HM62V16258BLTT-7 [HITACHI]

4 M SRAM (256-kword x 16-bit); 的4M SRAM （ 256千字×16位）


型号：	HM62V16258BLTT-7
厂家：	HITACHI SEMICONDUCTOR
描述：	4 M SRAM (256-kword x 16-bit) 的4M SRAM （ 256千字×16位）静态存储器
文件：	总16页 (文件大小：75K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HM62V16258B Series

4 M SRAM (256-kword × 16-bit)

ADE-203-975B (Z)

Rev. 2.0

Oct. 14, 1999

Description

The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16258B

Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS

process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup

systems. It is packaged in standard 44-pin plastic TSOPII.

Features

•

Single 3.0 V supply: 2.7 V to 3.6 V

Fast access time: 70 ns/85 ns (max)

Power dissipation:

Active: 9 mW (typ)

Standby: 3 µW (typ)

•

Completely static memory.

No clock or timing strobe required

Equal access and cycle times

Common data input and output.

Three state output

•

Battery backup operation.

HM62V16258B Series

Ordering Information

Type No.

Access time

Package

HM62V16258BLTT-7

HM62V16258BLTT-8

70 ns

85 ns

400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)

HM62V16258BLTT-7SL

HM62V16258BLTT-8SL

70 ns

85 ns

HM62V16258B Series

Pin Arrangement

44-pin TSOP

I/O15

I/O14

I/O13

I/O12

V_SS

V_CC

I/O11

I/O10

I/O9

I/O8

I/O0

I/O1

I/O2

I/O3

V_CC

V_SS

I/O4

I/O5

I/O6

I/O7

A17

A16

A15

A14

A13

A10

A11

A12

(Top view)

Pin Description

Pin name

Function

A0 to A17

Address input

I/O0 to I/O15

Data input/output

Chip select

Write enable

Output enable

Lower byte select

Upper byte select

Power supply

Ground

V_CC

V_SS

No connection

HM62V16258B Series

Block Diagram

LSB

V _CC

V _SS

A15

A14

A16

•

Memory matrix

2,048 x 2,048

Row

decoder

A17

MSB

A13

I/O0

•

Column I/O

Input

data

Column decoder

control

I/O15

LSB

MSB

A7 A6A5A8A9A10A11A12

•

Control logic

HM62V16258B Series

Operation Table

I/O0 to I/O7

High-Z

Dout

I/O8 to I/O15

High-Z

Dout

Operation

Standby

Read

Dout

High-Z

Dout

Lower byte read

Upper byte read

Write

High-Z

Din

High-Z

Din

Lower byte write

Upper byte write

Output disable

High-Z

Note: H: V_IH, L: V_IL, ×: V_IHor V_IL

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Power supply voltage relative to V_SS

Terminal voltage on any pin relative to V_SS

Power dissipation

V_CC

V_T

–0.5 to + 4.6

–0.5*¹to V_CC+ 0.3*²

P_T

1.0

°C

Storage temperature range

Storage temperature range under bias

Tstg

Tbias

–55 to +125

–10 to +85

Notes: 1. V_Tmin: –3.0 V for pulse half-width ≤ 30 ns.

2. Maximum voltage is +4.6 V.

DC Operating Conditions

Parameter

Symbol

V_CC

Min

2.7

Typ

3.0

Max

3.6

Unit

Note

Supply voltage

V_SS

Input high voltage

Input low voltage

V_IH

2.0

–0.3

—

V_CC+ 0.3

0.6

V_IL

—

Ambient temperature range Ta

—

°C

Note: 1. V_ILmin: –3.0 V for pulse half-width ≤ 30 ns.

