PF08107B [HITACHI]
Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, RF-K-8, 10 PIN;
| 型号： | PF08107B |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, RF-K-8, 10 PIN 高功率电源 射频 微波 |
| 文件： | 总44页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PF08107B
MOS FET Power Amplifier Module
for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-787F (Z)
7th Edition
Feb. 2001
Application
•
•
Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz).
For 3.5 V nominal operation
Features
•
•
•
•
•
•
2 in / 2 out dual band amplifier
Simple external circuit including output matching circuit
One power control pin with one band switch
High gain 3stage amplifier : 0 dBm input Typ
Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ
High efficiency : 50 % Typ at 35.0 dBm for E-GSM
43 % Typ at 32.0 dBm for DCS1800
Pin Arrangement
• RF-K-8
1: Pin GSM
2: Vapc
3: Vdd1
5
6
G
G
4
4: Pout GSM
5: Pout DCS
6: Vdd2
7: Vctl
8: Pin DCS
G: GND
7
8
3
G
G
2
1
PF08107B
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Vdd
Rating
Unit
V
Supply voltage
Supply current
8
Idd GSM
Idd DCS
Vctl
3.5
A
2
A
Vctl voltage
4
V
Vapc voltage
Vapc
4
V
Input power
Pin
10
dBm
°C
°C
W
Operating case temperature
Storage temperature
Output power
Tc (op)
Tstg
−30 to +100
−30 to +100
Pout GSM
Pout DCS
5
3
W
Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz),
and the DCS1800-band (1710 to 1785 MHz).
Electrical Characteristics for DC (Tc = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Drain cutoff current
Ids
20
µA
Vdd = 4.7 V, Vapc = 0 V,
Vctl = 0.2 V
300
µA
Vdd = 8 V, Vapc = 0 V,
Vctl = 0.2 V,
Tc = −20 to +70°C
Vapc control current Iapc
Vctl control current Ictl
3
2
mA
Vapc = 2.2 V
Vctl = 3 V
µA
2
PF08107B
Electrical Characteristics for E-GSM mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Symbol
F
Min
880
2.0
–2
Typ
Max
915
2.8
2
Unit
MHz
V
Test Condition
Frequency range
Band select (GSM active)
Input power
Vctl
Pin
0
dBm
V
Control voltage range
Supply voltage
Vapc
Vdd
0.2
3.0
43
2.2
4.5
3.5
50
V
Total efficiency
ηT
%
Pout GSM = 35 dBm,
Vapc = controlled
2nd harmonic distortion
3rd harmonic distortion
2nd H.D.
3rd H.D.
−45
−45
−35
−35
−35
3
dBc
dBc
dBc
4th~8th harmonic distortion 4th~8th H.D.
Input VSWR
VSWR (in)
Pout (1)
1.5
Output power (1)
Output power (2)
35.0
33.5
36.0
34.5
dBm
dBm
Vapc = 2.2 V
Pout (2)
Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +70°C
Isolation
−42
−30
−37
−20
dBm
dBm
Vapc = 0.2 V, Pin = 2 dBm
Isolation at
Pout GSM = 35 dBm,
DCS RF-output
when GSM is active
Measured at f = 1760 to 1830 MHz
Switching time
Stability
tr, tf
1
2
µs
Pout GSM = 0 to 35.0 dBm
No parasitic oscillation
Vdd = 3.1 to 4.5 V, Pout ≤ 35.0 dBm,
Vapc GSM ≤ 2.2 V,
Rg = 50 Ω, Tc = 25°C,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
Vdd = 3.1 to 4.5 V,
Pout GSM ≤ 35.0 dBm,
Vapc GSM ≤ 2.2 V,
Rg = 50 Ω, t = 20 sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
Noise power
Pnoise1
Pnoise2
−80
−84
dBm
dBm
f0 = 915 MHz, frx = f0 +10 MHz,
Pout GSM = 35 dBm,
RES BW = 100 kHz
f0 = 915 MHz, frx = f0 +20 MHz,
Pout GSM = 35 dBm,
RES BW = 100 kHz
3
PF08107B
Electrical Characteristics for E-GSM mode (cont)
Item
Symbol
Min
Typ
Max
200
20
Unit
Test Condition
Slope Pout/Vapc
Phase shift
dB/V Pout GSM = 5 to 35 dBm
deg
dB
Pout GSM = 33.5 to 34.5 dBm
Total conversion gain1
−5
f0 = 915 MHz,
Other sig. = 895 MHz (−40 dBm)
Pout GSM = 33.5 dBm
Total conversion gain2
AM output
−5
dB
%
f0 = 915 MHz,
Other sig. = 905 MHz (−40 dBm)
Pout GSM = 33.5 dBm
40
Pout GSM = +5 dBm,
4%AM modulation at input
50 kHz modulation frequency
4
PF08107B
Electrical Characteristics for DCS1800 mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Symbol
F
Min
1710
0
Typ
Max
1785
0.1
2
Unit
Test Condition
Frequency range
Band select (DCS active)
Input power
MHz DCS1800 (1710 to 1785)
Vctl
V
Pin
–2
0
dBm
V
Control voltage range
Supply voltage
Vapc
Vdd
0.2
3.0
37
2.2
4.5
3.5
43
V
Total efficiency
ηT
%
Pout DCS = 32.0 dBm,
Vapc = controlled
2nd harmonic distortion
3rd harmonic distortion
2nd H.D.
