HRW0703A [HITACHI]
Silicon Schottky Barrier Diode for Rectifying; 硅肖特基二极管整流
| 型号： | HRW0703A |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon Schottky Barrier Diode for Rectifying |
| 文件： | 总6页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HRW0703A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-110E (Z)
Rev 5
Oct. 1997
Features
•
•
Low forward voltage drop and suitable for high effifiency rectifying.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRW0703A
S8
MPAK
Outline
3
1
2
(Top View)
1 NC
2 Anode
3 Cathode
HRW0703A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
*1
VRRM
Repetitive peak reverse
voltage
30
V
*1
Forward current
IF
700
5
mA
A
*2
Non-Repetitive peak
forward surge current
IFSM
Junction temperature
Storage temperature
Tj
125
°C
°C
Tstg
-55 to +125
Note 1. See from Fig.4 to Fig.7, with polyimide board
Note 2. 50Hz sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
VF
IR
—
—
—
—
0.50
100
—
V
IF = 700 mA
VR = 30V
—
µA
C
150
390
290
pF
VR = 0V, f = 1MHz
Thermal resistance Rth1(j-a)
Rth2(j-a)
°C/W Polyimide board *1
°C/W Ceramic board *2
Note 1. Polyimide board
20hx15wx0.8t
1.5
Unit: mm
1.5
Note 2. Ceramic board
20hx15wx0.65t
4.2
2.0
Unit: mm
2
HRW0703A
Main Characteristic
10-1
10
Pulse test
Pulse test
10-2
10-3
1.0
Ta=75°C
Ta=75°C
Ta=25°C
Ta=25°C
10-4
10-5
10-6
10-1
10-2
20
30
0
10
40
0.6
0.8
0
0.2
0.4
1.0
50
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
102
f=1MHz
Pulse test
10
1.0
10
40
1.0
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
3
HRW0703A
Main Characteristic
0.80
1.6
0V
D=1/6
D=5/6
D=2/3
0A
t
t
T
t
D=
\
T
t
T
1.2
0.8
0.60
0.40
T
D=
\
Tj =25°C
D=1/3
D=1/2
Tj =125°C
DC
D=1/2
Sin( ˘=180°)
Sin( ˘=180°)
0.4
0
0.20
0
0
10
25
0
5
15
20
30
0.4
Forward current @ @I @(A)
0.2
0.6
1.0
0.8
Reverse voltage @ @V @(V)
F
R
Fig4. Forward power dissipation Vs. Forward current
Fig5. Reverse power dissipation Vs. Reverse voltage
0.80
0.80
V
=V
/2
RRM
V
=V
/2
RRM
R
R
DC
Sin
Tj =125°C
Tj =125°C
Ceramic board
Polyimide board
DC
@Io
0.60
0.40
I@o
0.60
0.40
D=1/2
D=1/3
Sin
0.20
0
0.20
D=1/2
D=1/3
D=1/6
D=1/6
0
-25
0
50
125
75 100
-25
25
0
50
Ambient temperature Ta ( °C)
Fig.7 Average rectified current Vs. Ambient temperature
125
25
75 100
Ambient temperature Ta ( °C)
Fig.6 Average rectified current Vs. Ambient temperature
4
HRW0703A
Package Dimensions
Unit : mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.4
0.16
Laser Mark
3
0 – 0.10
S 8
2
1
1 NC
0.95
0.95
2 Anode
3 Cathode
1.9
+ 0.3
– 0.1
2.8
Hitachi Code
JEDEC Code
EIAJ Code
MPAK(1)
—
SC-59A
0.011
Weight (g)
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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