HMC342LC4TR [HITTITE]
Wide Band Low Power Amplifier, 1 Func, GAAS,;
| 型号： | HMC342LC4TR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Wide Band Low Power Amplifier, 1 Func, GAAS, 放大器 射频 微波 |
| 文件： | 总6页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
Typical Applications
The HMC342LC4 is ideal for:
• Point-to-Point Radios
Features
Noise Figure: 3.5 dB
Gain: 22 dB
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
Single Positive Supply: +3V @ 43 mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Functional Diagram
General Description
The HMC342LC4 is a GaAs PHEMT MMIC Low
Noise Amplifier housed in a leadless 4x4 mm RoHS
compliant SMT package. Operating from 13 to 25
GHz, the amplifier provides 22 dB of gain and +19
dBm of output IP3 from a single +3V supply. The
low noise figure performance of 3.5 dB is ideal for
receive and transmit pre-driver applications. The RF
I/Os are DC blocked and matched to 50 Ohms for
ease of use. The HMC342LC4 allows the use of
surface mount manufacturing techniques and requires
no external matching components.
Electrical Specifications, TA = +25° C, Vdd = +3V, Idd = 43 mA
Parameter
Min.
Typ.
13 - 18
22
Max.
Min.
Typ.
18 - 22
20
Max.
Min.
16
Typ.
22 - 25
19
Max.
Units
GHz
dB
Frequency Range
Gain
19
17
Gain Variation Over Temperature
Noise Figure
0.025
3.5
15
0.035
4.0
0.025
3.5
15
0.035
4.0
0.025
3.5
0.035
4.5
dB/ °C
dB
Input Return Loss
10
dB
Output Return Loss
15
20
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (Vdd = +3V)
7
8
9
dBm
dBm
dBm
mA
9
11
11.5
20
16
19
43
43
43
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 32
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
28
25
22
S21
S11
S22
0
19
-5
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
16
13
10
12
14
16
18
20
22
24
26
26
26
8
10 12 14 16 18 20 22 24 26 28 30
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-40 C
-5
-10
-15
-20
-25
-30
-5
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
12
14
16
18
20
22
24
26
12
14
16
18
20
22
24
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Output IP3 vs. Temperature
10
24
22
20
18
16
14
12
10
+25 C
+85 C
-40 C
8
6
4
2
0
+25 C
+85 C
-40 C
12
14
16
18
20
22
24
26
12
14
16
18
20
22
24
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 33
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
P1dB vs. Temperature
Psat vs. Temperature
14
14
12
10
8
12
10
8
6
6
4
2
0
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
4
2
0
12
14
16
18
20
22
24
26
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 20 GHz
Reverse Isolation vs. Temperature
24
0
19
-10
Pout
+25 C
14
-20
Gain
+85 C
PAE
-40 C
9
-30
4
-40
-50
-60
-1
-6
-26 -24 -22 -20 -18 -16 -14 -12 -10 -8
-6
-4
12
14
16
18
20
22
24
26
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain, Power & Noise Figure
vs. Supply Voltage @ 20 GHz
24
20
16
12
8
Gain
P1dB
Psat
Noise Figure
4
0
2.7
3
3.3
Vdd Supply Voltage (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 34
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
Vdd (Vdc)
Idd (mA)
RF Input Power (RFIN)(Vdd = +3.0 Vdc) 0 dBm
+2.7
42
43
44
Channel Temperature
175 °C
+3.0
Continuous Pdiss (T= 85 °C)
(derate 3.62 mW/°C above 85 °C)
+3.3
0.326 W
Note: Amplifier will operate over full voltage ranges shown above.
Thermal Resistance
(channel to ground paddle)
276 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 35
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 5 - 14,
No connection required. These pins may be connected to
RF/DC ground without affecting performance.
N/C
18 - 20, 22 - 24
Package base has an exposed metal ground that must
also be connected to RF/DC ground.
2, 4, 15, 17
GND
This pin is AC coupled
and matched to 50 Ohms.
3
RFIN
This pin is AC coupled
and matched to 50 Ohms.
16
RFOUT
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1000pF, and 2.2 μF are required.
21
Vdd
Application Circuit
Component Value
C1
C2
C3
100 pF
1,000 pF
2.2 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 36
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
Evaluation PCB
List of Materials for Evaluation PCB 110209 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
Item
Description
2.92 mm PC mount K-connector
DC Pin
J1, J2
J3, J4
C1
100 pF capacitor, 0402 pkg.
1,000 pF Capacitor, 0603 pkg.
2.2μF Capacitor, Tantalum
HMC342LC4 Amplifier
108535 Evaluation PCB
C2
C3
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 37
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