3rd H.D.
−45
−45
−35
−35
–35
3
dBc
dBc
dBc
4th~8th harmonic distortion 4th~8th H.D.
Input VSWR
VSWR (in)
Pout (1)
1.5
33
Output power (1)
Output power (2)
32.0
30.5
dBm Vapc = 2.2 V
Pout (2)
31.5
dBm Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +70°C
Isolation
−42
−37
dBm Vapc = 0.2 V, Pin DCS = 2 dBm
Switching time
Stability
tr, tf
1
2
µs
Pout DCS = 0 to 32.0 dBm
No parasitic oscillation
No degradation
−77
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
Noise power
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Output VSWR = 10 : 1 All phases
Pnoise
dBm f0 = 1785 MHz, frx = f0 +20 MHz,
Pout DCS = 32.0 dBm,
RES BW = 100 kHz
Slope Pout/Vapc
Phase shift
200
20
dB/V Pout DCS = 0 to 32.0 dBm
deg
dB
Pout DCS = 30.5 to 31.5 dBm
Total conversion gain1
−5
f0 = 1785 MHz, Pout DCS = 30.5 dBm,
Other sig. = 1765 MHz (−40 dBm)
AM output
40
%
Pout DCS = 0 dBm,
4%AM modulation at input
50 kHz modulation frequency
5
PF08107B
Internal Diagram and External Circuit
PIN8
Pin DCS
PIN5
Pout DCS
PIN1
Pin GSM
PIN4
Pout GSM
Z1 Z2
Z3
Z4
Bias circuit
PIN2
Vapc
PIN7
Vctl
PIN3
Vdd1
PIN6
Vdd2
C1
C2
C5
FB
C3
FB
C4
FB
C6
FB
FB
Pin Pin
Vapc
Vctl
Vdd1
Vdd2
Pout GSM Pout DCS
Note: C1 to C4 = 0.01 µF CERAMIC CHIP
C5 = C6 = 4.7 F TANTALUM ELECTROLYTE
FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent
Z1 = Z2 = Z3 = Z4 = 50 Ω MICRO STRIP LINE
6
PF08107B
Characteristic Curves
Vapc vs Pout – Vdd Dependence
880 MHz Pout vs. Vapc
38
37
36
35
34
33
32
31
30
29
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
28
0
0.5
1
1.5
2
2.5
3
Vapc (V)
915 MHz Pout vs. Vapc
38
37
36
35
34
33
32
31
30
29
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
28
0
0.5
1
1.5
2
2.5
3
Vapc (V)
7
PF08107B
Vapc vs Efficiency – Vdd Dependence
880 MHz Efficiency vs. Vapc
60
Po = 35 dBm,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
50
40
30
20
10
0
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
0.5
1
1.5
2
2.5
3
Vapc (V)
915 MHz Efficiency vs. Vapc
60
50
40
30
20
10
0
Po = 35 dBm,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
0.5
1
1.5
2
2.5
3
Vapc (V)
8
PF08107B
Vapc vs Pout – Temperature Dependence
880 MHz Pout vs. Vapc
40
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω
−20°C
35
30
25
20
15
10
5
25°C
75°C
0
0
0.5
1
1.5
2
2.5
3
Vapc (V)
915 MHz Pout vs. Vapc
40
35
30
25
20
15
10
5
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
0
0
0.5
1
1.5
2
2.5
3
Vapc (V)
9
PF08107B
Vapc vs Efficiency – Temperature Dependence
880 MHz Efficiency vs. Vapc
60
50
40
30
20
10
0
Po = 35 dBm,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
−20°C
25°C
75°C
0
0.5
1
1.5
2
2.5
3
Vapc (V)
915 MHz Efficiency vs. Vapc
60
50
40
30
20
10
0
Po = 35 dBm,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
−20°C
25°C
75°C
0
0.5
1
1.5
2
2.5
3
Vapc (V)
10
PF08107B
Pin vs Pout – Vdd Dependence
880 MHz Pout vs. Pin
40
35
30
25
20
15
10
5
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
915 MHz Pout vs. Pin
40
35
30
25
20
15
10
5
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
11
PF08107B
Pin vs Efficiency – Vdd Dependence
880 MHz Efficiency vs. Pin
60
50
40
30
20
10
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
915 MHz Efficiency vs. Pin
60
50
40
30
20
10
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
12
PF08107B
Pin vs Pout – Temperature Dependence
880 MHz Pout vs. Pin
40
35
30
25
20
15
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
10
5
−20°C
25°C
75°C
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
915 MHz Pout vs. Pin
40
35
30
25
20
15
10
5
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
13
PF08107B
Pin vs Efficiency – Temperature Dependence
