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BIC702C [HITACHI]

Bias Controlled Monolithic IC VHF/UHF RF Amplifier; 偏置控制单片集成电路VHF / UHF射频放大器
BIC702C
型号： BIC702C
厂家： HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述：

Bias Controlled Monolithic IC VHF/UHF RF Amplifier
偏置控制单片集成电路VHF / UHF射频放大器

射频放大器
文件： 总11页 (文件大小：68K)
中文：  中文翻译
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BIC702C  
Bias Controlled Monolithic IC  
VHF/UHF RF Amplifier  
ADE-208-814D (Z)  
5th. Edition  
Mar. 2001  
Features  
•
•
•
•
•
Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);  
To reduce using parts cost & PC board space.  
High |yfs| ;  
|yfs| = 29 mS typ. ( f = 1kHz)  
Low noise;  
NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)  
Withstanding to ESD;  
Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions.  
Provide mini mold package; CMPAK-4 (SOT-343mod)  
Outline  
CMPAK-4  
2
3
1
4
1. Source  
2. Gate1  
3. Gate2  
4. Drain  
Notes:  
1. Marking is “BZ–”.  
2. BIC702C is individual type number of HITACHI BICMIC.  
BIC702C  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate1 to source voltage  
6
VG1S  
+6  
–0  
V
Gate2 to source voltage  
VG2S  
+6  
–0  
V
Drain current  
ID  
30  
mA  
mW  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
Tstg  
100  
150  
–55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
6
—
—
—
—
V
V
V
ID = 200µA  
V
G2S = 0,VG1 = open  
Gate1 to source breakdown V(BR)G1SS  
voltage  
+6  
+6  
—
—
IG1 =+10µA, VG2S = VDS = 0  
IG2 = +10µA, VG1S = VDS = 0  
VG2S = +5V, VG1S = VDS = 0  
Gate2 to source breakdown V(BR)G2SS  
voltage  
Gate2 to source cutoff current IG2SS  
Gate2 to source cutoff voltage VG2S(off)  
—
—
+100  
1.0  
nA  
V
0.5  
0.7  
VDS = 5V, ID = 100µA  
VG1 = open  
Drain current  
ID(op)  
10  
24  
13  
29  
16  
34  
mA  
mS  
VDS = 5V , VG2S = 4V  
VG1 = open  
Forward transfer admittance |yfs|  
VDS = 5V, ID = 13mA  
VG2S =4V, f = 1kHz  
Input capacitance  
Output capacitance  
ciss  
1.6  
0.7  
—
2.0  
2.3  
1.5  
0.05  
—
pF  
pF  
pF  
dB  
VDS = 5V, VG2S =4V  
VG1 = open  
coss  
1.1  
Reverse transfer capacitance crss  
0.02  
28.5  
f = 1MHz  
Power gain  
PG1  
24  
VDS = 5V, VG2S =4V  
VG1 = open  
Noise figure  
Power gain  
NF1  
PG2  
—
1.0  
23  
1.5  
—
dB  
dB  
f = 200MHz  
18  
VDS = 5V, VG2S =4V  
VG1 = open  
Noise figure  
NF2  
—
1.6  
2.2  
dB  
f = 900MHz  
2
BIC702C  
Test Circuits  
• DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)  
V
G1  
V
G2  
Open  
Gate 1  
Source  
Gate 2  
Drain  
A
I
D
• 200 MHz Power Gain, Noise Figure Test Circuit  
V
V
G2  
V
T
T
1000p  
1000p  
1000p  
47k  
BICMIC  
47k  
1000p  
1SV70  
Output(50Ω)  
47k  
L1  
1000p  
L2  
Input(50Ω)  
10p max  
1000p  
1000p  
RFC  
1SV70  
36p  
1000p  
Unit: : Resistance (Ω)  
V
D
Capacitance (F)  
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns  
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns  
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns  
3
BIC702C  
• 900 MHz Power Gain, Noise Figure Test Circuit  
V
V
D
G2  
C5  
C4  
R1  
C3  
R2  
RFC  
D
Output  
G2  
G1  
L4  
L3  
Input  
S
L1  
L2  
C1  
C2  
: Variable Capacitor (10pF MAX)  
: Disk Capacitor (1000pF)  
: Air Capacitor (1000pF)  
: 47 kΩ  
C1, C2  
C3  
C4, C5  
R1  
: 4.7 kΩ  
R2  
L2:  
L1:  
10  
26  
(φ1mm Copper wire)  
Unit : mm  
21  
29  
L4:  
18  
L3:  
RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm  
4
BIC702C  
Maximum Channel Power  
Dissipation Curve  
Power Gain vs.  
