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元器件品牌
H5N2508D(S)-(2)
[HITACHI]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
元器件型号:
H5N2508D(S)-(2)
生产厂家:
HITACHI SEMICONDUCTOR
描述和应用:
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PDF文件:
总12页 (文件大小:56K)
下载文档:
下载PDF数据表文档文件
型号参数:H5N2508D(S)-(2)参数
查看货源
H5N2508DL
Silicon N Channel MOS FET High Speed Power Switching
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15
RENESAS
H5N2508DL
Datasheet|ADE-208-1377|MAR.20.01|58K
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8
ETC
H5N2508DL-E
Silicon N Channel MOS FET High Speed Power Switching
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3
RENESAS
H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
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8
RENESAS
H5N2508DS
Datasheet|ADE-208-1377|MAR.20.01|58K
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4
ETC
H5N2508DS-E
暂无描述
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0
RENESAS
H5N2508DSTL-E
Silicon N Channel MOS FET High Speed Power Switching
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156
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5
RENESAS
H5N2509P
Silicon N Channel MOS FET High Speed Power Switching
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156
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24
RENESAS
H5N2509P
SILICON N CHANNEL MOSFET SWITCHING
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156
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10
HITACHI
H5N2509P
SILICON N CHANNEL MOSFET SWITCHING
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156
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13
HITACHI
H5N2509P-E
Silicon N Channel MOS FET High Speed Power Switching
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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15
RENESAS
H5N2510D(L)-(2)
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
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0
HITACHI
H5N2510DL
Silicon N Channel MOS FET High Speed Power Switching
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: Undefined variable $rtag in
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156
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47
RENESAS
H5N2510DL
Datasheet|ADE-208-1379|MAR.20.01|35K
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14
ETC
H5N2510DL
Power Field-Effect Transistor, 5A I(D), 250V, 0.97ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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0
HITACHI
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