SS345F [HDSEMI]

SMAF Plastic-Encapsulate Diodes;
SS345F
型号: SS345F
厂家: Jiangsu High diode Semiconductor Co., Ltd    Jiangsu High diode Semiconductor Co., Ltd
描述:

SMAF Plastic-Encapsulate Diodes

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中文:  中文翻译
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HD AF50  
SS345F  
SMAF Plastic-Encapsulate Diodes  
Features  
I  
3A  
o
SMAF  
VRRM  
45V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
SS345F : SS345  
SS345F  
Item  
Symbol Unit  
Test Conditions  
Repetitive Peak Reverse Voltage  
VRRM  
V
45  
Maximum RMS Voltage  
V
V
RMS  
31.5  
3.0  
60HZ Half-sine wave, Resistance  
load, TL(Fig.1)  
Average Forward Current  
IF(AV)  
A
A
Surge(Non-repetitive)Forward  
Current  
IFSM  
70  
60Hz Half-sine wave ,1 cycle ,  
Ta =25  
Junction Temperature  
Storage Temperature  
TJ  
-55~+150  
TSTG  
-55 ~ +150  
Electrical Characteristics (T =25Unless otherwise specified  
a
Item  
Symbol Unit  
Test Condition  
SS345F  
VF  
V
IF =3.0A  
0.55  
Peak Forward Voltage  
Peak Reverse Current  
IRRM1  
T =25  
0.5  
40  
a
mA  
VRM=VRRM  
IRRM2  
T =125℃  
a
551)  
171)  
Rθ  
Between junction and ambient  
Between junction and terminal  
J-A  
/  
W
Thermal  
Resistance(Typical)  
Rθ  
J-L  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper  
pad areas  
1
H
igh Diode Semiconductor  
Typical Characteristics  
FIG.1: FORWARD CURRENT DERATING CURVE  
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
90  
80  
70  
60  
50  
40  
8.3ms Single Half Sine Wave  
JEDEC Method  
Resistive or Inductive Load  
P.C.B. Mounted on 0.2"×0.2"  
(5mm×5mm)Copper Pad Areas  
1
2
10  
20  
100  
0
25  
50  
75  
100  
125  
150  
Number of Cycles  
TL()  
FIG.3: TYPICAL FORWARD CHARACTERISTICS  
TJ=25℃  
Pulse width=300us  
1% Duty Cycle  
FIG.4  
TYPICAL REVERSE CHARACTERISTICS  
100  
100  
10  
= 150 °C  
TA  
10  
= 125 °C  
TA  
1
1.0  
0.1  
0.01  
0.1  
TA = 25 °C  
0.01  
0.001  
0.0001  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Voltage(%)  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VF(V)  
2
H
igh Diode Semiconductor  
SMAF  
.193(4.90)  
.173(4.40)  
.047(1.20)  
.035(0.90)  
.146(3.70)  
.130(3.30)  
.063(1.60)  
.051(1.30)  
.106(2.70)  
.094(2.40)  
.009(0.23)  
.007(0.18)  
.051(1.30)  
.039(1.00)  
Dimensions in inches and (millimeters)  
SMAF  
4.65  
0.55  
JSHD  
JSHD  
3
H
igh Diode Semiconductor  
Reel Taping Specifications For Surface Mount Devices- SMAF  
4
H
igh Diode Semiconductor  

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