HVU145 [HITACHI]

Silicon Epitaxial Planar Pin Diode for High Frequency Switching; 硅外延平面PIN二极管的高频开关


型号：	HVU145
厂家：	HITACHI SEMICONDUCTOR
描述：	Silicon Epitaxial Planar Pin Diode for High Frequency Switching 硅外延平面PIN二极管的高频开关 PIN二极管开关测试光电二极管
文件：	总6页 (文件大小：37K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HVU145

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

ADE-208-1508A (Z)

Rev.1

Jun. 2002

Features

•

Low capacitance.(C = 0.45 pF max)

Low forward resistance. (rf = 1.8 Ω max)

Ultra small Resin Package (URP) is suitable for surface mount design.

Ordering Information

Type No.

Laser Mark

Package Code

HVU145

URP

Pin Arrangement

Cathode mark

Mark

1. Cathode

2. Anode

HVU145

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

V_R

I_F

°C

150

125

Tstg

–55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

—

Max

100

0.9

Unit

Test Condition

Reverse current

Forward voltage

Capacitance

I_R

—

V_R= 60 V

V_F

r_f

—

I_F= 2 mA

—

0.45

1.8

Ω

V_R= 1 V, f = 1 MHz

I_F= 10 mA, f = 100 MHz

Forward resistance

ESD-Capability *¹

—

100

—

C = 200 pF, R = 0 Ω, Both forward and

reverse direction 1 pulse.

Note : 1. Failure criterion ; I_R≥ 100 nA at V_R= 60 V

Rev.1, Jun. 2002, page 2 of 6

HVU145

Main Characteristic

10^-2

10^-7

10^-8

10^-9

10^-4

10^-6

10^-8

Ta = 75 C

Ta = 50 C

10^-10

Ta = 75 C

Ta = 25°C

10^-11

10^-12

Ta = –25°C

Ta = 25 C

10^-10

10^-12

10^-13

0.2

0.4

0.6

0.8

1.0

Reverse voltage V_R(V)

Fig.2 Reverse current vs. Reverse voltage

100

Forward voltage V_F(V)

Fig.1 Forward current vs. Forward voltage

10³

f = 1MHz

f = 100MHz

10²

10¹

10⁰

10^-1

1.0

0.1

10^-4

10^-3

Forward current I_F(A)

10^-2

10^-1

0.1

1.0

Reverse voltage V_R(V)

Fig.3 Capacitance vs. Reverse voltage

Fig.4 Forward resistance vs. Forward current

Rev.1, Jun. 2002, page 3 of 6

HVU145

10⁷

10⁶

10⁵

10⁴

10³

10²

10¹

10⁰

f=100MHz

0.2

Forward voltage V_F(V)

Fig.5 Forward resistance (parallel) vs. Forward voltage

0.4

0.6

0.8

Rev.1, Jun. 2002, page 4 of 6

HVU145

Package Dimensions

As of January, 2002

Unit: mm

1.7 ± 0.15

2.5 ± 0.15

Hitachi Code

JEDEC

JEITA

URP

Conforms

—

Mass (reference value)

0.004 g

Rev.1, Jun. 2002, page 5 of 6

HVU145

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

URL

http://www.hitachisemiconductor.com/

For further information write to:

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive Whitebrook Park

Hitachi Europe Ltd.

Electronic Components Group

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00

Singapore 049318

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower

San Jose,CA 95134

Lower Cookham Road

World Finance Centre,

Tel: <1> (408) 433-1990 Maidenhead

Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Tel : <65>-6538-6533/6538-8577

Fax : <65>-6538-6933/6538-3877

URL : http://semiconductor.hitachi.com.sg

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon Hong Kong

Tel : <852>-2735-9218

Fax: <44> (1628) 585200

Fax : <852>-2730-0281

URL : http://semiconductor.hitachi.com.hk

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road

Hung-Kuo Building

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straße 3

D-85622 Feldkirchen

Postfach 201, D-85619 Feldkirchen

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Colophon 6.0

Rev.1, Jun. 2002, page 6 of 6

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