452QS16GE [HITTITE]
InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz; 的InGaP HBT 1瓦的功放， 0.4 - 2.2 GHz的
| 型号： | 452QS16GE |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| 文件： | 总22页 (文件大小：1044K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Typical Applications
Features
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier:
Output IP3: +48 dBm
22.5 dB Gain @ 400 MHz
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
9 dB Gain @ 2100 MHz
53% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
General Description
Functional Diagram
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged
in a miniature 16 lead QSOP plastic package, the
amplifier gain is typically 22.5 dB at 0.4 GHz and 9
dB at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G & HMC452QS16GE ideal power
amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed
Wireless applications.
Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter
Frequency Range
Gain
Min.
Typ.
400 - 410
22.5
Max. Min.
Typ.
450 - 496
21.5
Max. Min.
Typ.
810 - 960
15.5
Max. Min.
Typ.
Max. Min. Typ. Max. Units
1710 - 1990
10
2010 - 2170
9
MHz
dB
20
19
13
7.5
6.5
Gain Variation Over
Temperature
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02 dB/C
Input Return Loss
13
7
15
8
9
17
15
11
20
dB
dB
Output Return Loss
12
Output Power for 1dB
Compression (P1dB)
27.5
40
30.5
31
27.5
41
30.5
31
27
45
30
31
48
28
45
31
31.5
48
28
45
31
32.5
48
dBm
dBm
dBm
Saturated Output
Power (Psat)
Output Third Order
43
44
[2]
Intercept (IP3)
Noise Figure
7
7
7
7
7.5
485
10
dB
mA
mA
Supply Current (Icq)
Control Current (IPD)
485
10
485
10
485
10
485
10
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 252
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 400 MHz
5
Gain vs. Temperature @ 400 MHz
25
25
24
23
22
21
20
19
20
15
10
5
S21
S11
S22
+25 C
18
+85 C
17
0
-40 C
16
15
14
13
12
-5
-10
-15
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.35
0.37
0.39
0.41
0.43
0.45
0.45
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
Output Return Loss
vs. Temperature @ 400 MHz
0
0
-2
-2
-4
-4
-6
+25 C
+85 C
-40 C
-6
-8
-8
-10
-12
-14
-16
-10
-12
-14
-16
+25 C
+85 C
-40 C
0.35
0.37
0.39
0.41
0.43
0.45
0.35
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature @ 400 MHz
Psat vs. Temperature @ 400 MHz
34
33
32
31
30
34
33
32
31
30
29
29
+25 C
+25 C
28
27
26
25
24
28
27
26
25
24
+85 C
-40 C
+85 C
-40 C
0.35
0.37
0.39
0.41
0.43
0.45
0.35
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 253
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Output IP3 vs. Temperature @ 400 MHz
Noise Figure vs. Temperature @ 400 MHz
50
48
46
44
42
40
10
9
8
7
6
5
+25 C
38
4
3
2
1
0
+85 C
-40 C
+25 C
36
34
32
30
+85 C
-40 C
0.35
0.37
0.39
0.41
0.43
0.45
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation
Gain, Power & IP3
vs. Temperature @ 400 MHz
vs. Supply Voltage @ 400 MHz
0
50
45
40
35
30
25
20
-5
-10
-15
-20
-25
-30
-35
+25 C
+85 C
-40 C
Gain
P1dB
Psat
OIP3
15
10
4.5
0.35
0.37
0.39
0.41
0.43
0.45
4.75
5
5.25
5.5
FREQUENCY (GHz)
Vs (Vdc)
ACPR vs. Supply Voltage @ 400 MHz
W-CDMA , 64 DPCH
Power Compression @ 400 MHz
55
-10
-15
50
Pout
-20
45
40
35
30
25
20
15
10
5
Gain
PAE
W-CDMA
Frequency: 400 MHz