HM62V16258B Series

DC Characteristics

Parameter

Symbol Min

Typ*¹Max

Unit Test conditions

Input leakage current

Output leakage current

|I_LI|

—

µA

Vin = V_SSto V_CC

|I_LO|

CS = V_IHor OE = V_IHor WE = V_ILor,

LB = UB =V_IH, V_I/O= V_SSto V_CC

Operating current

I_CC

—

CS = V_IL, Others = V_IH/V_IL, I_I/O= 0 mA

Average HM62V16258B-7 I_CC1

Min. cycle, duty = 100%,

operating

current

I_I/O= 0 mA, CS = V_IL, Others = V_IH/V_IL

HM62V16258B-8 I_CC1

I_CC2

—

Cycle time = 1 µs, duty = 100%,

I_I/O= 0 mA, CS ≤ 0.2 V,

V_IH≥ V_CC– 0.2 V, V_IL≤ 0.2 V

Standby current

I_SB

—

0.3

CS = V_IH

I_SB1

µA

0 V ≤ Vin

CS ≥ V_CC– 0.2 V

I_SB1

—

µA

Output high voltage

Output low voltage

V_OH

2.4

—

I_OH= –1 mA

I_OH= –100 µA

I_OL= 2 mA

V_CC– 0.2—

—

V_OL

—

0.4

0.2

I_OL= 100 µA

Notes: 1. Typical values are at V_CC= 3.0 V, Ta = +25°C and not guaranteed.

2. This characteristic is guaranteed only for L version.

3. This characteristic is guaranteed only for L-SL version.

Capacitance (Ta = +25°C, f = 1.0 MHz)

Parameter

Symbol

Cin

Min

—

Typ

—

Max

Unit

Test conditions Note

Input capacitance

Input/output capacitance

Vin = 0 V

V_I/O= 0 V

C_I/O

—

Note: 1. This parameter is sampled and not 100% tested.

HM62V16258B Series

AC Characteristics (Ta = 0 to +70°C, V_CC= 2.7 V to 3.6 V, unless otherwise noted.)

Test Conditions

•

Input pulse levels: V_IL= 0.4 V, V_IH= 2.2 V

Input rise and fall time: 5 ns

Input timing reference levels: 1.4 V

Output timing reference levels: 1.4 V

Output load: 1 TTL + 30 pF (HM62V16258B-7) (Including scope and jig)

1 TTL + 100 pF (HM62V16258B-8) (Including scope and jig)

Read Cycle

HM62V16258B

-7

-8

Min

—

Parameter

Symbol

t_RC

Min

—

Max

—

Max

—

Unit

Notes

Read cycle time

Address access time

t_AA

—

Chip select access time

Output enable to output valid

Output hold from address change

LB, UB access time

t_ACS

t_OE

t_OH

t_BA

—

Chip select to output in low-Z

LB, UB enable to low-z

Output enable to output in low-Z

Chip deselect to output in high-Z

LB, UB disable to high-Z

Output disable to output in high-Z

t_CLZ

t_BLZ

t_OLZ

t_CHZ

t_BHZ

t_OHZ

2, 3

—

2, 3

—

2, 3

1, 2, 3

HM62V16258B Series

Write Cycle

HM62V16258B

-7

-8

Min

Parameter

Symbol

t_WC

Min

Max

—

Max

—

Unit

Notes

Write cycle time

Address valid to end of write

Chip selection to end of write

Write pulse width

t_AW

t_CW

t_WP

LB, UB valid to end of write

Address setup time

t_BW

t_AS

Write recovery time

t_WR

Data to write time overlap

Data hold from write time

Output active from end of write

t_DW

t_DH

t_OW

Output disable to output in High-Z t_OHZ

Write to output in high-Z t_WHZ

1, 2

Notes: 1. t_CHZ, t_OHZ, t_WHZand t_BHZare defined as the time at which the outputs achieve the open circuit

conditions and are not referred to output voltage levels.

2. This parameter is sampled and not 100% tested.

3. At any given temperature and voltage condition, t_HZmax is less than t_LZmin both for a given device

and from device to device.

4. A write occures during the overlap of a low CS, a low WE and a low LB or a low UB. A write begins

at the latest transition among CS going low, WE going low and LB going low or UB going low. A

write ends at the earliest transition among CS going high, WE going high and LB going high or UB

going high. t_WPis measured from the beginning of write to the end of write.

5. t_CWis measured from the later of CS going low to the end of write.

6. t_ASis measured from the address valid to the beginning of write.

7. t_WRis measured from the earliest of CS or WE going high to the end of write cycle.

