HD2312 [HDSEMI]

Plastic-Encapsulate MOSFET;


型号：	HD2312
厂家：	Jiangsu High diode Semiconductor Co., Ltd
描述：	Plastic-Encapsulate MOSFET
文件：	总5页 (文件大小：1990K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HD2312

SOT-23 Plastic-Encapsulate MOSFET

N -Channel MOSFET

roduct Summary

I_D

SOT- 23

V_(BR)DSS

R_DS(on)MAX

4.5V

31.8m

35.6mΩ 2.5V

41.4mΩ 1.8V

Features

●

TrenchFET Power MOSFET

●

Excellent R_DS(on)and Low Gate Charge

Applications

● DC/DC Converters

Load Switching for Portable Applications

●

Marking:

●

S12

Symbol

Unit

Parameter

Value

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

±8.0

Continuous Drain Current

t=5s

Pulsed Drain Current

I_DM

I_S

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

1.04

0.35

357

P_D

R_θJA

T_J

℃/W

150

℃

Storage Temperature

T_stg

-50 ~+150

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Electrical Characteristics (T =25 unless otherwise noted)

℃

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

Gate-source leakage

V^{(BR) DSS}

I_GSS

V^GS= 0V, I^D=250µA

V^DS=0V, V^GS=±8V

V^DS=20V, V^GS=0V

V^DS=V_GS, I^D=250µA

V^GS=4.5V, I^D=5.0A

V^GS=2.5V, I^D=4.7A

V^GS=1.8V, I^D=4.3A

V^DS=10V, I^D=5.0A

µA

±100

1.0

Zero gate voltage drain current

Gate-source threshold voltage

I_DSS

V^GS(th)

0.45

0.7

1.0

0.018 0.0318

0.023 0.0356

0.030 0.0414

Drain-source on-state resistance^a

R^{DS (on)}

Ω

Forward tranconductance^a

Dynamic^b

g^fS

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

C_iss

C_oss

C_rss

R^g

865

105

V^DS=10V,V^GS=0V,f =1MHz

f =1MHz

0.5

4.8

Ω

Turn-on delay Time

Rise time

t^d(on)

t^r

t^d(off)

t^f

V_GEN=5V,V_DD=10V,

I^D=4A,R_G=1ꢀ, R_L=2.2ꢀ

Turn-off Delay time

Fall yime

Drain-source body diode characteristics

Forward diode voltage

1.2

V_SD

V^GS=0V,I_S=4A

0.75

Notes :

a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%.

b. These parameters have no way to verify.

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Typical Characteristics

Output Characteristics

Transfer Characteristics

T_a=25℃

V_GS=3V,4V,5V,6V

V_DS=3V

Pulsed

18 Pulsed

T_a=25℃

T_a=100℃

V_GS=2V

V_GS=1.5V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

1.8

0.0

0.5

1.0

1.5

2.0

2.5

3.0

DRAIN TO SOURCE VOLTAGE V_DS(V)

GATE TO SOURCE VOLTAGE V_GS(V)

R_DS(ON)V_GS

——

R_DS(ON)

I_D

——

150

100

Pulsed

T_a=25℃

Pulsed

I_D=5A

V_GS=1.8V

V_GS=2.5V

T_a=100℃

V_GS=4.5V

T_a=25℃

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

DRAIN CURRENT I_D(A)

GATE TO SOURCE VOLTAGE V_GS(V)

Threshold Voltage

I_S——

V_SD

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Pulsed

I_D=250uA

T_a=100℃

T_a=25℃

0.1

0.01

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

125

SOURCE TO DRAIN VOLTAGE V_SD(V)

JUNCTION TEMPERATURE T_j(℃)

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SOT-23 Package Outline Dimensions

SOT-23 Suggested Pad Layout

JSHD

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Reel Taping Specifications For Surface Mount Devices-SOT-23

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