CP3100SC [HDSEMI]

SMB Plastic-Encapsulate Diodes;


型号：	CP3100SC
厂家：	Jiangsu High diode Semiconductor Co., Ltd
描述：	SMB Plastic-Encapsulate Diodes
文件：	总5页 (文件大小：1369K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CPxxxxSC Series

SMB Plastic-Encapsulate Diodes

Thyristor Surge Suppressors

Features

● Low switching voltage

SMB

●

Low on-state voltage

Does not degrade surge capability after multiple surge

Events within limit

●

Fails short circuit when surged in excess of ratings

● Low Capacitance

Applications

●

Protect circuit

Parameter

Symbol

T_stg

Value

-60 to +150

-40 to +150

100

Unit

℃

Storage temperature range

Operating junction temperature range

Repetitive peak pulse current

T_j

℃

I_PP

Symbol

V_DRM

I_DRM

V_S

Parameter

Peak off-state voltage

Off-state current

V-I Curve

I^T

I^S

I^H

Switching voltage

Switching current

On-state voltage

On-state current

I^DRM

I_S

-V

V_T

V^T

V^DRMV^S

I_T

I_H

Holding current

-I

C_O

Off-state capacitance

igh Diode Semiconductor

Electrical Characteristics

①

②

_DRM@V_DRM

V_S@I_S

V_T@ I_T

I_H

C_O

Part

μA

min

Marking

Number

max

max max max

max

CP0080SC

CP0220SC

CP0300SC

CP0640SC

CP0720SC

CP0900SC

CP1100SC

CP1300SC

CP1500SC

CP1800SC

CP2300SC

CP2600SC

CP3100SC

CP3500SC

CP3800SC

800

2.2

CP-8C

CP22C

CP03C

CP06C

CP07C

CP09C

CP11C

CP13C

CP15C

CP18C

CP23C

CP26C

CP31C

CP35C

CP38C

120

130

160

180

220

260

300

350

400

450

120

140

170

190

220

275

320

340

① Vs is measured at 100KV/s

② Off-state capacitance is measured in V_DC=2V, V_RMS=1V, f=1MHz

Surge Ratings

I_PP(A) min

Series

2×10us

500

8×20us

400

10×360us

175

10×1000us

100

igh Diode Semiconductor

Typical Characteristics

FIG.1: tr × td pulse waveform

FIG.2: Reflow condition

%I^PP

tr = rise time to peak value

td = decay time to half value

Critical Zone

to T

Ramp-up

Peak value

100

t_L

S(max)

Ramp-down

Half value

Preheat

S(min)

t(μs)

time to peak temperatue

Time

(t 25℃ to peak)

FIG.3: Normalized Vs change vs. junction

temperature

FIG.4: Normalized DC holding current vs. case

temperature

Percent of Vs change(%)

I^H(T^j)/I^H(T^j=25℃)

2.0

1.8

1.6

1.4

1.2

25℃

1.0

0.8

-4

-8

0.6

0.4

T^j(℃)

40 60 80 100 120 140 160

T^C(℃)

40 60 80 100 120 140 160

-40 -20

igh Diode Semiconductor

SMB

0.155(3.94)

0.130(3.30)

0.087 (2.20)

0.071 (1.80)

0.180(4.57)

0.160(4.06)

0.012(0.305)

0.006(0.152)

0.096(2.44)

0.084(2.13)

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

0.220(5.59)

0.205(5.21)

Dimensions in inches and (millimeters)

SMB

4.26

1.8

JSHD

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Reel Taping Specifications For Surface Mount Devices-SMB

igh Diode Semiconductor

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