Integration BW: 3.84 MHz
64 DPCH
-25
-30
-35
4.5V
5V
-40
5.5V
-45
-50
-55
-60
-65
Source ACPR
0
-70
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
8
10
12
14
16
18
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 254
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 470 MHz
5
Gain vs. Temperature @ 470 MHz
25
24
23
22
21
20
19
20
15
10
5
S21
S11
S22
18
+25 C
17
16
15
14
13
12
+85 C
-40 C
0
-5
-10
-15
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.43
0.45
0.47
0.49
0.51
0.53
0.53
0.53
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 470 MHz
Output Return Loss
vs. Temperature @ 470 MHz
0
-2
-4
0
-2
-4
-6
+25 C
-6
-8
-10
-12
-14
-16
-18
-20
+85 C
-40 C
-8
-10
-12
-14
-16
+25 C
+85 C
-40 C
0.43
0.45
0.47
0.49
0.51
0.53
0.43
0.45
0.47
0.49
0.51
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature @ 470 MHz
Psat vs. Temperature @ 470 MHz
34
33
32
31
30
29
34
33
32
31
30
29
+25 C
28
28
27
26
25
24
+85 C
-40 C
+25 C
27
26
25
24
+85 C
-40 C
0.43
0.45
0.47
0.49
0.51
0.53
0.43
0.45
0.47
0.49
0.51
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 255
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Output IP3 vs. Temperature @ 470 MHz
Noise Figure vs. Temperature @ 470 MHz
50
48
46
44
42
10
9
8
7
6
40
5
+25 C
+25 C
38
36
34
32
30
4
3
2
1
0
+85 C
-40 C
+85 C
-40 C
0.43
0.45
0.47
0.49
0.51
0.53
0.43
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation
Gain, Power & IP3
vs. Temperature @ 470 MHz
vs. Supply Voltage @ 470 MHz
0
50
45
40
35
30
25
20
-5
-10
-15
+25 C
+85 C
-20
-40 C
-25
-30
-35
-40
Gain
P1dB
Psat
OIP3
15
10
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
4.5
4.75
5
5.25
5.5
FREQUENCY (GHz)
Vs (Vdc)
ACPR vs. Supply Voltage @ 470 MHz
W-CDMA, 64 DPCH
Power Compression @ 470 MHz
55
-10
-15
50
Pout
-20
45
40
35
30
25
20
15
10
5
Gain
PAE
W-CDMA
Frequency: 470 MHz
Integration BW: 3.84 MHz
-25
-30
64 DPCH
-35
-40
4.5V
-45
-50
-55
-60
-65
-70
5V
5.5V
Source ACPR
0
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
8
10
12
14
16
18
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 256
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 900 MHz
5
Gain vs. Temperature @ 900 MHz
20
18
17
16
15
14
15
10
S21
S11
S22
5
0
13
+25 C
12
11
10
9
+85 C
-40 C
-5
-10
-15
-20
8
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.05
1.05
1.1
1.1
1.1
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
Output Return Loss
vs. Temperature @ 900 MHz
vs. Temperature @ 900 MHz
0
0
-2
+25 C
+85 C
-40 C
-5
-10
-15
-20
-25
-4
-6
+25 C
+85 C
-40 C
-8
-10
-12
-14
-16
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature @ 900 MHz
Psat vs. Temperature @ 900 MHz
34
32
30
28
34
32
30
28
26
24
22
20
18
+25 C
+85 C
-40 C
26
24
22
20
18
+25 C
+85 C
-40 C
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 257
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Output IP3 vs. Temperature @ 900 MHz
Noise Figure vs. Temperature @ 900 MHz
50
48
46
44
42
10
9
8
7
6
40
5
+25 C
38
36
34
32
30
4
+85 C
-40 C
+25 C
3
2
1
0
+85 C
-40 C
0.75
0.8
0.85
0.9
0.95
1
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation
Gain, Power & IP3
vs. Temperature @ 900 MHz
vs. Supply Voltage @ 900 MHz
50
0
45
40
35
30
-5
-10
+25 C
+85 C
-40 C
-15
-20
-25
-30
25
20
15
