HD1750FX [STMICROELECTRONICS]
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS; 高压NPN功率晶体管高清晰度和新的超薄CRT显示器
| 型号： | HD1750FX |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS |
| 文件： | 总8页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HD1750FX
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH
DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS
■ STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR "ENHANCED
GENERATION" EHVS1
Figure 1: Package
■
■
■
WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
FULLY INSULATED POWER PACKAGE U.L.
COMPLIANT
APPLICATIONS
ISOWATT218FX
■ HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV AND HIGH-END
MONITORS
Figure 2: Internal Schematic Diagram
DESCRIPTION
The device is manufactured using Diffused
Collector in Planar technology adopting "Enhance
High Voltage Structure" (EHVS1) developed to fit
High-Definition CRT displays.
The new HD product series show improved silicon
efficiency bringing updated performance to the
Horizontal Deflection stage.
Table 1: Order Codes
Part Number
Marking
Package
Packaging
HD1750FX
HD1750FX
ISOWATT218FX
TUBE
Rev. 2
December 2005
1/8
HD1750FX
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Collector-Emitter Voltage (V = 0)
1700
800
10
V
V
V
A
A
A
A
W
CES
BE
V
Collector-Emitter Voltage (I = 0)
CEO
B
V
Emitter-Base Voltage (I = 0)
EBO
C
I
Collector Current
24
C
I
Collector Peak Current (t < 5ms)
36
CM
p
I
Base Current
12
B
I
Base Peak Current (t < 5ms)
18
BM
p
o
P
75
Total Dissipation at T = 25 C
tot
C
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
V
2500
V
ins
T
Storage Temperature
-65 to 150
150
°C
°C
stg
T
Max. Operating Junction Temperature
J
Table 3: Thermal Data
o
R
Thermal Resistance Junction-Case
Max
1.67
thj-case
C/W
o
Table 4: Electrical Characteristics (T
= 25 C unless otherwise specified)
case
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Collector Cut-off Current V = 1700 V
0.2
2
mA
mA
CES
CE
(V = 0)
o
BE
V
V
= 1700 V
= 5 V
T = 125 C
C
CE
I
Emitter Cut-off Current
10
µA
EBO
EB
(I = 0)
C
V
*
Collector-Emitter
Sustaining Voltage
I
= 10 mA
800
10
V
CEO(sus)
C
(I = 0 )
B
V
Emitter-Base Voltage
I
I
= 10 mA
= 12 A
V
EBO
E
(I = 0 )
C
V
*
*
Collector-Emitter
Saturation Voltage
I = 3 A
3
V
V
CE(sat)
C
B
V
Base-Emitter Saturation I = 12 A
Voltage
I = 3 A
0.95
30
1.5
BE(sat)
C
B
h
DC Current Gain
I
I
I
I
= 1 A
V
V
= 5 V
= 5 V
FE
C
CE
CE
6.5
9.5
= 12 A
= 12 A
C
C
INDUCTIVE LOAD
Storage Time
Fall Time
f = 31250 Hz
h
t
3.1
3.8
µs
ns
s
= 1.9 A
I
= -8.1 A
B(off)
B(on)
t
350
500
f
V
= 1320 V
V
= -2.7 V
BE(off)
CE(fly)
BB(off)
L
= 0.8 µH
INDUCTIVE LOAD
Storage Time
Fall Time
I
I
= 6.5 A
f = 100 kHz
h
C
t
1.7
2
µs
ns
s
= 1.2 A
I
= -5.85 A
B(off)
B(on)
t
180
250
f
V
= 1220 V
V
= -2.7 V
BE(off)
CE(fly)
L
= 0.25 µH
BB(off)
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
2/8
HD1750FX
Figure 3: Safe Operating Area
Figure 4: Output Chatacterisctics
Figure 5: DC Current Gain
Figure 6: Derating Curve
Figure 7: Reverse Biased SOA
Figure 8: DC Current Gain
3/8
HD1750FX
Figure 9: Collector-Emitter Saturation Voltage
Figure 12: Base-Emitter Saturation Voltage
Figure 10: Power Losses
Figure 13: Power Losses
Figure 11: Inductive Load Switching Time
Figure 14: Inductive Load Switching Time
4/8
HD1750FX
Figure 15: Power Losses and Inductive Load Switching Test Circuit
Figure 16: Reverse Biased Safe Operating Area Test Circuit
5/8
HD1750FX
ISOWATT218FX MECHANICAL DATA
mm.
DIM.
MIN.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
TYP
MAX.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
A
C
D
D1
E
F
F2
G
G1
H
5.45
15.30
9
15.70
10.20
23.20
26.70
44.40
4.70
L
L2
L3
L4
L5
L6
L7
N
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
24.70
15
2.20
R
4.20
Dia
3.80
7627132 B
6/8
HD1750FX
Figure 5: Revision History
Release Date
30-May-2005
19-Dec-2005
Version
Change Designator
1
2
Initial Release.
New h value in table 4
FE
7/8
HD1750FX
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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