HMC287MS8TR [HITTITE]

Narrow Band Low Power Amplifier,;
HMC287MS8TR
型号: HMC287MS8TR
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

Narrow Band Low Power Amplifier,

射频 微波
文件: 总6页 (文件大小:189K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HMC287MS8 / 287MS8E  
v02.0605  
GaAs MMIC LOW NOISE AMPLIFIER  
with AGC, 2.3 - 2.5 GHz  
4
Typical Applications  
Features  
LNA for Spread Spectrum Applications:  
Gain: 21 dB  
• BLUETOOTH  
Noise Figure: 2.5 dB  
Gain Adjustment: 30 dB  
Single Positive Supply: +3V  
No External Components  
Ultra Small Package: MSOP8G  
• HomeRF  
• 802.11 WLAN  
• 2.5 GHz Radios  
Functional Diagram  
General Description  
The HMC287MS8 & HMC287MS8E are low cost  
Low Noise Amplifiers (LNA) offering 21 dB of gain  
and a 2.5 dB noise figure from a single positive +3V  
supply that requires only 9 mA. The HMC287MS8 &  
HMC287MS8E can be used as variable gain LNAs,  
offering 30 dB of gain control, which is controlled  
with 0 to 3V analog voltages. The typical output 1 dB  
compression point is +3 dBm and OIP3 is +7 dBm  
when in the maximum gain state. The compact LNA  
design utilizes on-chip matching for repeatable gain  
and noise figure performance and eliminates the need  
for external matching circuitry to reduce the overall  
size of the LNA function.  
Electrical Specifications, TA = +25° C, Vdd= +3V  
Parameter  
Min.  
15  
Typ.  
Max.  
Units  
GHz  
dB  
Frequency Range  
2.3 - 2.5  
Gain  
21  
0.03  
30  
2.5  
10  
6
27  
Gain Variation Over Temperature  
Gain Adjustment Range (Vctl 0 to +3V)  
Noise Figure (Vctl = 0V)  
0.04  
dB/°C  
dB  
3.0  
dB  
Input Return Loss  
5
3
dB  
Output Return Loss  
dB  
Output 1 dB Compression (P1dB)  
Output Third Order Intercept (IP3)  
Control Voltage (Vctl)  
-2  
3
3
dBm  
dBm  
Vdc  
mA  
7
0
Vdd  
15  
Supply Current (Idd)(Vdd = +3.0 Vdc)  
9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 8  
HMC287MS8 / 287MS8E  
v02.0605  
GaAs MMIC LOW NOISE AMPLIFIER  
with AGC, 2.3 - 2.5 GHz  
Broadband Gain  
& Return Loss, Vctl = 0V  
4
Gain Over Control Voltage Range  
35  
25  
0V  
20  
25  
15  
5
15  
1.2V  
10  
S21  
S11  
S22  
5
1.8V  
2.4V  
0
-5  
-5  
-15  
3V  
-10  
-25  
-15  
1.6  
1.8  
2
2.2  
2.4  
2.6  
2.8  
3
2.2  
2.3  
2.4  
2.5  
2.5  
2.5  
2.6  
2.6  
2.6  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Noise Figure  
vs. Temperature, Vctl = 0V  
Gain vs. Temperature, Vctl = 0V  
30  
5
+25 C  
4
3
2
1
0
+85 C  
-40 C  
25  
20  
+ 85 C  
15  
10  
-40 C  
+25 C  
2.2  
2.3  
2.4  
FREQUENCY (GHz)  
2.5  
2.6  
2.2  
2.3  
2.4  
FREQUENCY (GHz)  
Input Return Loss  
vs. Temperature, Vctl = 0V  
Output Return Loss  
vs. Temperature, Vctl = 0V  
0
0
+85 C  
-40 C  
+25 C  
-5  
-10  
-15  
-20  
-5  
-10  
+85 C  
-40 C  
+25 C  
-15  
-20  
2.2  
2.3  
2.4  
2.5  
2.6  
2.2  
2.3  
2.4  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 9  
HMC287MS8 / 287MS8E  
v02.0605  
GaAs MMIC LOW NOISE AMPLIFIER  
with AGC, 2.3 - 2.5 GHz  
