HA13155 [HITACHI]

33 W x 4-Channel BTL Power IC; 33宽x 4通道BTL电源IC


型号：	HA13155
厂家：	HITACHI SEMICONDUCTOR
描述：	33 W x 4-Channel BTL Power IC 33宽x 4通道BTL电源IC 消费电路商用集成电路音频放大器视频放大器局域网
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HA13155

33 W × 4-Channel BTL Power IC

ADE-207-187A (Z)

2nd Edition

Jul. 1999

Description

The HA13155 is four-channel BTL amplifier IC designed for car audio, featuring high output and low

distortion, and applicable to digital audio equipment. It provides 33 W output per channel, with a 13.7 V

power supply and at Max distortion.

Functions

•

4 ch BTL power amplifiers

Built-in standby circuit

Built-in muting circuit

Built-in protection circuit (surge, T.S.D, and ASO)

Features

•

Requires few external parts

Popping noise minimized

Low output noise

Built-in high reliability protection circuit

Pin to pin with HA13150A/HA13151/HA13152/HA13153

HA13155

Block Diagram

C11

0.1 µ/16 V

V_CC

13.2 V

4400 µ/16 V

PV_CC2

PV_CC1

IN V_CC

STBY

IN-1

2.2

0.1 µ

Amp-1

Buffer & Mute-1

Buffer & Mute-2

Buffer & Mute-3

Buffer & Mute-4

R2 C2

2.2 0.1 µ

2.2

IN-2

0.1 µ

Amp-2

Amp-3

Amp-4

R4 C4

2.2 0.1 µ

2.2

IN-3

0.1 µ

R6 C6

2.2 0.1 µ

2.2

IN-4

0.1 µ

MUTE

Protector

(ASO, Surge, TSD)

R8 C8

7.5 k

2.2 0.1 µ

TAB

C10

10 µ/10 V

Unit R: Ω

C: F

C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),

to assure stable operation.

5 V

Notes: 1. Standby

Power is turned on when a signal of

Q1 ON

↓

BIAS ON

37.5 k

23.5 k

3.5 V or 0.05 mA is impressed at pin 2.

When pin 2 is open or connected to

GND, standby is turned on (output off).

2. Muting

5 V

Muting is turned off (output on) when

a signal of 3.5 V or 0.2 mA is impressed

at pin 10.

When pin 10 is open or connected to

GND, muting is turned on (output off).

Q2 ON

↓

MUTE ON

25 k

3. TAB (header of IC) connected to GND.

HA13155

Absolute Maximum Ratings

Item

Symbol

V_CC

Rating

Unit

Operating supply voltage

Supply voltage when no signal*¹

Peak supply voltage*²

Output current*³

Power dissipation*⁴

Junction temperature

Operating temperature

Storage temperature

V_CC(DC)

V_CC(PEAK)

I_O(PEAK)

P_T

°C

150

Topr

–30 to +85

–55 to +125

Tstg

Notes: 1. Tolerance within 30 seconds.

2. Tolerance in surge pulse waveform.

3. Value per 1 channel.

4. Value when attached on the infinite heat sink plate at Ta = 25 °C.

The derating carve is as shown in the graph below.

100

A: When heat sink is infinite (θj-a = 1.5°C/W)

B: When θf (thermal resistance of heat sink) = 3°C/W

(θj-a = 4.5°C/W)

83 W

28 W

100

Ambient temperature Ta (°C)

150

HA13155

Electrical Characteristics (V_CC= 13.2 V, f = 1 kHz, R_L= 4 Ω, Rg = 600 Ω, Ta = 25°C)

Item

Symbol

I_Q1

Min

—

Typ

300

Max

—

Unit

Test Conditions

Quiescent current

Output offset voltage

Gain

Vin = 0

∆V_Q

G_V

–250

30.5

–1.0

+250

33.5

+1.0

Gain difference between

channels

∆G_V

Rated output power

—

V_CC= 13.2 V

THD = 10%, R_L= 4 Ω

Max output power

Pomax

T.H.D.

WBN

—

V_CC= 13.7 V, R_L= 4 Ω

Total harmonic distortion

Output noise voltage

0.02

0.15

Po = 3 W

mVrms

Rg = 0 Ω

BW = 20 to 20 kHz

Ripple rejection

SVR

C.T.

