HZM22NB1TL [HITACHI]

Zener Diode, 21.325V V(Z), 2.09%, 0.2W, Silicon, Unidirectional, SC-59A, 3 PIN;


型号：	HZM22NB1TL
厂家：	HITACHI SEMICONDUCTOR
描述：	Zener Diode, 21.325V V(Z), 2.09%, 0.2W, Silicon, Unidirectional, SC-59A, 3 PIN 测试光电二极管
文件：	总10页 (文件大小：41K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HZM-N Series

Silicon Epitaxial Planar Zener Diode for Stabilizer

ADE-208-130C (Z)

Rev. 3

Jan. 1999

Features

•

Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.

MPAK Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

Laser Mark

Let to Mark Code

Package Code

HZM-N Series

MPAK

Outline

(Top View)

1 NC

2 Anode

3 Cathode

HZM-N Series

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Pd *¹

Value

200

Unit

°C

Power dissipation

Junction temperature

Storage temperature

Note: 1. See Fig. 3.

150

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Zener Voltage *¹

Reverse Current

Dynamic Resistance

Test

V_Z(V)

Grade Min

Condition

I_R(µA) Condition

r_d(Ω)

Max

100

Condition

Type

Max

2.20

2.40

2.60

2.90

2.75

2.90

3.20

3.05

3.20

3.50

3.35

3.50

3.80

3.65

3.80

4.10

3.97

4.10

4.48

4.21

4.34

4.48

I_Z(mA)

Max

120

V_R(V)

0.5

I_Z(mA)

HZM2.0N

HZM2.2N

HZM2.4N

HZM2.7N

1.90

2.10

2.30

2.50

2.65

2.80

2.95

3.10

3.25

3.40

3.55

3.70

3.87

4.01

4.15

4.28

0.7

100

1.0

100

1.0

110

HZM3.0N

HZM3.3N

HZM3.6N

HZM3.9N

HZM4.3N

1.0

120

130

Note: 1. Tested with pulse (P_W= 40ms)

HZM-N Series

Zener Voltage *¹

V_Z(V)

Reverse Current

Dynamic Resistance

Test

Condition

Test

I_R(µA) Condition

r_d(Ω)

Max

130

Condition

I_Z(mA)

Type

Grade Min

Max

4.90

4.61

4.75

4.90

5.37

5.04

5.20

5.37

5.92

5.55

5.73

5.92

6.53

6.12

6.33

6.53

7.14

6.73

6.93

7.14

7.84

7.36

7.60

7.84

8.64

8.10

8.36

8.64

9.55

8.93

9.23

9.55

I_Z(mA)

Max

V_R(V)

HZM4.7N

4.42

4.55

4.69

4.84

4.98

5.14

5.31

5.49

5.67

5.86

6.06

6.26

6.47

6.65

6.86

7.06

7.28

7.52

7.76

8.02

8.28

8.56

8.85

9.15

1.0

HZM5.1N

HZM5.6N

HZM6.2N

HZM6.8N

HZM7.5N

HZM8.2N

HZM9.1N

1.5

2.5

3.0

3.5

4.0

5.0

6.0

130

Note: 1. Tested with pulse (P_W= 40ms)

HZM-N Series

Zener Voltage *¹

Reverse Current

Dynamic Resistance

Test

V_Z(V)

Max

Condition

I_R(µA) Condition

r_d(Ω)

Max

Condition

I_Z(mA)

Type

Grade Min

I_Z(mA)

Max

V_R(V)

HZM10N

9.45

10.55

9.87

7.0

9.45

9.77

10.21

10.55

11.56

10.88

11.22

11.56

12.60

11.90

12.24

12.60

13.96

13.03

13.49

13.96

15.52

14.46

14.98

15.52

17.09

16.01

16.51

17.09

19.03

17.70

18.35

19.03

21.08

19.70

20.39

21.08

10.11

10.44

10.76

11.10

11.42

11.74

12.08

12.47

12.91

13.37

13.84

14.34

14.85

15.37

15.85

16.35

16.94

17.56

18.21

18.86

19.52

20.21

HZM11N

HZM12N

HZM13N

HZM15N

HZM16N

HZM18N

HZM20N

8.0

9.0

10.0

11.0

12.0

13.0

15.0

Note: 1. Tested with pulse (P_W= 40ms)

HZM-N Series

Zener Voltage *¹

V_Z(V)

Reverse Current

Dynamic Resistance

Test

Condition

Test

I_R(µA) Condition

r_d(Ω)

Max

Condition

I_Z(mA)

Type

Grade Min

Max

I_Z(mA)

Max

V_R(V)

HZM22N

20.88

21.54

22.23

22.93

23.72

24.54

25.10

28.00

31.00

34.00

23.17

21.77

22.47

23.17

25.57

23.96

24.78

25.57

28.90

32.00

35.00

38.00

17.0

HZM24N

19.0

HZM27N

HZM30N

HZM33N

HZM36N

21.0

23.0

25.0

27.0

Note: 1. Tested with pulse (P_W= 40ms)

HZM-N Series

Mark Code

Type

Grade MARK No.