10
Gain
P1dB
Psat
OIP3
4.5
4.75
5
5.25
5.5
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
Vs (Vdc)
FREQUENCY (GHz)
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
55
50
45
40
35
30
25
20
15
10
-25
-30
CDMA IS95
-35
Frequency: 910 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
Gain
-40
P1dB
Psat
5V
OIP3
-45
-50
-55
-60
-65
-70
4.5V
5.5V
Source ACPR
250
300
350
400
Icq (mA)
450
500
12
14
16
18
20
22
24
26
28
Channel Power (dBm)
* Icq is controlled by varying VPD.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 258
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 1900 MHz
5
Gain vs. Temperature @ 1900 MHz
15
13
12
11
10
9
10
5
0
S21
S11
S22
8
7
-5
6
+25 C
5
-10
-15
-20
-25
+85 C
4
-40 C
3
2
1
0
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
1.7
1.8
1.9
2
2.1
2.1
2.1
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 1900 MHz
Output Return Loss
vs. Temperature @ 1900 MHz
0
0
-5
-10
-15
-20
-25
-30
-35
-40
+25 C
+85 C
-40 C
-5
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
1.7
1.8
1.9
FREQUENCY (GHz)
2
2.1
1.7
1.8
1.9
2
FREQUENCY (GHz)
P1dB vs. Temperature @ 1900 MHz
Psat vs. Temperature @ 1900 MHz
34
33
32
31
30
29
34
33
32
31
30
29
28
28
+25 C
+25 C
27
26
25
24
27
26
25
24
+85 C
-40 C
+85 C
-40 C
1.7
1.8
1.9
FREQUENCY (GHz)
2
2.1
1.7
1.8
1.9
FREQUENCY (GHz)
2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 259
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Noise Figure vs.
Temperature @ 1900 MHz
5
Output IP3 vs. Temperature @ 1900 MHz
52
50
48
46
44
42
40
10
9
8
7
6
5
4
38
+25 C
+25 C
3
2
1
0
+85 C
-40 C
36
34
32
30
+85 C
-40 C
1.7
1.8
1.9
FREQUENCY (GHz)
2
2.1
2.1
500
1.7
1.8
1.9
FREQUENCY (GHz)
2
2.1
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Reverse Isolation
vs. Temperature @ 1900 MHz
55
50
45
40
35
30
0
+25 C
-5
+85 C
-40 C
-10
25
Gain
P1dB
20
15
Psat
-15
-20
OIP3
10
5
4.5
4.75
5
5.25
5.5
1.7
1.8
1.9
2
Vs (Vdc)
FREQUENCY (GHz)
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
-25
50
45
40
35
30
25
-30
CDMA2000
-35
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-40
-45
5V
5.5V
4.5V
-50
-55
-60
-65
-70
20
15
10
5
Gain
P1dB
Psat
OIP3
Source ACPR
22
14
16
18
20
24
26
28
250
300
350
400
450
Channel Power (dBm)
Icq (mA)
* Icq is controlled by varying VPD.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 260
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 2100 MHz
5
Gain vs. Temperature @ 2100 MHz
15
13
12
11
10
9
10
5
0
S21
S11
S22
8
7
-5
6
5
-10
-15
-20
-25
+25C
4
3
2
1
0
+85C
-40C
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
2.3
2.3
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 2100 MHz
Output Return Loss
vs. Temperature @ 2100 MHz
0
0
-2
-5
-4
-6
+25C
+85C
-40C
+25C
+85C
-40C
-10
-15
-20
-25
-30
-8
-10
-12
-14
-16
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
1.9
2
2.1
FREQUENCY (GHz)
2.2
P1dB vs. Temperature @ 2100 MHz
Psat vs. Temperature @ 2100 MHz
34
33
32
31
30
34
33
32
31
30
29
29
+25C
+25C
28
27
26
25
24
28
27
26
25
24
+85C
-40C
+85C
-40C
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
1.9
2
2.1
FREQUENCY (GHz)
2.2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 261
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Noise Figure vs.