—

Rg = 600 Ω, f = 120 Hz

Channel cross talk

Rg = 600 Ω

Vout = 0 dBm

Input impedance

Standby current

Rin

I_Q2

—

kΩ

µA

—

V_CC

Standby control voltage

(high)

V_STH

3.5

Standby control voltage

(low)

V_STL

V_MH

—

1.5

V_CC

1.5

—

Muting control voltage

(high)

3.5

Muting control voltage

(low)

V_ML

Muting attenuation

ATTM

—

Vout = 0 dBm

HA13155

Characteristics Curve

Quiescent current vs. Supply Voltage

400

300

200

100

Supply Voltage V_CC(V)

Output Power vs. Supply Voltage

R_L= 4 Ω, f = 1 kHz

Supply Voltage V_CC(V)

HA13155

Total Harmonic Distortion vs. Frequency

V_CC= 13.2 V, R_L= 4 Ω

0.5

0.2

0.1

0.05

Po = 8.0 W (Ch1–Ch4)

Po = 1.5 W (Ch1–Ch4)

0.02

0.01

50 100 200 500 1k 2k

Frequency f (Hz)

5k 10k 20k

Total Harmonic Distortion vs. Output Power

V_CC= 13.2 V, R_L= 4 Ω, f = 1 kHz

0.5

0.2

0.1

0.05

0.02

0.01

0.01 0.02 0.05 0.1 0.2

0.5

10 20

Output Power Po (W)

HA13155

Crosstalk vs. Frequency (1)

Input Ch1, V_CC= 13.2 V, Vout = 0 dBm

Ch2

Ch3

Ch4

50 100 200 500 1k 2k

Frequency f (Hz)

5k 10k 20k

Crosstalk vs. Frequency (2)

Input Ch2, V_CC= 13.2 V, Vout = 0 dBm

Ch1

Ch3

Ch4

50 100 200 500 1k 2k

Frequency f (Hz)

5k 10k 20k

HA13155

Crosstalk vs. Frequency (3)

Input Ch3, V_CC= 13.2 V, Vout = 0 dBm

Ch1

Ch2

Ch4

50 100 200 500 1k 2k

Frequency f (Hz)

5k 10k 20k

Crosstalk vs. Frequency (4)

Input Ch4, V_CC= 13.2 V, Vout = 0 dBm

Ch1

Ch2

Ch3

50 100 200 500 1k 2k

Frequency f (Hz)

5k 10k 20k

HA13155

Supply Voltage Rejection Ratio vs. Frequency

V_CC= 13.2 V, RL = 4 Ω, Vripple = 0 dBm, Rg = 620 Ω

Ch1

Ch2

Ch3

Ch4

50 100 200 500 1k 2k

Frequency f (Hz)

5k 10k 20k

50k

Wide Band Noise vs. Signal Source Resistance

V_CC= 13.2 V, R_L= 4 Ω, Vik = 0

0.5

Mute OFF Ch1–Ch4

Mute ON Ch1–Ch4

0.2

0.1

0.05

0.02

0.01

50 100 200 500 1k 2k

5k 10k 20k

50k

Signal Source Resistance Rg (Ω)

HA13155

Power Dissipation vs. Output Power

R_L= 4 Ω, f = 1 kHz, 1ch operation

0.5

0.2

0.1

0.01 0.02 0.05 0.1 0.2

0.5

10 20

Output Power Po (W)

Power Dissipation vs. Frequency

V_CC= 13.2 V, R_L= 4 Ω, Po = 10 W, 1ch operation

Ch1–Ch4

50 100 200 500 1k 2k

Frequency f (Hz)

5k 10k 20k

HA13155

Gain vs. Frequency

V_CC= 13.2 V, R_L= 4 Ω, V_OUT= 0 dBm

Ch1–Ch4

20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k200k 500k 1M

Frequency f (Hz)

HA13155

Package Dimensions

Unit: mm

30.18 ± 0.25

4.50 ± 0.12

3.80 ± 0.05

19.81

+ 0.05

– 0.1

1.55

4.32 ± 0.05

2 – R1.84 ± 0.19

+ 0.06

– 0.04

0.40

+0.09

–0.1

0.70

1.27

0.25 M

27.94

4.29

5.08

1.12

Hitachi Code

JEDEC

EIAJ

SP-23TE

Conforms

—

Weight (reference value) 8.5 g

HA13155

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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