880 MHz Efficiency vs. Pin
60
50
40
30
20
10
0
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
−20
−15
−10
−5
0
5
10
Pin (dBm)
915 MHz Efficiency vs. Pin
60
50
40
30
20
10
0
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
−20
−15
−10
−5
0
5
10
Pin (dBm)
14
PF08107B
Pout vs Efficiency – Vdd Dependence
880 MHz Efficiency vs. Pout
60
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
50
40
30
20
10
0
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
915 MHz Efficiency vs. Pout
60
50
40
30
20
10
0
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
15
PF08107B
Pout vs Idd – Vdd Dependence
880 MHz Idd, Iapc vs. Pout
3
2.5
2
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
Iapc (3.5 V)
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
Pout (dBm)
915 MHz Idd, Iapc vs. Pout
3
2.5
2
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
Iapc (3.5 V)
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
Pout (dBm)
16
PF08107B
Pout vs Harmonic Distortion – Vdd Dependence
880 MHz 2fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
915 MHz 2fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
17
PF08107B
Pout vs Harmonic Distortion – Vdd Dependence (cont)
880 MHz 3fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
915 MHz 3fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
18
PF08107B
Pout vs Slope, AM-AM conversion
880 MHz AM/AM, Slope vs. Pout
100
80
60
40
20
500
400
300
200
100
0
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
AM (%)
SLP (dB/V)
0
−60
−40
−20
0
20
40
Pout (dBm)
915 MHz AM/AM, Slope vs. Pout
100
80
60
40
20
500
400
300
200
100
0
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
AM (%)
SLP (dB/V)
0
−60
−40
−20
0
20
40
Pout (dBm)
19
PF08107B
Pout vs Input VSWR
880 MHz VSWR in vs. Pout
4
3.5
3
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
VSWR in
2.5
2
1.5
1
−60
−40
−20
0
20
40
Pout (dBm)
915 MHz VSWR in vs. Pout
4
3.5
3
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
VSWR in
2.5
2
1.5
1
−60
−40
−20
0
20
40
Pout (dBm)
20
PF08107B
Frequency vs Pout, Efficiency – Vdd Dependence
GSM Pout vs. Frequency
37.5
37
36.5
36
35.5
35
Vapc = 2.2 V,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
34.5
34
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
33.5
33
880
890
900
910
920
Frequency (MHz)
GSM Efficiency vs. Frequency
60
55
50
45
40
35
30
Vapc = 2.2 V,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
880
890
900
910
920
Frequency (MHz)
21
PF08107B
Pout – Temperature Dependence
GSM Pout vs. Tc
37.0
36.5
36.0
35.5
35.0
Vapc = 2.2 V,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
f = 880 MHz
f = 915 MHz
34.5
−25
0
25
50
75
Tc (°C)
22
PF08107B
Vapc vs Pout – Vdd Dependence
1710 MHz Pout vs. Vapc
36
35
34
33
32
31
30
29
28
27
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
26
0
0.5
1
1.5
2
2.5
3
Vapc (V)
1785 MHz Pout vs. Vapc
36
35
34
33
32
31
30
29
28
27
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
26
0
0.5
1
1.5
2
2.5
3
Vapc (V)
23
PF08107B
Vapc vs Efficiency – Vdd Dependence
1710 MHz Efficiency vs. Vapc
60
Po = 32 dBm,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
50
40
30
20
10
0
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
0.5
1
1.5
2
2.5
3
Vapc (V)
1785 MHz Efficiency vs. Vapc
60
50
40
30
20
10
0
Po = 32 dBm,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
0.5
1
1.5
2
2.5
3
Vapc (V)
24
PF08107B
Vapc vs Pout – Temperature Dependence
1710 MHz Pout vs. Vapc
40
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω
−20°C
35
30
25
20
15
10
5
25°C
75°C
0
0
0.5
1
1.5
2
2.5
3
Vapc (V)
1785 MHz Pout vs. Vapc
40
35
30
25
20
15
10
5
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
