HMC286 [HITTITE]
GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz; 砷化镓MMIC低噪声放大器, 2.3 - 2.5 GHz的型号: | HMC286 |
厂家: | HITTITE MICROWAVE CORPORATION |
描述: | GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz |
文件: | 总6页 (文件大小:153K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HMC286
v02.0204
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
Typical Applications
Features
8
The HMC286 is ideal for:
• BlueTooth
2.4 GHz LNA
Noise Figure: 1.7 dB
Gain: 19 dB
• Home RF
• 802.11 WLAN Radios
• PCMCIA Platforms
Single Supply: +3V
No External Components
Ultra Small SOT26 Package
Functional Diagram
General Description
The HMC286 is a low cost Low Noise Amplifier (LNA)
for 2.3 to 2.5 GHz spread spectrum applications. The
LNA provides 19 dB of gain and a 1.7 dB noise figure
from a single positive +3V power supply that consumes
only 8.5mA. The typical output 1 dB compression point
is +6 dBm at 2.4 GHz. The compact LNA design uti-
lizes on-chip matching for repeatable gain and noise
figure performance. In addition, eliminating the external
matching circuitry also reduces the overall size of the
LNA function. The HMC286 was designed to meet the
size constraints of PCMCIA platforms and uses the
SOT26 package that occupies 0.118” x 0.118”, which
makes it a small fully integrated solution that can be
easily implemented with other 2.4 GHz ASICs.
Electrical Specifications, TA = +25° C, Vdd= +3V
Parameter
Min.
Typ.
2.3 - 2.5
19
Max.
Units
GHz
dB
Frequency Range
Gain
16
Gain Variation Over Temperature
Gain Flatness
0.015
1.25
1.7
0.03
2.5
dB/°C
dB
Noise Figure
dB
Input Return Loss
Output Return Loss
12
dB
4.5
dB
Output 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Supply Current (Idd)
2
9
6
dBm
dBm
mA
12
8.5
12.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 22
v02.0204
HMC286
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
Broadband Gain & Return Loss
Broadband Noise Figure
8
25
20
15
10
5
4
3.5
3
S21
S11
S22
2.5
2
0
-5
1.5
1
-10
-15
-20
-25
0.5
0
1.6
1.8
2
2.2
2.4
2.6
2.8
3
2.6
2.6
1.6
1.8
2
2.2
2.4
2.6
2.8
3
2.6
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs.Temperature
Gain vs.Temperature
24
4
23
22
21
20
19
18
17
16
15
14
3.5
3
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
2.5
2
1.5
1
0.5
0
2.2
2.3
2.4
2.5
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
-1
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
-5
-2
-3
-10
-15
-20
-25
-4
-5
-6
-7
-8
-9
-10
2.2
2.3
2.4
2.5
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 23
v02.0204
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
MICROWAVE CORPORATION
Output P1dB vs.Temperature
Power Compression @ 2.4 GHz
8
15
25
20
15
10
5
Gain
Output Power
10
5
+25 C
+85 C
-40 C
0
-5
0
-5
-10
2.2
2.3
2.4
2.5
2.6
-30
-25
-20
-15
-10
-5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
-20
Output IP3 vs.Temperature
20
+25 C
+85 C
-40 C
15
10
5
-25
-30
+25 C
+85 C
-40 C
-35
-40
0
2.2
2.3
2.4
2.5
2.6
2.2
2.3
2.4
2.5
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 24
v02.0204
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
MICROWAVE CORPORATION
Absolute Maximum Ratings
8
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.35 mW/°C above 85 °C)
0.413 W
Thermal Resistance
(channel to lead)
157 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 25
v02.0204
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
MICROWAVE CORPORATION
Pad Descriptions
8
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is AC coupled and matched to 50 Ohms.
These pins must be connected to RF/DC ground.
2, 5, 6
GND
3
4
VDD
Power supply voltage.
RFOUT
This pin is AC coupled and matched to 50 Ohms.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 26
v02.0204
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
MICROWAVE CORPORATION
Evaluation PCB
8
List of Material for Evaluation PCB 103743*
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have 50
ohm impedance while the package ground leads should be
connected directly to the ground plane similar to that shown
above. A sufficient number of VIA holes should be used to
connect the top and bottom ground planes. The evaluation
circuit board shown is available from Hittite upon request.
Item
Description
J1, J2
J3, J4
U1
PC Mount SMA Connector
DC Pin
HMC286 Amplifier
103741 Eval Board
PCB**
**Circuit Board Material: Roger 4350
*Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 27
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