Temperature @ 2100 MHz
5
Output IP3 vs. Temperature @ 2100 MHz
54
52
50
48
46
44
42
10
9
8
7
6
5
+25C
40
4
3
2
1
0
+25C
+85C
-40C
38
36
34
32
30
+85C
-40C
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
Reverse Isolation
Gain, Power & IP3
vs. Temperature @ 2100 MHz
vs. Supply Voltage @ 2100 MHz
55
50
45
40
35
30
25
0
+25C
-5
+85C
-40C
-10
Gain
P1dB
Psat
OIP3
20
15
10
5
-15
-20
4.5
4.75
5
5.25
5.5
1.9
2
2.1
2.2
2.3
Vs (Vdc)
FREQUENCY (GHz)
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH
Power Compression @ 2100 MHz
55
50
-20
Pout
4.5V
45
Gain
-25
PAE
40
W-CDMA
-30
Frequency: 2.14 GHz
5V
35
30
25
20
15
10
5
Integration BW: 3.84 MHz
64 DPCH
-35
-40
-45
-50
-55
-60
-65
5.5V
0
Source ACPR
10
12
14
16
18
20
22
24
26
28
12
14
16
18
20
22
24
26
28
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 262
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Power Dissipation
Absolute Maximum Ratings
3
Collector Bias Voltage (Vcc)
+6.0 Vdc
+5.3 Vdc
Max Pdiss @ +85C
Control Voltage (Vpd)
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +31 dBm
2.5
2
1900 MHz
Junction Temperature
150 °C
2.7 W
Continuous Pdiss (T = 85 °C)
(derate 41.5 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
24.1 °C/W
1.5
1
900 MHz
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1A
-5
0
5
10
15
20
INPUT POWER (dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H452
XXXX
HMC452QS16G
HMC452QS16GE
Low Stress Injection Molded Plastic
Sn/Pb Solder
H452
XXXX
MSL1 [2]
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 263
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5,
7-10, 13-16
These pins & package bottom must be connected to
RF/DC ground.
GND
Power control pin. For maximum power, this pin should be
connected to 5.0V. A higher voltage is not recommended.
For lower idle current, this voltage can be reduced.
3
VPD
This pin is DC coupled.
Off chip matching components are required.
See Application Circuit herein.
6
RFIN
RF output and DC Bias input for the output amplifier stage.
Off chip matching components are required.
See Application Circuit herein.
11, 12
RFOUT
400 MHz Application Circuit
This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
Recommended Component Values
C1, C2
C3, C7
C4, C5
C6
12 pF
100 pF
6.8 pF
39 pF
Note: C3 should be placed as close to pins as possible.
C8, C9
L1
2.2 μF
47 nH
TL1
50 Ohm
0.11”
TL2
50 Ohm
0.06”
2°
TL3
50 Ohm
0.12”
3°
TL4
50 Ohm
0.04”
1°
TL5
50 Ohm
0.16”
4°
L2
40 nH
Impedance
L3
4.7 nH
5.6 nH
5.1 Ohms
Physical Length
Electrical Length
L4
3°
R1
PCB Material: 10 mil Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 264
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
400 MHz Evaluation PCB
List of Materials for Evaluation PCB 110380-400 [1]
The circuit board used in this application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA Connector
2 mm DC Header
C1, C2
C3, C7
C4, C5
C6
12 pF Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
6.8 pF Capacitor, 0402 Pkg.
39 pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, Tantalum
47 nH Inductor, 0603 Pkg.
40 nH Inductor, 0402 Pkg.
4.7 nH Inductor, 0402 Pkg.
5.6 nH Inductor, 0402 Pkg.
5.1 Ohm Resistor, 0402 Pkg.
C8, C9
L1
L2
L3
L4
R1
HMC452QS16G / HMC452QS16GE
Linear Amp
U1
[2]
PCB
110378 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 265
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
470 MHz Application Circuit
This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
Note: C3 should be placed as close to pins as possible.
Recommended Component Values
TL1
50 Ohm
0.11”
TL2
50 Ohm
0.06”
2°
TL3
50 Ohm
0.12”
3°
TL4
50 Ohm
0.04”
1°
TL5
50 Ohm
0.16”
4°
C1, C2
C3, C7
C4
12 pF
100 pF
6.8 pF
5.6 pF
39 pF
Impedance
Physical Length
Electrical Length
3°
C5
PCB Material: 10 mil Rogers 4350, Er = 3.48
C6
C8, C9
L1
2.2 μF
47 nH
L2
40 nH
L3
3.9 nH
4.3 nH
5.1 Ohms
L4
R1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 266
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
470 MHz Evaluation PCB
List of Materials for Evaluation PCB 110381-470 [1]
The circuit board used in this application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA Connector
2 mm DC Header
C1, C2
C3, C7
C4
12 pF Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
6.8 pF Capacitor, 0402 Pkg.
5.6 pF Capacitor, 0402 Pkg.