0
0
0.5
1
1.5
2
2.5
3
Vapc (V)
25
PF08107B
Vapc vs Efficiency – Temperature Dependence
1710 MHz Efficiency vs. Vapc
60
50
40
30
20
10
0
Po = 32 dBm,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
−20°C
25°C
75°C
0
0.5
1
1.5
2
2.5
3
Vapc (V)
1785 MHz Efficiency vs. Vapc
60
50
40
30
20
10
0
Po = 32 dBm,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
−20°C
25°C
75°C
0
0.5
1
1.5
2
2.5
3
Vapc (V)
26
PF08107B
Pin vs Pout – Vdd Dependence
1710 MHz Pout vs. Pin
40
35
30
25
20
15
10
5
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
1785 MHz Pout vs. Pin
40
35
30
25
20
15
10
5
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
27
PF08107B
Pin vs Efficiency – Vdd Dependence
1710 MHz Efficiency vs. Pin
60
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
50
40
30
20
10
0
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
−20
−15
−10
−5
0
5
10
Pin (dBm)
1785 MHz Efficiency vs. Pin
60
50
40
30
20
10
0
Vapc = 2.2 V,
Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
−20
−15
−10
−5
0
5
10
Pin (dBm)
28
PF08107B
Pin vs Pout – Temperature Dependence
1710 MHz Pout vs. Pin
40
35
30
25
20
15
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
10
5
−20°C
25°C
75°C
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
1785 MHz Pout vs. Pin
40
35
30
25
20
15
10
5
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
0
−20
−15
−10
−5
0
5
10
Pin (dBm)
29
PF08107B
Pin vs Efficiency – Temperature Dependence
1710 MHz Efficiency vs. Pin
60
50
40
30
20
10
0
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
−20
−15
−10
−5
0
5
10
Pin (dBm)
1785 MHz Efficiency vs. Pin
60
50
40
30
20
10
0
Vapc = 2.2 V,
Vdd = 3.5 V,
Zg = Zl = 50 Ω
−20°C
25°C
75°C
−20
−15
−10
−5
0
5
10
Pin (dBm)
30
PF08107B
Pout vs Efficiency – Vdd Dependence
1710 MHz Efficiency vs. Pout
60
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
50
40
30
20
10
0
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
1785 MHz Efficiency vs. Pout
60
50
40
30
20
10
0
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
31
PF08107B
Pout vs Idd – Vdd Dependence
1710 MHz Idd, Iapc vs. Pout
3
2.5
2
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
Iapc (3.5 V)
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
Pout (dBm)
1785 MHz Idd, Iapc vs. Pout
3
2.5
2
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
Iapc (3.5 V)
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
Pout (dBm)
32
PF08107B
Pout vs Harmonic Distortion – Vdd Dependence
1710 MHz 2fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
1785 MHz 2fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
33
PF08107B
Pout vs Harmonic Distortion – Vdd Dependence
1710 MHz 3fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
1785 MHz 3fo vs. Pout
−35
−40
−45
−50
−55
−60
−65
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
0
5
10
15
20
25
30
35
40
Pout (dBm)
34
PF08107B
Pout vs Slope, AM-AM conversion
1710 MHz AM/AM, Slope vs. Pout
100
500
400
300
200
100
0
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
80
60
40
20
0
AM (%)
SLP (dB/V)
−60
−40
−20
0
20
40
Pout (dBm)
1785 MHz AM/AM, Slope vs. Pout
100
80
60
40
20
0
500
400
300
200
100
0
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω
AM (%)
SLP (dB/V)
−60
−40
−20
0
20
40
Pout (dBm)
35
PF08107B
Pout vs Input VSWR
1710 MHz VSWR in vs. Pout
4
3.5
3
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
VSWR in
2.5
2
1.5
1
−60
−40
−20
0
20
40
Pout (dBm)
1785 MHz VSWR in vs. Pout
4
3.5
3
Vdd = 3.5 V,
Tc = 25°C,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
VSWR in
2.5
2
1.5
1
−60
−40
−20
0
20
40
Pout (dBm)
36
PF08107B
Frequency vs Pout, Efficiency – Vdd Dependence
