HMC406MS8GE [HITTITE]
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz; 砷化镓的InGaP HBT MMIC功率放大器， 5 - 6 GHz的
| 型号： | HMC406MS8GE |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz |
| 文件： | 总6页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC406MS8G / 406MS8GE
v05.1209
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Typical Applications
Features
Gain: 17 dB
The HMC406MS8G(E) is ideal for:
• WiMAX & WiLAN
• DSRC
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
• Military & Maritime
• Private Mobile Radio
• UNII & ISM
11
Functional Diagram
General Description
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplifier which operates between 5 and 6
GHz. The amplifier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplifier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
Max.
Min.
14
Typ.
Max.
Units
GHz
dB
Frequency Range
Gain
5 - 6
5.7 - 5.9
13
16
21
17
21
Gain Variation Over Temperature
Input Return Loss
0.03
0.04
0.03
0.04
dB/ °C
dB
10
11
Output Return Loss
8
9
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
21
34
24
24
34
27
dBm
dBm
dBm
dB
27
29
38
38
6.0
6.0
Supply Current (Icq)
Vpd = 0V/5V
Vpd = 5V
0.002 / 300
0.002 / 300
mA
Control Current (Ipd)
7
7
mA
Switching Speed
tON, tOFF
35
35
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 14
HMC406MS8G / 406MS8GE
v05.1209
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
22
20
18
16
14
12
0
10
-5
+25 C
+85 C
-40 C
8
6
4
2
0
-10
-15
-20
-25
11
S21
S11
S22
4.5
5
5.5
FREQUENCY (GHz)
6
6.5
3
4
5
6
7
8
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-40 C
-5
-10
-15
-5
-10
-15
+25 C
+85 C
-40 C
-20
-25
-30
4.5
5
5.5
6
6.5
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
34
34
30
26
22
18
14
30
26
22
18
14
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
4.5
5
5.5
FREQUENCY (GHz)
6
6.5
4.5
5
5.5
FREQUENCY (GHz)
6
6.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 15
HMC406MS8G / 406MS8GE
v05.1209
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Power Compression @ 5.8 GHz
Output IP3 vs. Temperature
44
42
36
30
24
18
12
6
39
34
+25 C
+85 C
-40 C
29
24
19
14
11
Pout (dBm)
Gain (dB)
PAE (%)
4.5
5
5.5
FREQUENCY (GHz)
6
6.5
0
0
2
4
6
8
10
12
14
16
1
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage
10
32
31
30
29
28
27
26
25
24
23
22
24
23
22
21
20
19
18
17
16
9
8
7
6
5
4
3
2
1
0
+25 C
+85 C
-40 C
P1dB
Psat
15
14
Gain
4.5
5
5.5
FREQUENCY (GHz)
6
6.5
4.75
5
5.25
Vcc SUPPLY VOLTAGE (V)
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
Reverse Isolation vs. Temperature
0
350
315
280
245
210
175
140
105
70
33
30
27
24
Reverse Isolation
-10
Power Down Isolation
-20
21
18
15
12
9
Icq
-30
-40
-50
-60
Gain
P1dB
Psat
35
6
0
3
4.5
5
5.5
6
6.5
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
Vpd (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 16
HMC406MS8G / 406MS8GE
v05.1209
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Control Voltage (Vpd)
+5.5V
RF Input Power (RFIN)(Vs = Vpd = +5V)
Junction Temperature
+20 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 32 mW/°C above 85 °C)
2.1 W
Thermal Resistance
(junction to ground paddle)
11
31 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85° C
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H406
XXXX
HMC406MS8G
Low Stress Injection Molded Plastic
Sn/Pb Solder
H406
XXXX
MSL1 [2]
HMC406MS8GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 17
HMC406MS8G / 406MS8GE
v05.1209
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Power Control Pin. For maximum power, this pin should be
connected to 5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
1
Vpd
11
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
2, 4, 7
3
GND
RFIN
This pin is AC coupled
and matched to 50 Ohms.
RF output and bias for the output stage. The power supply
for the output device needs to be supplied to these pins.
5, 6
RFOUT
Power supply voltage for the first amplifier stage. An
external bypass capacitor of 330 pF is required. This
capacitor should be placed as close to the devices as
possible.
8
Vcc
Application Circuit
TL1
TL2
50 Ohm 50 Ohm
0.231” 0.1”
TL3
Note 1: C3 should be located < 0.020” from Pin 8 (Vcc)
Note 2: C2 should be located < 0.020” from L1.
Impedance
Length
50 Ohm
0.038”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 18
HMC406MS8G / 406MS8GE
v05.1209
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Evaluation PCB
11
List of Materials for Evaluation PCB 104989 [1]
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA RF Connector
2mm DC Header
C1 - C3
C4
330 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
0.6 pF Capacitor, 0603 Pkg.
1.6 pF Capacitor, 0603 Pkg.
100 pF Capacitor, 0603 Pkg.
3.9 nH Inductor, 0603 Pkg.
HMC406MS8G(E) Amplifier
105021 Eval Board
C5
C6
C7
L1
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 19
相关型号：
HMC407MS8GETR
Wide Band Medium Power Amplifier, 5000MHz Min, 7000MHz Max, ROHS COMPLIANT, PLASTIC, SMT, 8 PIN
HITTITE
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