HM62V16258B Series

Timing Waveform

Read Cycle

t_RC

Address

Valid address

t_AA

t_ACS

2, 3

1, 2, 3

t_CLZ

t_CHZ

1, 2, 3

t_BHZ

t_BA

LB, UB

2, 3

t_BLZ

1, 2, 3

t_OHZ

t_OE

2, 3

t_OLZ

t_OH

High impedance

Dout

Valid data

HM62V16258B Series

Write Cycle (1) (WE Clock)

t_WC

Valid address

Address

t_WR

t_CW

t_BW

LB, UB

t_AW

t_WP

t_AS*

t_DW

Valid data

t_DH

Din

1, 2

t_WHZ

t_OW

High impedance

Dout

HM62V16258B Series

Write Cycle (2) (CS Clock, OE= V_IH)

t_WC

Valid address

t_AW

Address

t_AS

t_WR*

t_CW

t_BW

LB, UB

t_WP

t_DW

Valid data

t_DH

Din

High impedance

Dout

HM62V16258B Series

Write Cycle (3) (LB, UB Clock, OE = V_IH)

t_WC

Valid address

t_AW

Address

t_CW

t_WR

t_BW

t_AS

LB, UB

t_WP

t_DW

Valid data

t_DH

Din

High impedance

Dout

HM62V16258B Series

Low V_CCData Retention Characteristics (Ta = 0 to +70°C)

Parameter

Symbol

Min Typ*⁴Max Unit Test conditions^*3

V_CCfor data retention

V_DR

2.0

—

Vin ≥ 0V

(1) CS ≥ V_CC– 0.2 V or

(2) LB = UB ≥ V_CC– 0.2 V

CS ≤ 0.2 V

Data retention current

I_CCDR

—

0.8

µA

V_CC= 3.0 V, Vin ≥ 0V

(1) CS ≥ V_CC– 0.2 V or

(2) LB = UB ≥ V_CC– 0.2 V

CS ≤ 0.2 V

I_CCDR

—

0.8

—

µA

Chip deselect to data

retention time

t_CDR

See retention waveform

t_RC

Operation recovery time

t_R

—

Notes: 1. This characteristic is guaranteed only for L-version, 10 µA max. at Ta = 0 to +40°C.

2. This characteristic is guaranteed only for L-SL version, 5 µA max. at Ta = 0 to +40°C.

3. CS controls address buffer, WE buffer, OE buffer, LB, UB buffer and Din buffer. If CS controls data

retention mode, Vin levels (address, WE, OE, LB, UB, I/O) can be in the high impedance state. If

LB, UB controls data retention mode, LB, UB must be LB = UB ≥ V_CC– 0.2 V, CS must be CS ≤ 0.2

V. The other input levels (address, WE, OE, I/O) can be in the high impedance state.

4. Typical values are at V_CC= 3.0 V, Ta = +25˚C and not guaranteed.

5. t_RC= read cycle time.

HM62V16258B Series

Low V_CCData Retention Timing Waveform (1) (CS Controlled)

Data retention mode

t_CDR

t_R

V_CC

2.7 V

V_DR

2.0 V

0 V

≥

CS V_CC– 0.2 V

Low V_CCData Retention Timing Waveform (2) (LB, UB Controlled)

Data retention mode

t_CDR

t_R

V_CC

2.7 V

V_DR

2.0 V

LB, UB

0 V

≥

LB, UB V_CC– 0.2 V

HM62V16258B Series

Package Dimensions

HM62V16258BLTT Series (TTP-44DB)

Unit: mm

18.41

18.81 Max

0.80

0.13

0.80

0.30 ± 0.10

0.25 ± 0.05

11.76 ± 0.20

1.005 Max

0° – 5°

0.50 ± 0.10

0.10

Hitachi Code

TTP-44DB

JEDEC

EIAJ

—

Dimension including the plating thickness

Base material dimension

Weight (reference value) 0.43 g

HM62V16258B Series

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual

property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of

bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,

safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for

maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and

other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the

guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or

failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the

equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage

due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

HM62V16258BLTT-7 [HITACHI]

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