2SD668D [HITACHI]
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN;
| 型号： | 2SD668D |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN 放大器 晶体管 |
| 文件： | 总5页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD668, 2SD668A
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SB648/A
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
VCBO
VCEO
VEBO
IC
2SD668
2SD668A
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
180
180
120
160
V
5
5
V
50
50
mA
mA
W
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
IC(peak)
PC
100
100
1
1
Tj
150
150
°C
°C
Tstg
–55 to +150
–55 to +150
2SD668, 2SD668A
Electrical Characteristics
(Ta = 25°C)
2SD668
2SD668A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
180
120
5
—
—
—
—
—
—
10
180
160
5
—
—
—
—
—
—
V
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Collector to emitter
breakdown voltage
V
Emitter to base
breakdown voltage
V
Collector cutoff current ICBO
—
—
—
—
—
—
10
µA
VCB = 160 V, IE = 0
1
DC current transfer
ratio
hFE1
*
60
320 60
200
VCE = 5 V, IC = 10 mA
hFE2
30
—
—
—
—
2
30
—
—
—
—
2
VCE = 5 V, IC = 1 mA
IC = 30 mA, IB = 3 mA
Collector to emitter
saturation voltage
VCE(sat)
V
V
Base to emitter voltage VBE
Gain bandwidth product fT
—
—
—
—
1.5
—
—
—
—
—
1.5
—
VCE = 5 V, IC = 10 mA
140
3.5
140
3.5
MHz VCE = 10 V, IC = 10 mA
Collector output
capacitance
Cob
—
—
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SD668 and 2SD668A are grouped by hFE1 as follows.
B
C
D
2SD668
60 to 120
60 to 120
100 to 200 160 to 320
100 to 200
2SD668A
—
2
2SD668, 2SD668A
Maximum Collector Dissipation Curve
1.5
1.0
0.5
0
50
100
150
Ambient temperature Ta (°C)
Typical Output Characteristics
20
100
90
80
70
60
50
40
30
16
12
8
20
4
10 µA
IB = 0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
Typical Transfer Characteristics
100
VCE = 5 V
30
10
3
1
0
0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
DC Current Transfer Ratio
vs. Collector Current
280
Ta = 75°C
VCE = 5 V
240
200
160
120
80
25
–25
40
0.5 1.0
2
5
10
20
50
Collector current IC (mA)
3
2SD668, 2SD668A
Saturation Voltage vs. Collector Current
lC = 10 lB
1.2
1.0
0.8
0.6
0.4
0.2
0
0.24
0.20
0.16
0.12
0.08
0.04
0
VBE (sat)
VCE (sat)
25
–0.1
Collector current IC (mA)
Gain Bandwidth Product
vs. Collector Current
500
VCE = 10 V
200
100
50
20
10
1
2
5
10
20
50
Collector current IC (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
50
f = 1 MHz
IE = 0
20
10
5
2
1.0
0.5
1
2
5
10
20
50 100
Collector to base voltage VCB (V)
4
2SD668, 2SD668A
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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U S A
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5
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