HMC315 [HITTITE]
GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz; 砷化镓的InGaP HBT MMIC放大器达林顿， DC - 7.0 GHz的
| 型号： | HMC315 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz |
| 文件： | 总6页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC315
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Typical Applications
Features
8
The HMC315 is ideal for:
Saturated Output Power: +17 dBm
Output IP3: +33 dBm
• Fiber Optic OC-48 Systems
• Microwave Test Instrumentation
• Broadband Mobile Radio Platforms
Gain: 15 dB
Single Supply: +5V to +7V
Ultra Small Package: SOT26
Functional Diagram
General Description
The HMC315 is an ultra broadband GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifier that operates from a single positive
supply. The surface mount SOT26 amplifier can
be used as a broadband gain stage, or used
with external matching for optimized narrow band
applications. The Darlington configuration results
in reduced sensitivity to normal process varia-
tions and provides a good 50-ohm input/output
port match. The amplifier provides 15 dB of gain
and +17 dBm of saturated power while operating
from a single positive +7V supply.
Electrical Specifications, TA = +25° C, As a Function of Vcc
Vcc = +5V
Vcc = +7V
Typ.
DC - 7
15
Parameter
Units
Min.
11
Typ.
DC - 7
14
Max.
Min.
11
Max.
Frequency Range
GHz
dB
Gain
17
18
Gain Variation over Temperature
Input Return Loss
0.015
10
0.025
0.015
10
0.025
dB/°C
dB
7
3
7
Output Return Loss
7
3
7
dB
Reverse Isolation
18
8
21
18
13
15
30
21
dB
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (OIP3) @ 1.0 GHz
Noise Figure
11
16
dBm
dBm
dBm
dB
10
23
13
17.5
33
26
6.5
30
6.5
Supply Current (Icc)
50
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 80
HMC315
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Gain & Return Loss @ Vcc= +7V
Gain & Return Loss @ Vcc= +5V
8
20
15
10
20
15
10
S11
S11
5
0
5
0
S21
S22
S21
S22
-5
-5
-10
-15
-20
-25
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain vs.Temperature @ Vcc= +7V
Gain vs.Temperature @ Vcc= +5V
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
+25C
+60C
-40C
+25C
+60C
-40C
4
2
0
4
2
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input & Output
Return Loss vs. Vcc Bias
Reverse Isolation vs. Vcc Bias
0
0
S12 Vcc=7V
S12 Vcc=5V
-5
-10
-15
-20
-25
-30
-5
-10
-15
S11 Vcc=7V
S22 Vcc=7V
S11 Vcc=5V
S22 Vcc=5V
-20
-25
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 81
v01.0701
HMC315
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
P1dB vs.Temperature @ Vcc= +7V
P1dB vs.Temperature @ Vcc= +5V
8
20
18
16
14
12
10
8
20
18
+25C
16
14
12
10
8
+60C
-40C
6
6
+25C
+60C
-40C
4
2
4
2
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs.Temperature @ Vcc= +7V
Psat vs.Temperature @ Vcc= +5V
20
18
16
14
12
10
8
20
18
+25C
+60C
-40C
16
14
12
10
8
6
6
+25C
+60C
-40C
4
2
4
2
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs.
Output IP3 vs.
Temperature @ Vcc= +7V
Temperature @ Vcc= +5V
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
+25C
+60C
-40C
+25C
+60C
-40C
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 82
v01.0701
HMC315
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Power Compression
@ 1.0 GHz, Vcc= +7V
Power Compression
@ 1.0 GHz, Vcc= +5V
8
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression
@ 3.0 GHz, Vcc= +7V
Power Compression
@ 3.0 GHz, Vcc= +5V
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
Pout
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
INPUT POWER (dBm)
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 83
HMC315
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Application Circuit
Absolute Maximum Ratings
8
Collector Bias Voltage (Vcc)
+7.5 Vdc
RF Input Power (RFin)(Vcc = +7.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 60 °C)
(derate 4.14 mW/°C above 60 °C)
0.373 W
Thermal Resistance
(junction to lead)
242 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +60 °C
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 84
HMC315
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Evaluation PCB
8
List of Material
The circuit board used in the final application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads should be con-
nected directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to connect
the top and bottom ground planes. The evaluation circuit
board shown is available from Hittite upon request.
Item
J1, J2
U1
Description
PC Mount SMA Connector
HMC315 Amplifier
PCB*
Evaluation PCB 1.5” x 1.5”
*Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 85
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