39 pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, Tantalum
47 nH Inductor, 0603 Pkg.
40 nH Inductor, 0402 Pkg.
3.9 nH Inductor, 0402 Pkg.
4.3 nH Inductor, 0402 Pkg.
5.1 Ohm Resistor, 0402 Pkg.
C5
C6
C8, C9
L1
L2
L3
L4
R1
HMC452QS16G / HMC452QS16GE
Linear Amp
U1
[2]
PCB
110378 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 267
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
900 MHz Application Circuit
This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
Note: C3 should be placed as close to pins as possible.
TL1
50 Ohm
0.21”
11°
TL2
50 Ohm
0.19”
TL3
50 Ohm
0.23”
12°
Recommended Component Values
Impedance
C1
C2, C6
C3, C7
C4
10 pF
5.6 pF
100 pF
2.2 pF
5 pF
Physical Length
Electrical Length
10°
PCB Material: 10 mil Rogers 4350, Er = 3.48
C5
C8, C9
L1, L2
R1
2.2 μF
20 nH
5.6 Ohm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 268
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
900 MHz Evaluation PCB
List of Materials for Evaluation PCB 108715-900 [1]
The circuit board used in this application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA Connector
2 mm DC Header
C1
10 pF Capacitor, 0402 Pkg.
5.6 pF Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
2.2 pF Capacitor, 0402 Pkg.
5 pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, Tantalum
20 nH Inductor, 0402 Pkg.
5.6 Ohm Resistor, 0402 Pkg.
C2, C6
C3, C7
C4
C5
C8, C9
L1, L2
R1
HMC452QS16G / HMC452QS16GE
Linear Amp
U1
[2]
PCB
108713 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 269
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
1900 MHz Application Circuit
This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC
Applications Group for assistance in optimizing performance for your application.
Note: C2, C3 and C4 should be placed as close to pins as possible.
Recommended Component Values
TL1
50 Ohm
0.04”
4°
TL2
50 Ohm
0.08”
9°
C1
C2
2.7 pF
2 pF
Impedance
Physical Length
Electrical Length
C3, C5, C6
C4
100 pF
3.3 pF
2.2 μF
20 nH
PCB Material: 10 mil Rogers 4350, Er = 3.48
C7, C8
L1, L2
R1
5.6 Ohms
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 270
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
1900 MHz Evaluation PCB
List of Materials for Evaluation PCB 108703-1900 [1]
The circuit board used in this application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
Description
J1 - J2
J3
PCB Mount SMA Connector
2 mm DC Header
C1
2.7 pF Capacitor, 0402 Pkg.
2 pF Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
3.3 pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, Tantalum
20 nH Inductor, 0402 Pkg.
5.6 Ohm Resistor, 0402 Pkg.
C2
C3, C5, C6
C4
C7, C8
L1, L2
R1
HMC452QS16G / HMC452QS16GE
Linear Amp
U1
[2]
PCB
108701 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 271
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
2100 MHz Application Circuit
This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC
Applications Group for assistance in optimizing performance for your application.
Note: C2, C3 and C4 should be placed as close to pins as possible.
Recommended Component Values
TL1
50 Ohm
0.04”
5°
TL2
50 Ohm
0.08”
10°
C1
C2
4.7 pF
2 pF
Impedance
Physical Length
Electrical Length
C3, C6
C4
100 pF
3.3 pF
15 pF
PCB Material: 10 mil Rogers 4350, Er = 3.48
C5
C7, C8
L1
2.2 μF
12 nH
L2
10 nH
R1
5.1 Ohms
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 272
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
2100 MHz Evaluation PCB
List of Materials for Evaluation PCB 111041-2100 [1]
The circuit board used in this application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA Connector
2 mm DC Header
C1
4.7 pF Capacitor, 0402 Pkg.
2 pF Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
3.3 pF Capacitor, 0402 Pkg.
15 pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, Tantalum
12 nH Inductor, 0402 Pkg.
10 nH Inductor, 0402 Pkg.
5.1 Ohm Resistor, 0402 Pkg.
C2
C3, C6
C4
C5
C7, C8
L1
L2
R1
HMC452QS16G / HMC452QS16GE
Linear Amp
U1
[2]
PCB
111039 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 273
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