HRW0702ATR [HITACHI]

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型号：	HRW0702ATR
厂家：	HITACHI SEMICONDUCTOR
描述：	暂无描述整流二极管肖特基二极管光电二极管
文件：	总6页 (文件大小：35K)
中文：	中文翻译
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HRW0702A

Silicon Schottky Barrier Diode for Rectifying

ADE-208-109E(Z)

Rev 5

Oct. 1997

Features

•

Low forward voltage drop and suitable for high effifiency rectifying.

MPAK Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

Laser Mark

Package Code

HRW0702A

S15

MPAK

Outline

(Top View)

1 NC

2 Anode

3 Cathode

HRW0702A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Value

Unit

V_RRM

Repetitive peak reverse

voltage

Forward current

I_F*¹

I_FM

700

1.4

Non-Repetitive peak

forward current

Non-Repetitive peak

forward surge current

I_FSM

Junction temperature

Storage temperature

125

°C

Tstg

-55 to +125

Notes 1. See from Fig.4 to Fig.6

Notes 2. 10msec sine wave 1 pulse

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ Max Unit Test Condition

Forward voltage

Reverse current

Capacitance

V_F

I_R

—

0.43

200

—

I_F= 700 mA

—

µA

V_R= 20V

120

340

V_R= 0V, f = 1 MHz

Thermal resistance R_th(j-a)

Notes 1. Polyimide board

—

°C/W Polyimide board^*1

20hx15wx0.8t

1.5

Unit: mm

1.5

HRW0702A

Main Characteristic

10^-1

Pulse test

10^-2

10^-3

1.0

Ta=75°C

10^-1

Ta=75°C

Ta=25°C

10^-2

10^-4

10^-5

10^-6

10^-3

10^-4

Reverse voltage V

0.6

Forward voltage V

0.8

0.2

0.4

1.0

(V)

Fig.2 Reverse current Vs. Reverse voltage

Fig.1 Forward current Vs. Forward voltage

10²

f=1MHz

Pulse test

1.0

Reverse voltage V

(V)

Fig.3 Capacitance Vs. Reverse voltage

HRW0702A

Main Characteristic

2.5

2.0

0.6

D=1/6

0.5

0.4

D=5/6

D=2/3

D=1/3

Sin( ˘=180°)

Tj =25°C

Tj =125°C

D=1/2

1.5

1.0

0.3

0.2

D=1/2

Sin( ˘=180°)

0.5

0.1

Reverse voltage @ @V @(V)

0.7

0.6

0.5

0.1 0.2

0.3 0.4

Forward current @ @I @(A)

Fig4. Forward power dissipation Vs. Forward current

Fig5. Reverse power dissipation Vs. Reverse voltage

0.8

RRM

Tj =125°C

Rth(j-a)=340°C/W

@Io

0.6

0.4

Sin( ˘=180°)

D=1/2

D=1/3

0.2

D=1/6

125

75 100

-25

Ambient temperature Ta ( °C)

Fig.6 Average rectified current Vs. Ambient temperature

HRW0702A

Package Dimensions

Unit : mm

+ 0.10

– 0.06

+ 0.10

– 0.05

0.4

0.16

Laser Mark

0 – 0.10

S15

1 NC

0.95

2 Anode

3 Cathode

1.9

+ 0.3

– 0.1

2.8

Hitachi Code

JEDEC Code

EIAJ Code

MPAK(1)

—

SC-59A

0.011

Weight (g)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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