S3AF [HDSEMI]
SMAF Plastic-Encapsulate Diodes;
| 型号： | S3AF |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMAF Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S3AF THRU S3MF
HD AF80
SMAF Plastic-Encapsulate Diodes
Features
●I
3A
50V-1000V
●High surge current capability
o
SMAF
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● S3AF-S3MF : S3A-S3M
S3
BF DF GF JF KF
Symbol
Unit
Item
AF
MF
50
100 200 400 600 800 1000
I
35
70 140 280 420
560 700
Maximum RMS Voltage
V
V
RMS
60Hz Half-sine wave, Resistance
load, TL=110℃
3.0
IF(AV)
60Hz Half-sine wave,1 cycle,
Ta=25℃
IFSM
100
Symbol
Item
IFM=3.0A
Peak Forward Voltage
1.1
5
I
125
125
I
50
Thermal
Resistance(Typical)
l
16
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
10
8.3ms Single Half Sine Wave
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
50
70
90
110
130
150
TL(℃)
1
10
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
Pulse width=300us
1% Duty Cycle
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
100
10
Tj=125℃
10
1.0
0.1
0.01
1.0
0.1
Tj=25℃
0
20
40
60
80
100
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
VF(V)
Voltage(%)
2
H
igh Diode Semiconductor
SMAF
.193(4.90)
.173(4.40)
.047(1.20)
.035(0.90)
.146(3.70)
.130(3.30)
.063(1.60)
.051(1.30)
.106(2.70)
.094(2.40)
.009(0.23)
.007(0.18)
.051(1.30)
.039(1.00)
Dimensions in inches and (millimeters)
SMAF
4.65
0.55
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices- SMAF
4
H
igh Diode Semiconductor
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