HRF502ATL [HITACHI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, DO-214;
| 型号： | HRF502ATL |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, DO-214 肖特基二极管 |
| 文件： | 总6页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HRF502A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-245C(Z)
Rev 3
Sep. 1997
Features
•
•
Low forward voltage drop and suitable for high effifiency rectifying.
DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRF502A
502A
DO-214
Outline
Cathode mark
Mark
502A
1
2
Lot No.
1. Cathode
2. Anode
HRF502A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
*1
VRRM
Repetitive peak reverse
voltage
20
V
*1
Average rectified current Io
5
A
A
*2
Non-Repetitive peak
forward surge current
IFSM
100
Junction temperature
Storage temperature
Tj
Tstg
125
°C
°C
-40 to +125
Note: 1. See from Fig.4 to Fig.7
Note: 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Forward voltage
Reverse current
ESD-Capability
VF
IR
—
—
—
—
0.40
1.0
—
V
IF = 5A
—
mA
V
VR = 20V
—
250
C=200pF , R=0Ω , Both forward and reverse
direction 1 pulse.
*1
Thermal resistance Rth(j-a)
Rth(j-c)
—
—
90
42
—
—
°C/W Glass epoxy board
Tc=25°C
Note: 1. Glass epoxy board
Land size
3.5
6.8
2.0
Unit: mm
2
HRF502A
Main Characteristic
102
10
10-2
10-3
10-4
Pulse test
Pulse test
Ta=75°C
Ta=75°C
1.0
Ta=25°C
Ta=25°C
10-1
10-5
10-6
10-2
10-3
0
0.1
0.2 0.3
0.5 0.6
0.4
10
20
5
15
25
0
Forward voltage VF (V)
Reverse voltage V (V)
R
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
103
f=1MHz
Pulse test
102
10
10
Reverse voltage V R(V)
40
1.0
Fig.3 Capacitance Vs. Reverse voltage
3
HRF502A
Main Characteristic
12
5
0V
0A
t
D=5/6
D=2/3
t
T
t
t
T
D= \
10
8
D= \
4
T
T
D=1/6
Tj =25°C
Tj =125°C
3
2
Sin
D=1/3
D=1/2
Sin
6
D=1/2
DC
4
1
0
2
0
0
2
3
6
1
4
5
0
5
Reverse voltage V R(V)
Fig.5 Reverse power dissipation Vs. Reverse voltage
20
10
15
Forward current I (A)
F
Fig.4 Forward p ower dissipation Vs. Forward current
6
6
V
=V
/2
RRM
R
V
=V
/2
RRM
R
Tj =125°C
Tj =125°C
Glass epoxy PCB
5
5
DC
DC
4
3
2
1
0
4
3
2
1
0
Sin
D=1/2
D=1/3
D=1/6
Sin
D=1/2
0
25
50
75
125
0
25
Ambient temperature Ta (°C)
Fig.7 Average forward current Vs. Ambient temperature
50
75
125
-25
100
Case temperature Tc (°C)
Fig.6 Average forward current Vs. Case temperature
-25
100
4
HRF502A
Package Dimensions
Unit : mm
Cathode Mark
502A
1
2
7.0 ± 0.2
8.0 ± 0.3
Lot No.
1
2
Cathode
Anode
Hitachi Code
JEDEC Code
EIAJ Code
DO-214
DO-214
—
1.2 ± 0.3
Weight (g)
0.16
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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