HD16-J [HDSEMI]
SMAJ Plastic-Encapsulate Diodes;![HD16-J](http://pdffile.icpdf.com/pdf2/p00347/img/icpdf/HD16-J_2135736_icpdf.jpg)
型号: | HD16-J |
厂家: | ![]() |
描述: | SMAJ Plastic-Encapsulate Diodes |
文件: | 总4页 (文件大小:1234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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HD16 THRU HD20
SMAJ Plastic-Encapsulate Diodes
Features
●I
1A
1600V-2000V
●High surge current capability
o
SMAJ
●VRRM
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● HDXX
:
XX From 16 To 20
H D20
H D18
H D16
Item
Symbol Unit
Conditions
VRRM
V
1600
1800
2000
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
V
1120
1260
1400
V
RMS
60HZ Half-sine wave,
Resistance load,Ta=50℃
Average Forward Current
IF(AV)
A
A
1
Surge(Non-repetitive)Forward
Current
60HZ Half-sine wave,1
cycle,Ta=25℃
IFSM
30
Tj
℃
℃
-55~+125
Junction Temperature
Storage Temperature
Tstg
-55 ~ +150
Symbol
Item
IFM=2.0A
Peak Forward Voltage
I
I
Thermal
Resistance(Typical)
l
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
︶
FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
FIG.1: FORWARD CURRENT DERATING CURVE
1. 0
0. 8
0. 6
0. 4
0. 2
30
24
8.3ms Single Half Sine Wave
JEDEC Method
18
12
S
ingle Phase
Half Wave 60HZ
Resisteve or
Inductive Load
0.375''(9.5mm)
Lead Length
6
0
0
100
50
150
1
2
10
20
100
Ta(℃)
Number of Cycles
FIG.3:TYPICAL REVERSE CHARACTERISTICS
1000
100
Tj=125℃
10
Tj=100℃
Tj=25℃
1.0
0.1
0.01
0
20
40
60
80
100
Voltage(%)
2
H
igh Diode Semiconductor
SMAJ
0.067 (1.70)
0.047 (1.20)
0.110(2.80)
0.098(2.50)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
Dimensions in inches and (millimeters)
SMAJ
4.12
1.8
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices- SMA
4
H
igh Diode Semiconductor
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