HMC346MS8GETR [HITTITE]

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HMC346MS8GETR
型号: HMC346MS8GETR
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
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射频和微波 射频衰减器 微波衰减器
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HMC346MS8G  
v03.0304  
MICROWAVE CORPORATION  
GaAs MMIC SMT VOLTAGE-VARIABLE  
ATTENUATOR, DC - 8 GHz  
Typical Applications  
Features  
This attenuator is ideal for use as a VVA  
for DC - 8 GHz applications:  
Wide Bandwidth: DC - 8 GHz  
Low Phase Shift vs. Attenuation  
32 dB Attenuation Range  
• Point-to-Point Radio  
• VSAT Radio  
9
General Description  
Functional Diagram  
The HMC346MS8G is an absorptive Voltage Vari-  
able Attenuator (VVA) in an 8 lead surface-mount  
package operating from DC - 8 GHz. It features  
an on-chip reference attenuator for use with an  
external op-amp to provide simple single voltage  
attenuation control, 0 to -3V.The device is ideal in  
designs where an analog DC control signal must  
control RF signal levels over a 30 dB amplitude  
range. Applications include AGC circuits and tem-  
perature compensation of multiple gain stages in  
microwave point-to-point and VSAT radios.  
Electrical Specifications,TA = +25° C, 50 ohm system  
Parameter  
Min  
Typical  
1.5  
Max  
2.5  
Units  
dB  
Insertion Loss  
DC - 8 GHz  
DC - 8 GHz  
DC - 8 GHz  
Attenuation Range  
Return Loss  
27  
5
32  
dB  
10  
dB  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
2
8
ns  
ns  
Input Power for 0.25 dB Compression (0.5 - 8 GHz)  
Min. Atten.  
Atten. >2 dB  
+8  
-2  
dBm  
dBm  
Input Third Order Intercept (0.5 - 8 GHz)  
(Two-tone Input Power = -8 dBm Each Tone)  
Min. Atten.  
Atten. >2 dB  
+25  
+10  
dBm  
dBm  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
9 - 74  
HMC346MS8G  
v03.0304  
MICROWAVE CORPORATION  
GaAs MMIC SMT VOLTAGE-VARIABLE  
ATTENUATOR, DC - 8 GHz  
InseGrtiaoAn sLoMssMvIsC.TeSmUpBer-aHtuAreRMONICALLY RPeUlaMtivPeEADtteMnuIXatEioRn 17 - 25 GHz  
0
-1  
-2  
-3  
-4  
0
-5  
9
-10  
-15  
-20  
-25  
T+25C  
T -40C  
T+85C  
-30  
-35  
-40  
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Relative Attenuation vs.  
Control Voltage @ 4 GHz  
Return Loss vs. Attenuation  
0
0
-0.5  
-1  
-5  
V2 -40C  
-10  
-15  
-20  
-25  
-30  
V2 +25C  
V2 +85C  
-1.5  
-2  
MIN  
15 dB  
MAX  
-2.5  
V1 +85C  
15  
V1 +25C  
20  
V1 -40C  
25  
-3  
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
30  
RELATIVE ATTENUATION (dB)  
FREQUENCY (GHz)  
Relative Attenuation vs.  
Control Voltage @ 8 GHz  
Relative Phase  
0
-0.5  
-1  
140  
130  
120  
110  
100  
90  
max  
25 dB  
30 dB  
20 dB  
15 dB  
V2 -40C  
10 dB  
V2 +25C  
80  
V2 +85C  
-1.5  
5 dB  
70  
60  
50  
40  
30  
20  
10  
0
-2  
-2.5  
V1 +85C  
15  
V1 +25C  
20  
V1 -40C  
25  
-3  
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
30  
RELATIVE ATTENUATION (dB)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
9 - 75  
HMC346MS8G  
v03.0304  
MICROWAVE CORPORATION  
GaAs MMIC SMT VOLTAGE-VARIABLE  
ATTENUATOR, DC - 8 GHz  
Input Third Order  
Input Second Order  
Intercept vs Attenuation*  
Intercept vs. Attenuation*  
30  
70  
0 dB  
0 dB  
60  
25  
9
50  
20  
15  
3 dB  
10 dB  
40  
10 dB  
30  
6 dB  
10  
5
20  
6 dB  
3 dB  
10  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)  
FREQUENCY (GHz)  
1 dB Compression vs. Attenuation  
0.25 dB Compression vs. Attenuation  
20  
20  
0 dB (REF)  
5 dB  
15  
15  
10  
5
10  
5
0 dB (REF)  
5 dB  
0
0
-5  
-5  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Second Harmonic vs. Attenuation  
80  
0 dB  
70  
60  
10 dB  
50  
6 dB  
40  
30  
20  
3 dB  
3
0
1
2
4
5
6
7
8
FREQUENCY (GHz)  
*Two-tone input power = -8 dBm each tone, 1 MHz spacing.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
9 - 76  
HMC346MS8G  
v03.0304  
MICROWAVE CORPORATION  
GaAs MMIC SMT VOLTAGE-VARIABLE  
ATTENUATOR, DC - 8 GHz  
Absolute Maximum Ratings  
RF Input Power  
+18 dBm  
Control Voltage Range  
Storage Temperature  
Operating Temperature  
+1.0 to -5.0 Vdc  
-65 to +150 °C  
-40 to +85 °C  
9
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED  
PLASTIC SILICA AND SILICON IMPREGNATED.  
2. LEADFRAME MATERIAL: COPPER ALLOY  
3. LEADFRAME PLATING: Sn/Pb SOLDER  
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].  
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED  
TO PCB RF GROUND.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
9 - 77  
HMC346MS8G  
v03.0304  
MICROWAVE CORPORATION  
GaAs MMIC SMT VOLTAGE-VARIABLE  
ATTENUATOR, DC - 8 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
RF1  
RF2  
This pin is DC coupled and matched to 50 Ohm. Blocking  
capacitors are required if RF line potential is not equal to 0V.  
1, 8  
9
2, 7  
GND  
This pin must be DC grounded.  
3, 6  
V2, V1  
Control Input (Master).  
4
5
I
Control Input (Slave).  
Not Connected.  
N/C  
Single-Line Control Driver  
External op-amp control circuit maintains impedance match while attenuation is varied. Input control ranges from 0 Volts (min.  
attenuation) to -2.5 Volts (max. attenuation.)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
9 - 78  
HMC346MS8G  
v03.0304  
MICROWAVE CORPORATION  
GaAs MMIC SMT VOLTAGE-VARIABLE  
ATTENUATOR, DC - 8 GHz  
Evaluation PCB  
9
The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal  
lines at the RF ports should be 50 ohm impedance and the package ground leads and package bottom should be con-  
nected directly to the PCB RF ground plane, similar to that shown above. The evaluation circuit board shown above is  
available from Hittite Microwave Corporation upon request.  
List of Material  
Item  
Description  
J1 - J2  
J3 - J7  
U1  
PC Mount SMA RF Connector  
DC PIN  
HMC346MS8G  
104089 Eval Board  
PCB*  
*Circuit Board Material: Rogers 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
9 - 79  

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