4
Gain vs. Control Voltage @ 2.4 GHz  
Power Compression @ 2.4 GHz, Vctl = 0V  
26  
26  
20  
14  
8
20  
Output Power (dBm)  
14  
Gain (dB)  
8
2
2
-4  
-4  
-10  
-10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10  
Control Voltage (Vdc)  
Input Power (dBm)  
Input Return Loss  
Output Return Loss  
Over Control Voltage Range  
Over Control Voltage Range  
0
0
-5  
-10  
-15  
-5  
0V  
-10  
1.0V  
-20  
Vctl= 3V  
-25  
3V  
Vctl= 1V  
-15  
Vctl= 0V  
-30  
-35  
-20  
2.2  
2.3  
2.4  
2.5  
2.6  
2.2  
2.3  
2.4  
2.5  
2.6  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation  
vs. Temperature, Vctl = 0V  
Noise Figure and  
Output IP3 vs. Control Voltage  
-30  
Frequency = 2.4 GHz  
VCTL  
0V  
Noise Figure  
OIP3 (dBm)*  
-35  
-40  
-45  
2.5  
4.0  
7.1  
1.7V  
3.0V  
-4.4  
-12.9  
10.0  
* Two-tone input power = -30 dBm per tone.  
+85 C  
-50  
-55  
-60  
-40 C  
+25 C  
2.2  
2.3  
2.4  
FREQUENCY (GHz)  
2.5  
2.6  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 10  
HMC287MS8 / 287MS8E  
v02.0605  
GaAs MMIC LOW NOISE AMPLIFIER  
with AGC, 2.3 - 2.5 GHz  
4
Absolute Maximum Ratings  
Gain Control  
Drain Bias Voltage (Vdd)  
+7 Vdc  
Typical  
Ictl (uA)  
Vctl (Vdc)  
Gain State  
Control Voltage Range (Vctl)  
RF Input Power (RFIN)(Vdd = +3 Vdc)  
Channel Temperature  
-0.2V to Vdd  
-7 dBm  
0.0  
1.5  
Maximum  
Middle  
25  
25  
150 °C  
Vdd  
Minimum  
25  
Continuous Pdiss (T = 85 °C)  
(derate 5.62 mW/°C above 85 °C)  
0.365 W  
Thermal Resistance  
(channel to lead)  
178 °C/W  
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-40 to +85 °C  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Outline Drawing  
NOTES:  
1. LEADFRAME MATERIAL: COPPER ALLOY  
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
H287  
XXXX  
HMC287MS8  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
H287  
XXXX  
MSL1 [2]  
HMC287MS8E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 11  
HMC287MS8 / 287MS8E  
v02.0605  
GaAs MMIC LOW NOISE AMPLIFIER  
with AGC, 2.3 - 2.5 GHz  
4
Evaluation PCB  
List of Materials for Evaluation PCB 103739 [1]  
The circuit board used in the final application should  
use RF circuit design techniques. Signal lines  
should have 50 ohm impedance while the package  
ground leads and exposed paddle should be con-  
nected directly to the ground plane similar to that  
shown. A sufficient number of via holes should be  
used to connect the top and bottom ground planes.  
The evaluation circuit board shown is available from  
Hittite upon request.  
Item  
J1, J2  
J3, J4  
U1  
Description  
PCB Mount SMA Connector  
DC Pin  
HMC287MS8 / HMC287MS8E Amplifier  
Evaluation Board 1.6” x 1.5”  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 12  
HMC287MS8 / 287MS8E  
v02.0605  
GaAs MMIC LOW NOISE AMPLIFIER  
with AGC, 2.3 - 2.5 GHz  
4
Notes:  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 13  

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