BZT52C30W [HDSEMI]
SOD 123 Plastic-Encapsulate Diodes;
| 型号： | BZT52C30W |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOD 123 Plastic-Encapsulate Diodes |
| 文件： | 总5页 (文件大小：1727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZ T52C2V4W THRU BZ T52C75W
SOD123 Plastic-Encapsulate Diodes
Zener Diodes
Features
SOD1 23
●
Pd
500mW
2.4V- 75V
●Vz
Applications
● Stabilizing Voltage
Item
Power dissipation
Zener current
Unit
mW
mA
Conditions
Max
500
P
Symbol
Pd
TA=25℃
IZ
/VZ
Tj
Maximum junction temperature
Storage temperature range
℃
℃
150
Tstg
-65 to +150
Electrical Characteristics（T =25℃ Unless otherwise specified）
a
Item
Symbol Unit
Conditions
Max
Thermal resistance
RθJA
VF
℃/W
Between junction and ambient
340
Forward voltage
V
IF =10mA
0.9
1
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Reverse Leakage
Current
Zener Voltage Range 1)
Dynamic Impedance
Marking
Code
Type
Vznom
VZT
V
at IZT
mA
ZZT
at IZT
mA
ZZK
at IZK
mA
IR
at VR
V
V
Max. (Ω)
Max. (Ω)
Max. (μA)
BZT52C2V4W
BZT52C2V7W
BZT52C3V0W
BZT52C3V3W
BZT52C3V6W
BZT52C3V9W
BZT52C4V3W
BZT52C4V7W
BZT52C5V1W
BZT52C5V6W
BZT52C6V2W
BZT52C6V8W
BZT52C7V5W
BZT52C8V2W
BZT52C9V1W
BZT52C10W
BZT52C11W
BZT52C12W
BZT52C13W
BZT52C15W
BZT52C16W
BZT52C18W
BZT52C20W
BZT52C22W
BZT52C24W
BZT52C27W
BZT52C30W
BZT52C33W
BZT52C36W
BZT52C39W
BZT52C43W
BZT52C47W
BZT52C51W
BZT52C56W
BZT52C62W
BZT52C68W
MH
MJ
MK
MM
MN
MP
MR
MX
MY
MZ
NA
NB
NC
ND
NE
NF
NH
NJ
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.2...2.6
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
5
5
100
100
95
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
600
600
600
600
600
600
600
500
480
400
150
80
1
1
50
20
10
5
1
1
5
1
1
5
95
1
1
5
90
1
5
1
5
90
1
3
1
5
90
1
3
1
4.4...5
5
80
1
3
2
4.8...5.4
5.2...6
5
60
1
2
2
5
40
1
1
2
5.8...6.6
6.4...7.2
7...7.9
5
10
1
3
4
5
15
1
2
4
5
15
80
1
1
5
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
5
15
80
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
5
5
15
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
500
500
500
500
500
500
500
1
6
5
20
1
7
11
5
20
1
8
12
5
25
1
8
NK
NM
NN
NP
NR
NX
NY
NZ
PA
PB
PC
PD
6A
13
5
30
1
8
15
5
30
1
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
33
36
39
43
47
52
57
16
5
40
1
18
5
45
1
20
5
55
1
22
5
55
1
24
5
70
1
27
2
80
0.5
0.5
0.5
0.5
0.5
1
30
2
80
33
31...35
2
80
36
34...38
2
90
39
37...41
2
130
130
150
180
180
200
250
300
43
40...46
2.5
2.5
2.5
2.5
2.5
2.5
2.5
6B
47
44...50
1
2
6C
6D
6E
51
48...54
1
1
56
52...60
1
1
62
58...66
1
0.2
0.2
0.2
6F
68
64...72
1
BZT52C75W
6H
75
70...79
1
1)
V
ZT
is tested with pulses (20 ms).
2
H
igh Diode Semiconductor
Typical Characteristics
Breakdown characteristics
Tj = constant (pulsed)
mA
50
Tj=25o
C
3V9
2V7
6V8
4V7
3V3
Iz
40
8V2
5V6
30
20
10
0
Test current Iz
5mA
V
10
0
1
2
3
4
5
6
Vz
7
8
9
Breakdown characteristics
Tj = constant (pulsed)
mA
30
20
10
10
Tj=25o
C
12
Iz
15
18
22
27
Test current Iz
5mA
33
0
V
40
0
10
20
30
Vz
600
500
400
300
200
100
0
0
25
100
Ambient Temperature: Ta ( C)
Power Dissipation vs Ambient Temperature
125
50
75
150
O
3
H
igh Diode Semiconductor
SOD-123 Package Outline Dimensions
SOD-123 Suggested Pad Layout
JSHD
JSHD
4
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD123
1.50
5
H
igh Diode Semiconductor
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