
1000
100
10
Ta=25℃
Pulsed
f=1MHz
0V BIAS
1V BIAS
Ta=100℃
Ta=25℃
BIAS AT
50% OF VZ NOM
1E-4
1000
1
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
22
VZ, NOMINAL ZENER VOLTAGE (V)
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
Effect of Zener Voltage on Zener Impedance
250
200
150
100
50
Ta=25℃
IZ(AC)=0.1IZ(DC)
f=1kHz
100
10
1
IZ=5mA
IZ=1mA
0
6
8
10
12
14
16
18
20
25
50
75
100
125
150
VZ, NOMINAL ZENER VOLTAGE (V)
AMBIENT TEMPERATURE Ta (℃)
3
H
igh Diode Semiconductor
SOD323 Package Outline Dimensions
SOD323 Suggested Pad Layout
JSHD
JSHD
4
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD323
2.9
1.46
1.25
5
H
igh Diode Semiconductor
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