2SK359TZ [HITACHI]
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, TO-92;型号: | 2SK359TZ |
厂家: | HITACHI SEMICONDUCTOR |
描述: | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, TO-92 |
文件: | 总7页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK359
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
TO-92 (2)
1. Gate
2. Source
3. Drain
3
2
1
2SK359
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
V
1
Drain to source voltage
Gate to source voltage
Drain current
VDSX
VGSS
ID
*
20
±5
V
30
mA
mA
mW
°C
Gate current
IG
±1
Channel power dissipation
Channel temperature
Storage temperature
Note: 1. VGS = –4 V
Pch
Tch
Tstg
400
150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
20
—
—
V
ID = 100 µA, VGS = –4 V
Gate cutoff current
IGSS
—
4
—
—
—
14
±20
12
nA
mA
V
VGS = ±5 V, VDS = 0
VDS = 10 V, VGS = 0
VDS = 10 V, ID = 10 µA
1
Drain current
IDSS*
Gate to source cutoff voltage
Forward transfer admittance
VGS(off)
0
–2.0
—
8
mS
VDS = 10 V, VGS = 0,
f = 1 kHz
yfs
Input capacitance
Output capacitance
Ciss
—
2.5
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Coss
—
—
—
1.6
0.03
30
—
—
—
pF
pF
dB
Reverse transfer capacitance Crss
Power gain
PG
VDS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
2
—
dB
Note: 1. The 2SK359 is grouped by IDSS as follows.
D
E
F
4 to 8
6 to 10
8 to 12
2
2SK359
Typical Output Characteristics
Maximum Channel Dissipation Curve
10
8
600
400
200
6
4
2
2
4
6
8
10
0
50
100
150
0
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Forward Transfer Admittance vs.
Drain to Source Voltage
Typical Transfer Characteristics
10.0
8.0
6.0
4.0
2.0
20
VDS = 10 V
16
12
8
F
E
D
VGS = 0
f = 1 kHz
4
0
–2.0
2
4
6
8
10
–1.6
–1.2
–0.8
–0.4
0
0
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
3
2SK359
Input Capacitance vs.
Drain to Source Voltage
Forward Transfer Admittance vs.
Drain Current
20
100
50
VDS = 10 V
f = 1 kHz
VGS = 0
f = 1 MHz
10
5
20
10
5
2
1.0
0.5
2
1
0.5
1.0
2
5
10
20
0.2
0.5 1.0
2
5
10
20
Drain to Source Voltage VDS (V)
Drain Current ID (mA)
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
0.5
20
10
5
VGS = 0
f = 1 MHz
VGS = 0
f = 1 MHz
0.2
0.1
0.05
2
1.0
0.5
0.02
0.01
0.5
1.0
2
5
10
20
0.5
1.0
2
5
10
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
4
2SK359
Power Gain, Noise Figure vs.
Drain to Source Voltage
35
PG
30
25
20
15
10
5
f = 100 MHz
6
4
2
0
NF
6
0
2
4
8
10
12
Drain to Source Voltage VDS (V)
5
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (2)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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