Type

Grade MARK No.

Type

Grade MARK No.

HZM2.0N

HZM2.2N

HZM2.4N

2 0 –

2 2 –

2 4 –

2 7 1

2 7 2

3 0 1

3 0 2

3 3 1

3 3 2

3 6 1

3 6 2

3 9 1

3 9 2

4 3 1

4 3 2

4 3 3

4 7 1

4 7 2

4 7 3

5 1 1

5 1 2

5 1 3

5 6 1

5 6 2

5 6 3

6 2 1

6 2 2

6 2 3

6 8 1

6 8 2

6 8 3

HZM7.5N B1

7 5 1

7 5 2

7 5 3

8 2 1

8 2 2

8 2 3

9 1 1

9 1 2

9 1 3

1 0 1

1 0 2

1 0 3

1 1 1

1 1 2

1 1 3

1 2 1

1 2 2

1 2 3

1 3 1

1 3 2

1 3 3

1 5 1

1 5 2

1 5 3

1 6 1

1 6 2

1 6 3

1 8 1

1 8 2

1 8 3

HZM20N B1

2 0 1

2 0 2

2 0 3

2 2 1

2 2 2

2 2 3

2 4 1

2 4 2

2 4 3

2 7 –

3 0 –

3 3 –

3 6 –

HZM2.7N B1

HZM8.2N B1

HZM22N B1

HZM3.0N B1

HZM9.1N B1

HZM24N B1

HZM3.3N B1

HZM3.6N B1

HZM10N B1

HZM27N

HZM30N

HZM33N

HZM36N

HZM3.9N B1

HZM11N B1

HZM4.3N B1

HZM12N B1

HZM4.7N B1

HZM13N B1

HZM5.1N B1

HZM15N B1

HZM5.6N B1

HZM16N B1

HZM6.2N B1

HZM18N B1

HZM6.8N B1

HZM-N Series

Example of Marking

1. One grade type (grade type B)

Underline

20 -

30 -

HZM2.0NB

HZM30NB

2. Two grade type (B1, B2)

301

302

HZM3.0NB1

HZM3.0NB2

3. Three grade type (B1, B2, B3)

433

431

432

HZM4.3NB1

HZM4.3NB3

HZM4.3NB2

The grade B type includes from B1 min. to B3 (or B2) max.

Notes: 1.

B grade is standard and has better delivery, These are marked one of B1, B2, B3.

Ordering P/N HZM-N series are delivered taped (TL/TR).

Choose one taping code and adhere to parts No.

Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR).

(Grade B type)

HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR) •• HZM24NB3TL (or TR).

(Grade B1, B2, B3 type)

HZM-N Series

Main Characteristic

Zener Voltage V_Z(V)

Fig.1 Zener current Vs. Zener voltage

250

0.10

1.0mm

0.09

%/°C

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

200

Cu Foil

Printed circuit board

25 62 1.6t mm

Material:

Glass Epoxy Resin + Cu Foil

mV/°C

150

100

–5

–0.01

–0.02

–10

–15

–20

–25

–0.03

–0.04

–0.05

–0.06

10 15 20 25 30 35 40 45

Zener Voltage V_Z(V)

Ambient Temperature Ta ( °C)

200

100

150

Fig.2 Temperature Coefficient Vs. Zener voltage

Fig.3 Power Dissipation Vs. Ambient Temperature

HZM-N Series

Package Dimensions

Unit : mm

+ 0.10

– 0.06

+ 0.10

– 0.05

0.4

0.16

Laser Mark

0 – 0.10

1 NC

0.95

2 Anode

3 Cathode

1.9

+ 0.3

2.8

– 0.1

HITACHI Code

JEDEC Code

EIAJ Code

MPAK(1)

—

SC-59A

0.011

Weight (g)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

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Harbour City, Canton Road, Tsim Sha Tsui,

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Tel: <852> (2) 735 9218

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Tel: 535-2100

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Germany

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Tel: <886> (2) 2718-3666

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Telex: 40815 HITEC HX

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Electronic Components Group.

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Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

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