2SK2885L [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK2885L |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-545 A
2nd. Edition
Features
•
Low on-resistance
RDS(on) = 10mΩ typ.
•
•
4V gate drive devices.
High speed switching
Outline
LDPAK
4
4
D
1
2
3
1
2
3
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SK2885(L), 2SK2885(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
30
VGSS
±20
V
ID
45
A
1
Drain peak current
ID(pulse)
*
180
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
45
A
Pch*2
Tch
75
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2
2SK2885(L), 2SK2885(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
ID = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
IDSS
±20
—
—
—
V
IG = ±100µA, VDS = 0
Zero gate voltege drain
current
—
10
µA
VDS = 30 V, VGS = 0
Gate to source leak current
IGSS
—
1.0
—
—
20
—
—
—
—
—
—
—
—
—
±10
2.0
14
25
—
—
—
—
—
—
—
—
—
µA
V
VGS = ±16V, VDS = 0
ID = 1mA, VDS = 10V
ID = 20A, VGS = 10V*1
ID = 20A, VGS = 4V*1
ID = 20A, VDS = 10V*1
VDS = 10V
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
—
10
mΩ
mΩ
S
resistance
RDS(on)
15
Forward transfer admittance |yfs|
30
Input capacitance
Output capacitance
Ciss
1570
1100
410
32
pF
pF
pF
ns
ns
ns
ns
V
Coss
VGS = 0
Reverse transfer capacitance Crss
f = 1MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VGS = 10V, ID = 20A
RL = 0.5Ω
300
180
200
1.0
Turn-off delay time
Fall time
Body to drain diode forward
voltage
VDF
IF = 45A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
75
—
ns
IF = 45A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
See characteristics curves of 2SK2737
3
2SK2885(L), 2SK2885(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
75
1000
300
100
10 µs
30
10
3
50
Operation in
this area is
limited by R
DS(on)
1
25
0.3
0.1
Ta = 25°C
1 shot pulse
0
3
Drain to Source Voltage
30
50
100
150
200
0.1 0.3
1
10
100
V
(V)
DS
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.67 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
4
2SK2885(L), 2SK2885(S)
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50Ω
= 10 V
90%
td(off)
td(on)
t
f
tr
5
2SK2885(L), 2SK2885(S)
Package Dimensions
Unit: mm
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.2
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.2
2.59 ± 0.2
1.27 ± 0.2
0.76 ± 0.1
1.2 ± 0.2
+0.2
0.86
–0.1
+0.2
–0.1
0.1
2.59 ± 0.2
1.27 ± 0.2
0.4 ± 0.1
+0.2
–0.1
1.2 ± 0.2
0.4 ± 0.1
0.86
2.54 ± 0.5
2.54 ± 0.5
2.54 ± 0.5
2.54 ± 0.5
L type
S type
LDPAK
Hitachi Code
EIAJ
—
—
JEDEC
6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
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For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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