Gate2 to Source Voltage  
200  
150  
100  
50  
30  
25  
20  
15  
10  
5
V
V
= 5 V  
= open  
DS  
G1  
f = 200 MHz  
4
3
0
0
50  
100  
150  
200  
1
2
Ambient Temperature Ta (°C)  
Gate2 to Source Voltage V  
(V)  
G2S  
Noise Figure vs.  
Gate2 to Source Voltage  
Power Gain vs.  
Gate2 to Source Voltage  
5
4
3
2
1
0
30  
25  
20  
15  
10  
5
V
V
= 5 V  
= open  
DS  
G1  
f = 200 MHz  
V
V
= 5 V  
= open  
DS  
G1  
f = 900 MHz  
0
1
4
1
4
2
3
2
3
Gate2 to Source Voltage V  
(V)  
Gate2 to Source Voltage V  
(V)  
G2S  
G2S  
5
BIC702C  
Power Gain vs.  
Noise Figure vs.  
Gate2 to Source Voltage  
Drain to Source Voltage  
5
4
3
2
1
30  
25  
20  
15  
10  
5
V
V
= 5 V  
= open  
DS  
G1  
f = 900 MHz  
V
G2S  
= 4 V  
V
= open  
G1  
f = 200 MHz  
0
1
0
4
1
2
3
2
3
4
5
6
7
Gate2 to Source Voltage V  
(V)  
Drain to Source Voltage  
V
(V)  
DS  
G2S  
Noise Figure vs.  
Drain to Source Voltage  
Power Gain vs.  
Drain to Source Voltage  
4
3
2
1
0
30  
V
G2S  
= 4 V  
25  
20  
15  
10  
5
V
= open  
G1  
f = 200 MHz  
V
G2S  
= 4 V  
V
= open  
G1  
f = 900 MHz  
0
1
1
2
3
4
5
6
2
3
4
5
6
7
7
Drain to Source Voltage  
V
(V)  
DS  
Drain to Source Voltage  
V
(V)  
DS  
6
BIC702C  
Gain Reduction vs.  
Gate2 to Source Voltage  
Noise Figure vs.  
Drain to Source Voltage  
4
3
2
1
0
10  
20  
30  
40  
50  
V
V
V
= 5 V  
= open  
DS  
G1  
= 4 V  
G2S  
V
V
= 4 V  
= open  
G2S  
G1  
f = 200 MHz  
f = 900 MHz  
0
2
4
3
2
3
4
5
6
1
0
7
Drain to Source Voltage  
V
(V)  
DS  
Gate2 to Source Voltage V  
(V)  
G2S  
Gain Reduction vs.  
Gate2 to Source Voltage  
Input Capacitance vs.  
