HMC-XDB112 [HITTITE]
GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT; 砷化镓被动倍频， 10 - 15 GHz的输入
| 型号： | HMC-XDB112 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT |
| 文件： | 总6页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Typical Applications
This HMC-XDB112 is ideal for:
Features
Conversion Loss: 13 dB
Passive: No DC Bias Required
Input Drive: +13 dBm
• Point-to-Point Radios
• VSAT
2
High Fo Isolation: 30 dB
Die Size: 2.2 x 0.65 x 0.1 mm
• Test Instrumentation
• Military & Space
• Clock Generation
General Description
Functional Diagram
The HMC-XDB112 is a monolithic Passive Frequency
Doubler which utilizes GaAs Heterojunction Bipolar
Transistor (HBT) technology, and is targeted to high
volume applications where frequency doubling of a
lower frequency is more economical than directly
generating a higher frequency. All bond pads and
the die backside are Ti/Au metallized and the HBT
devices are fully passivated for reliable operation. The
HMC-XDB112 Passive Doubler MMIC is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications*, TA = 25 °C, Pin = +13 dBm
Parameter
Min.
Typ.
10 - 15
20 - 30
13
Max.
Units
GHz
GHz
dB
Frequency Range Input
Frequency Range Output
Conversion Loss
Fo Isolation with respect to output
*Unless otherwise indicated, all measurements are from probed die
30
dB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Output Power
Conversion Loss
0
5
0
-2
-5
2
-4
-10
-6
-15
-20
Fin
2xFin
-8
-10
-12
-14
-16
-18
-20
-25
-30
-35
-40
-45
-50
10
11
12
13
14
15
10
11
12
13
14
15
FREQUENCY (GHz)
INPUT FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 69
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Outline Drawing
2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE .002”
Standard
Alternate
WP - 4
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 70
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
2
1
RFIN
RFOUT
GND
This pad is AC coupled and matched to 50 Ohms.
2
This pad is AC coupled and matched to 50 Ohms.
Die Bottom must be connected to RF/DC ground.
Die Bottom
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 71
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Assembly Diagram
2
Note 1: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 72
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
2
Wire Bond
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD pro-
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 73
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