HZS12A1L [HITACHI]

Zener Diode, 11.85V V(Z), 2.11%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN;
HZS12A1L
型号: HZS12A1L
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Zener Diode, 11.85V V(Z), 2.11%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN

文件: 总6页 (文件大小:28K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HZS-L Series  
Silicon Epitaxial Planar Zener Diode for Low Noise Application  
ADE-208-121A(Z)  
Rev 1  
Features  
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.  
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for  
stabilized power supply, etc.  
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZS-L Series  
Type No.  
MHD  
Outline  
B
2
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
HZS-L Series  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Pd  
Value  
400  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
200  
Tstg  
–55 to +175  
°C  
Electrical Characteristics (Ta = 25°C)  
Zener Voltage  
Reverese Current  
Dynamic Resistance  
Test  
Test  
Condition rd ()  
Test  
Condition  
VZ (V)*1  
Condition IR (µA)  
Type  
Grade  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
Min  
5.2  
5.3  
5.4  
5.5  
5.6  
5.7  
5.8  
6.0  
6.1  
6.3  
6.4  
6.6  
6.7  
6.9  
7.0  
7.2  
7.3  
7.5  
7.7  
7.9  
8.1  
Max  
5.5  
5.6  
5.7  
5.8  
5.9  
6.0  
6.1  
6.3  
6.4  
6.6  
6.7  
6.9  
7.0  
7.2  
7.3  
7.6  
7.7  
7.9  
8.1  
8.3  
8.5  
IZ (mA)  
Max  
VR (V)  
Max  
IZ (mA)  
HZS6L  
0.5  
1
2.0  
150  
0.5  
80  
60  
60  
0.5  
0.5  
0.5  
HZS7L  
0.5  
1
3.5  
HZS9L  
0.5  
1
6.0  
60  
0.5  
Note: 1. Tested with DC.  
2
HZS-L Series  
Zener Voltage  
VZ (V)*1  
Reverese Current  
Test  
Dynamic Resistance  
Test  
Test  
Condition IR (µA)  
Condition rd ()  
Condition  
IZ (mA)  
0.5  
Type  
Grade  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
1
Min  
8.3  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZS9L  
8.7  
0.5  
1
6.0  
60  
8.5  
8.9  
8.7  
9.1  
8.9  
9.3  
9.1  
9.5  
9.3  
9.7  
HZS11L  
9.5  
9.9  
0.5  
1
8.0  
80  
0.5  
9.7  
10.1  
10.3  
10.6  
10.8  
11.1  
11.3  
11.6  
11.9  
12.1  
12.4  
12.7  
12.9  
13.1  
13.4  
13.7  
14.0  
14.3  
14.7  
15.1  
15.5  
15.9  
16.5  
17.1  
9.9  
10.2  
10.4  
10.7  
10.9  
11.1  
11.4  
11.6  
11.9  
12.2  
12.4  
12.6  
12.9  
13.2  
13.5  
13.8  
14.1  
14.5  
14.9  
15.3  
15.7  
16.3  
HZS12L  
0.5  
1
10.5  
80  
0.5  
HZS15L  
HZS16L  
0.5  
0.5  
1
1
13.0  
14.0  
80  
80  
0.5  
0.5  
2
3
1
2
3
Note: 1. Tested with DC.  
3
HZS-L Series  
Zener Voltage  
VZ (V)*1  
Reverese Current  
Test  
Dynamic Resistance  
Test  
Test  
Condition IR (µA)  
Condition rd ()  
Condition  
IZ (mA)  
0.5  
Type  
Grade  
Min  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZS18L  
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
16.9  
17.5  
18.1  
18.8  
19.5  
20.2  
20.9  
21.6  
22.3  
22.9  
23.6  
24.3  
25.2  
26.2  
27.2  
28.2  
29.2  
30.2  
31.2  
32.2  
33.2  
34.2  
35.3  
36.4  
17.7  
18.3  
19.0  
19.7  
20.4  
21.1  
21.9  
22.6  
23.3  
24.0  
24.7  
25.5  
26.6  
27.6  
28.6  
29.6  
30.6  
31.6  
32.6  
33.6  
34.6  
35.7  
36.8  
38.0  
0.5  
1
15.0  
80  
HZS20L  
HZS22L  
HZS24L  
HZS27L  
HZS30L  
HZS33L  
HZS36L  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
1
1
1
1
1
1
1
18.0  
20.0  
22.0  
24.0  
27.0  
30.0  
33.0  
100  
100  
120  
150  
200  
250  
300  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
Notes: 1. Tested with DC.  
2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L  
4
HZS-L Series  
Main Characteristic  
10-2  
10-3  
10-4  
10-5  
10-6  
10-7  
10-8  
0
5
15  
25  
30  
35  
40  
10  
20  
Zener Voltage V Z (V)  
Fig.1 Zener current Vs. Zener voltage  
0.10  
50  
40  
500  
400  
l
%/°C  
0.08  
2.5 mm  
3 mm  
0.06  
0.04  
0.02  
0
30  
Printed circuit board  
100 180 1.6t mm  
Quality: paper phenol  
×
×
20  
mV/°C  
10  
300  
200  
l=5 mm  
0
–10  
–20  
–30  
–0.02  
–0.04  
l=10 mm  
(Publication value)  
–0.06  
100  
0
–40  
–50  
–0.08  
–0.10  
15 20 25 30  
35 40  
0
5
10  
0
50  
Ambient Temperature Ta (°C)  
200  
100  
150  
Zener Voltage V (V)  
Z
Fig.2 Temperature Coefficient Vs. Zener voltage  
Fig.3 Power Dissipation Vs. Ambient Temperature  
5
HZS-L Series  
Package Dimensions  
Unit : mm  
26.0 Min  
26.0 Min  
2.4 Max  
B
2
1
2
Type No. (Black)  
Cathode band (Black)  
1. Cathode  
2. Anode  
Hitachi Code  
JEDECCode  
EIAJCode  
MHD  
DO-34  
-
Abbreviation of type name  
Type name  
•••  
without HZS L.  
B
2
Weight(g)  
0.084  
Zener voltage  
classification  
symbol equal  
to B1 or B3.  
Expanded drawing of marking  
6

相关型号:

HZS12A1LRY

Zener Diode, 0.4W, Silicon, Unidirectional, DO-34, DO-34, 2 PIN
HITACHI

HZS12A1RX

0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
RENESAS

HZS12A2

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
RENESAS

HZS12A2

Zener Diode, 12.15V V(Z), 2.06%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN
HITACHI

HZS12A2

Zener Diode,
EIC

HZS12A2-E

暂无描述
RENESAS

HZS12A2L

Zener Diode,
EIC

HZS12A2L-E

12.15 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34, MHD, 2 PIN
RENESAS

HZS12A2LRX-E

暂无描述
RENESAS

HZS12A2LTA-E

暂无描述
RENESAS

HZS12A2LTD-E

暂无描述
RENESAS

HZS12A2TA

0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34, DO-34, 2 PIN
RENESAS