Gate2 to Source Voltage  
0
10  
20  
30  
40  
50  
4
3
2
1
V
V
V
= 5 V  
= open  
DS  
G1  
V
V
= 4 V  
= open  
DS  
G1  
= 4 V  
G2S  
f = 900 MHz  
f = 1 MHz  
2
4
0
3
1
0
(V)  
1
2
3
4
Gate2 to Source Voltage V  
Gate2 to Source Voltage V  
(V)  
G2S  
G2S  
7
BIC702C  
S21 Parameter vs. Frequency  
S11 Parameter vs. Frequency  
Scale: 1 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
5
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
0
180°  
0°  
-10  
- 5  
- 4  
- .2  
- 30°  
- 150°  
- 3  
- .4  
- 2  
- 60°  
- 120°  
- .6  
- 1.5  
- .8  
- 1  
- 90°  
Test Condition:  
V
V
= 5 V , V  
= open  
Test Condition: V = 5 V , V  
= open  
G1  
G1  
DS  
DS  
= 4 V ,  
V
G2S  
= 4 V ,  
G2S  
Ω
Ω
Zo = 50  
Zo = 50  
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
S12 Parameter vs. Frequency  
S22 Parameter vs. Frequency  
Scale: 0.004/ div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
150°  
4
5
.2  
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
0
180°  
0°  
-10  
- 5  
- 4  
- .2  
- 30°  
- 150°  
- 3  
- .4  
- 2  
- 60°  
- 120°  
- .6  
- 1.5  
- .8  
- 1  
- 90°  
Test Condition: V = 5 V , V  
= open  
G1  
Test Condition:  
DS  
V
V
= 5 V , V  
= open  
G1  
DS  
V
G2S  
= 4 V ,  
= 4 V ,  
G2S  
Ω
Zo = 50  
Ω
Zo = 50  
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
8
BIC702C  
Sparameter (VDS = 5 V, VG2S = 4 V, VG1 = open, Zo = 50 Ω)  
S11  
S21  
MAG  
2.80  
2.78  
2.77  
2.74  
2.72  
2.68  
2.64  
2.60  
2.56  
2.50  
2.46  
2.41  
2.37  
2.31  
2.27  
2.22  
2.18  
2.12  
2.07  
2.04  
S12  
S22  
f (MHz) MAG  
ANG  
-3.3  
ANG  
175.9  
170.9  
166.1  
161.2  
156.5  
151.8  
147.2  
142.7  
138.6  
134.1  
129.8  
125.7  
121.6  
117.8  
113.6  
110.0  
105.8  
102.2  
98.6  
MAG  
ANG  
58.8  
75.7  
75.1  
77.4  
78.2  
80.0  
74.7  
71.7  
73.3  
71.8  
70.7  
69.9  
69.1  
67.8  
70.8  
73.3  
75.2  
75.8  
88.1  
92.7  
MAG  
0.990  
0.992  
0.991  
0.987  
0.985  
0.982  
0.978  
0.973  
0.968  
0.963  
0.958  
0.952  
0.947  
0.942  
0.936  
0.929  
0.924  
0.917  
0.912  
0.906  
ANG  
50  
0.998  
0.993  
0.991  
0.984  
0.978  
0.970  
0.958  
0.954  
0.945  
0.932  
0.920  
0.910  
0.900  
0.887  
0.870  
0.863  
0.853  
0.839  
0.827  
0.819  
0.00106  
0.00171  
0.00253  
0.00356  
0.00442  
0.00485  
0.00576  
0.00642  
0.00689  
0.00712  
0.00765  
0.00804  
0.00798  
0.00787  
0.00785  
0.00758  
0.00721  
0.00694  
0.00716  
0.00667  
-2.4  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
-7.2  
-4.7  
-10.9  
-15.0  
-19.0  
-22.8  
-26.7  
-30.3  
-33.8  
-37.5  
-40.6  
-44.3  
-47.5  
-50.9  
-54.4  
-57.6  
-60.9  
-63.6  
-66.5  
-70.1  
-7.2  
-9.6  
-12.2  
-14.7  
-17.1  
-19.6  
-22.0  
-24.2  
-26.7  
-28.9  
-31.3  
-33.4  
-35.8  
-37.9  
-40.3  
-42.5  
-44.5  
-46.7  
94.9  
9
BIC702C  
Package Dimensions  
As of January, 2001  
Unit: mm  
2.0 ± 0.2  
1.3 ± 0.2  
0.65 0.65  
+ 0.1  
+ 0.1  
+ 0.1  
0.3  
0.3  
0.3  
0.4  
– 0.05  
– 0.05  
0.16  
– 0.06  
0 – 0.1  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.65  
0.6  
1.25 ± 0.2  
Hitachi Code  
JEDEC  
CMPAK-4(T)  
—
EIAJ  
Conforms  
0.006 g  
Mass (reference value)  
10  
BIC702C  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
11  

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