DCS Pout vs. Frequency
34
33.5
33
32.5
32
31.5
31
Vapc = 2.2 V,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
30.5
30
1710 1720 1730 1740 1750 1760 1770 1780 1790
Frequency (MHz)
DCS Efficiency vs. Frequency
60
Vapc = 2.2 V,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
55
50
45
40
35
30
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
1710 1720 1730 1740 1750 1760 1770 1780 1790
Frequency (MHz)
37
PF08107B
Pout – Temperature Dependence
DCS Pout vs. Tc
34.0
33.5
33.0
32.5
32.0
Vapc = 2.2 V,
Vdd = 3.5 V,
Pin = 0 dBm,
Zg = Zl = 50 Ω,
31.5
f = 1710 MHz
f = 1785 MHz
31.0
−25
0
25
50
75
Tc (°C)
38
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 880 MHz)
f = 880 MHz
Pin = 0 dBm
Vdd = 3.5 V
36.5 dBm
37 dBm
Vapc = 2.2 V
Tc = 25°C
36 dBm
35.5 dBm
35.8 dBm
short
open
35 dBm
50 Ω
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1
VSWR
SMTH CHART
Pout vs. Load impedance (f = 880 MHz)
f = 880 MHz
Pin = 0 dBm
Vdd = 3.5 V
Pout = 35 dbm
Tc = 25°C
35%
short
open
50 Ω
40%
1.2 : 1
50%
45%
1.5 : 1
1.86 : 1
2.33 : 1
SMTH CHART
VSWR
Eff vs. Load impedance (f = 880 MHz)
39
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 915 MHz)
36 dBm
35.5 dBm
36.5 dBm
f = 915 MHz
Pin = 0 dBm
Vdd = 3.5 V
Vapc = 2.2 V
Tc = 25°C
35 dBm
34.5 dBm
34 dBm
33.5 dBm
short
open
50 Ω
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1
VSWR
SMTH CHART
Pout vs. Load impedance (f = 915 MHz)
f = 915 MHz
Pin = 0 dBm
Vdd = 3.5 V
Pout = 35 dBm
Tc = 25°C
45%
47%
50%
52%
short
open
50 Ω
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1
SMTH CHART
VSWR
Eff vs. Load impedance (f = 915 MHz)
40
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 1710 MHz)
33.5 dBm
f = 1710 MHz
Pin = 0 dBm
Vdd = 3.5 V
Vapc = 2.2 V
Tc = 25°C
33 dBm
32.5 dBm
32 dBm
short
open
50 Ω
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1
VSWR
SMTH CHART
Pout vs. Load impedance (f = 1710 MHz)
f = 1710 MHz
Pin = 0 dBm
Vdd = 3.5 V
Pout = 32 dBm
Tc = 25°C
35%
37%
40%
42%
short
open
50 Ω
1.2 : 1
1.5 : 1
45%
1.86 : 1
2.33 : 1
VSWR
SMTH CHART
Eff vs. Load impedance (f = 1710 MHz)
41
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 1785 MHz)
33 dBm
33.5 dBm
f = 1785 MHz
Pin = 0 dBm
Vdd = 3.5 V
Vapc = 2.2 V
Tc = 25°C
32.5 dBm
32 dBm
31.5 dBm
31 dBm
short
open
50 Ω
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1
VSWR
SMTH CHART
Pout vs. Load impedance (f = 1785 MHz)
f = 1785 MHz
Pin = 0 dBm
Vdd = 3.5 V
Pout = 32 dBm
Tc = 25°C
45%
44%
43%
42%
41%
open
50 Ω
40%
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1
SMTH CHART
VSWR
Eff vs. Load impedance (f = 1785 MHz)
42
PF08107B
Package Dimensions
Unit: mm
1.6 ± 0.2
8
1
7
2
G
G
6
3
5
4
G
G
(Upper side)
5
6
G
G
4
7
8
3
G
G
2
1
13.75 ± 0.3
1: Pin GSM
2: Vapc
3: Vdd1
4: Pout GSM
5: Pout DCS
6: Vdd2
(5.375)
(5.375)
(3.275) (3.275)
(1.6) (1.6)
(3.7)
(1.3)
(1.6) (1.6)
7: Vctl
8: Pin DCS
G: GND
(0.7)
(3.7)
(1.4) (2.4)
(2.4)
Remark:
(3.7)
(3.7)
Coplanarity of bottom side of terminals
are less than 0 ± 0.1mm.
(Bottom side)
Hitachi Code
JEDEC
RF-K-8
EIAJ
Mass (reference value)
43
PF08107B
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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(America) Inc.
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Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
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Singapore 049318
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Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
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World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 2.0
44
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